JPS5742524A - Preparation of silicon tetrachloride - Google Patents
Preparation of silicon tetrachlorideInfo
- Publication number
- JPS5742524A JPS5742524A JP11775080A JP11775080A JPS5742524A JP S5742524 A JPS5742524 A JP S5742524A JP 11775080 A JP11775080 A JP 11775080A JP 11775080 A JP11775080 A JP 11775080A JP S5742524 A JPS5742524 A JP S5742524A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- mixture
- sio
- containing material
- sicl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
PURPOSE: To prepare a high purity SiCl4 in high efficiency, under relatively low temperature, by keeping a moving bed composed of specific three zones at a high temperature and feeding a mixture of an SiO2-containing material and carbon from the top and chlorine gas from the bottom of the bed, thereby reacting the SiO2 with chlorine.
CONSTITUTION: A moving bed composed of a top zone consisting of a mixture of an SiO2-containing material (e.g. quartzite) and carbon (e.g. active carbon), an intermediate zone consisting of a mixture of an SiO2-containing material, a boron compound (e.g. B2O3) and carbon, and the bottom zone consisting of carbon or a mixture of a boron compound and carbon, is kept at 300W1,200°C, pref. 400W 1,000°C. A mixture of an SiO2-containing material and carbon is fed to the moving bed from the top, and reacted with chlorine gas fed from the bottom. The reaction residue is discharged from the bottom of the reactor, and produced SiCl4 is recovered from the gas mixture discharged from the top of the reactor. A highly pure SiCl4 can be prepared by this process in high efficiency and yield, at a relatively low temperature.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11775080A JPS5934129B2 (en) | 1980-08-28 | 1980-08-28 | Method for producing silicon tetrachloride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11775080A JPS5934129B2 (en) | 1980-08-28 | 1980-08-28 | Method for producing silicon tetrachloride |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5742524A true JPS5742524A (en) | 1982-03-10 |
JPS5934129B2 JPS5934129B2 (en) | 1984-08-20 |
Family
ID=14719384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11775080A Expired JPS5934129B2 (en) | 1980-08-28 | 1980-08-28 | Method for producing silicon tetrachloride |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5934129B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0077138A2 (en) * | 1981-09-29 | 1983-04-20 | Ube Industries, Ltd. | Production process of silion tetrachloride |
JP2014193810A (en) * | 2007-12-05 | 2014-10-09 | Institut National De La Recherche Scientifique | Process for recovering gecl4 and/or sicl4 from an optical fiber or glassy residue and process for manufacturing sicl4 from an sio2-rich material |
-
1980
- 1980-08-28 JP JP11775080A patent/JPS5934129B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0077138A2 (en) * | 1981-09-29 | 1983-04-20 | Ube Industries, Ltd. | Production process of silion tetrachloride |
US4490344A (en) * | 1981-09-29 | 1984-12-25 | Ube Industries, Ltd. | Production process of silicon tetrachloride |
JP2014193810A (en) * | 2007-12-05 | 2014-10-09 | Institut National De La Recherche Scientifique | Process for recovering gecl4 and/or sicl4 from an optical fiber or glassy residue and process for manufacturing sicl4 from an sio2-rich material |
Also Published As
Publication number | Publication date |
---|---|
JPS5934129B2 (en) | 1984-08-20 |
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