JPS6424100A - Production of sic wiskers - Google Patents

Production of sic wiskers

Info

Publication number
JPS6424100A
JPS6424100A JP17845287A JP17845287A JPS6424100A JP S6424100 A JPS6424100 A JP S6424100A JP 17845287 A JP17845287 A JP 17845287A JP 17845287 A JP17845287 A JP 17845287A JP S6424100 A JPS6424100 A JP S6424100A
Authority
JP
Japan
Prior art keywords
source
gas
wiskers
sic
oxidative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17845287A
Other languages
Japanese (ja)
Other versions
JP2603953B2 (en
Inventor
Hajime Saito
Hideo Nagashima
Masataka Suzuki
Takehisa Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
S T K CERAMICS KENKYUSHO KK
Coorstek KK
STK Ceramics Laboratory Corp
Original Assignee
S T K CERAMICS KENKYUSHO KK
STK Ceramics Laboratory Corp
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by S T K CERAMICS KENKYUSHO KK, STK Ceramics Laboratory Corp, Toshiba Ceramics Co Ltd filed Critical S T K CERAMICS KENKYUSHO KK
Priority to JP17845287A priority Critical patent/JP2603953B2/en
Publication of JPS6424100A publication Critical patent/JPS6424100A/en
Application granted granted Critical
Publication of JP2603953B2 publication Critical patent/JP2603953B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prevent by-production of glass and to reduce production cost of SiC wiskers by using non-oxidative gas mixed with specified hydrocarbon when a mixture of SiO2 source, C source and NaF source is heated in the non- oxidative atmosphere. CONSTITUTION:A raw material powder 24 mixed SiO2 source, C source and NaF source is packed in a crucible body 21, the non-oxidative gas (N2, Ar, etc.) is introduced to the crucible 20 through an introducing tube 23 and the raw material 24 is heated at a fixed temp. to produce SiC wiskers. At that time, the hydrocarbon gas is mixed with the non-oxidative gas introduced to the crucible 20 in a molar ratio 1/10-2/1 to the non-oxidative gas and, as the hydrocarbon gas, CH4, C2H6, C2H8, C4H10, etc., are used. According to the method, SiO gas generated from SiO2 is converted to SiC wiskers with the added hydrocarbon gas and by-production of glass is prevented.
JP17845287A 1987-07-17 1987-07-17 Manufacturing method of SiC whisker Expired - Lifetime JP2603953B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17845287A JP2603953B2 (en) 1987-07-17 1987-07-17 Manufacturing method of SiC whisker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17845287A JP2603953B2 (en) 1987-07-17 1987-07-17 Manufacturing method of SiC whisker

Publications (2)

Publication Number Publication Date
JPS6424100A true JPS6424100A (en) 1989-01-26
JP2603953B2 JP2603953B2 (en) 1997-04-23

Family

ID=16048763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17845287A Expired - Lifetime JP2603953B2 (en) 1987-07-17 1987-07-17 Manufacturing method of SiC whisker

Country Status (1)

Country Link
JP (1) JP2603953B2 (en)

Also Published As

Publication number Publication date
JP2603953B2 (en) 1997-04-23

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