KR900001593A - Method for Producing Silicon Carbide-Coated Graphite by Controlling SiO Generation Rate - Google Patents

Method for Producing Silicon Carbide-Coated Graphite by Controlling SiO Generation Rate Download PDF

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Publication number
KR900001593A
KR900001593A KR1019880009033A KR880009033A KR900001593A KR 900001593 A KR900001593 A KR 900001593A KR 1019880009033 A KR1019880009033 A KR 1019880009033A KR 880009033 A KR880009033 A KR 880009033A KR 900001593 A KR900001593 A KR 900001593A
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South Korea
Prior art keywords
silicon carbide
coated graphite
graphite
silicon
generation rate
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KR1019880009033A
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Korean (ko)
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KR910000293B1 (en
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이준근
김창삼
최헌진
박성훈
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전학제
한국과학기술원
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Priority to KR1019880009033A priority Critical patent/KR910000293B1/en
Publication of KR900001593A publication Critical patent/KR900001593A/en
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/20—Graphite
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

내용 없음.No content.

Description

SiO 발생 속도 조절에 의한 탄화규소 피복 흑연의 제조 방법Method for Producing Silicon Carbide-Coated Graphite by Controlling SiO Generation Rate

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 반응식(1)에서 아르곤 가스의 유속이 0.5ℓ/분일 때 온도와 반응물의 입도에 따른 반응률의 변화를 보인 그라프이다.1 is a graph showing the change in the reaction rate according to the temperature and particle size of the reactants when the flow rate of argon gas is 0.5 l / min in the reaction formula (1).

제2도는 반응식(2)에서 아르곤 가스의 유속이 0.5ℓ/분일 때 온도와 반응물의 입도에 따른 반응률의 변화를 보인 그라프이다.2 is a graph showing the change of the reaction rate according to the temperature and particle size of the reactants when the flow rate of argon gas is 0.5 l / min in the reaction formula (2).

제4도는 탄화규소 피복 흑연의 제조를 위'한 유도로의 개략도이다.4 is a schematic diagram of an induction furnace for the production of silicon carbide coated graphite.

Claims (4)

탄화규소와 이산화규소의 혼합 분말에 흑연을 묻고 비산화성 분위기에서 1800-2100℃의 고온으로 반응시키는 것이 특징인 탄화규소 피복 흑연의 제조 방법.A method for producing silicon carbide-coated graphite, characterized by immersing graphite in a mixed powder of silicon carbide and silicon dioxide and reacting at a high temperature of 1800-2100 ° C. in a non-oxidizing atmosphere. 질화규소와 이산화규소의 혼합 분말에 흑연을 묻고 비산화성 분위기에서 1800-2100℃의 고온으로 반응시키는 것이 특징인 탄화규소 피복 흑연의 제조 방법.A method for producing silicon carbide-coated graphite, characterized by immersing graphite in a mixed powder of silicon nitride and silicon dioxide and reacting at a high temperature of 1800-2100 ° C. in a non-oxidizing atmosphere. 흑연을 유도로의 중심에 위치시키고, 그 주위에 탄화규소와 이산화규소 또는 질화규소와 이산화규소의 혼합 분말을 채우고 비산화성 분위기에서 1800-2100℃의 고온으로 반응시키는 것이 특징인 탄화규소 피복 흑연의 제조 방법.Preparation of silicon carbide-coated graphite characterized by placing the graphite at the center of the induction furnace, filling it with silicon carbide and silicon dioxide or a mixed powder of silicon nitride and silicon dioxide and reacting at a high temperature of 1800-2100 ° C. in a non-oxidizing atmosphere. Way. 단열 펠트로 감싼 흑연을 유도로의 중심에 위치시키고 그 주위에 탄화규소와 이산화규소 또는 질화규소와 이산화규소의 혼합 분말을 채우고 비산화성 분위기에서 1800-2100℃의 고온으로 반응시키는 것이 특징인 탄화규소 피복 흑연의 제조 방법.Silicon carbide-coated graphite characterized by placing graphite wrapped with adiabatic felt in the center of the induction furnace, filling silicon carbide with silicon dioxide or mixed powder of silicon nitride and silicon dioxide, and reacting at a high temperature of 1800-2100 ° C. in a non-oxidizing atmosphere. Method of preparation. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880009033A 1988-07-20 1988-07-20 Process for production of graphite coated silicon carbide KR910000293B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880009033A KR910000293B1 (en) 1988-07-20 1988-07-20 Process for production of graphite coated silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880009033A KR910000293B1 (en) 1988-07-20 1988-07-20 Process for production of graphite coated silicon carbide

Publications (2)

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KR900001593A true KR900001593A (en) 1990-02-27
KR910000293B1 KR910000293B1 (en) 1991-01-24

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100310860A1 (en) * 2008-02-28 2010-12-09 Changwon National University Industry Academy Cooperation Corps Synthetic method for anti-oxidation ceramic coatings on graphite substrates

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KR910000293B1 (en) 1991-01-24

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