JPS5734009A - Preparation of silicon carbide - Google Patents

Preparation of silicon carbide

Info

Publication number
JPS5734009A
JPS5734009A JP10675880A JP10675880A JPS5734009A JP S5734009 A JPS5734009 A JP S5734009A JP 10675880 A JP10675880 A JP 10675880A JP 10675880 A JP10675880 A JP 10675880A JP S5734009 A JPS5734009 A JP S5734009A
Authority
JP
Japan
Prior art keywords
reaction
atmosphere
reaction time
temperature
reacted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10675880A
Other languages
Japanese (ja)
Other versions
JPS6251888B2 (en
Inventor
Kimihiko Sato
Kunihiko Terase
Hitoshi Kijimuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP10675880A priority Critical patent/JPS5734009A/en
Publication of JPS5734009A publication Critical patent/JPS5734009A/en
Publication of JPS6251888B2 publication Critical patent/JPS6251888B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Carbon And Carbon Compounds (AREA)

Abstract

PURPOSE: To obtain powdered SiC suitable to a raw material for preparing a sintered material in high purity and yield on an industrial scale, by reacting an inorganic silicon compound containing a halogen with NH3, and then reacting the resultant reaction product with a carbonaceous substance in a nonoxidizing atmosphere.
CONSTITUTION: An inorganic silicon compound containing a halogen, e.g. SiCl4, is reacted with NH3 at a molar ratio between the compound and NH3 of 0.1W5 at 400W1,600°C for a reaction time of 30W0.1sec. If the amount of the NH3 is lower than the lower limit, the rate of the reaction is low. If the amount is higher than the upper limit, the reaction operation is difficult due to the deposition of NH4Cl. If the reaction temperature is lower than the lower limit, NH4Cl is deposited. If the temperature is higher than the upper limit, too much energy is required, and a reactor material is limited to a material usable in an atmosphere containing a chloride at a high temperature. If the reaction time exceeds 30sec, the reactor is enlarged to an unnecessary size. If the reaction time is shorter than 0.1sec, the reaction will not proceed substantially. The resultant powdery reaction product is take out in an atmosphere of N2, etc. and reacted with a carbonaceous substance in the same atmosphere at about 1,400W1,800°C.
COPYRIGHT: (C)1982,JPO&Japio
JP10675880A 1980-08-05 1980-08-05 Preparation of silicon carbide Granted JPS5734009A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10675880A JPS5734009A (en) 1980-08-05 1980-08-05 Preparation of silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10675880A JPS5734009A (en) 1980-08-05 1980-08-05 Preparation of silicon carbide

Publications (2)

Publication Number Publication Date
JPS5734009A true JPS5734009A (en) 1982-02-24
JPS6251888B2 JPS6251888B2 (en) 1987-11-02

Family

ID=14441805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10675880A Granted JPS5734009A (en) 1980-08-05 1980-08-05 Preparation of silicon carbide

Country Status (1)

Country Link
JP (1) JPS5734009A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139664A (en) * 1989-11-27 1992-08-18 Baker Hughes Incorporated Plate and cell holder

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0284490U (en) * 1988-12-19 1990-06-29

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139664A (en) * 1989-11-27 1992-08-18 Baker Hughes Incorporated Plate and cell holder

Also Published As

Publication number Publication date
JPS6251888B2 (en) 1987-11-02

Similar Documents

Publication Publication Date Title
US4122155A (en) Preparation of silicon nitride powder
Stetson et al. The synthesis and structure of two filled skutterudite compounds: BaFe4Sb12 and BaRu4Sb12
JPS56149308A (en) Manufacture of metallic carbonitride
JPS57140316A (en) Manufacture of coarse granular aluminum hydroxide
GB1213779A (en) Production of organo-silicon compounds
JPS57156318A (en) Production of trichlorosilane
JPS5734009A (en) Preparation of silicon carbide
JPS5684310A (en) Manufacture of betaatype silicon carbide
ES2004407A6 (en) A method for the production of beta'-sialon based ceramic powders.
Jha Phase equilibria in the Si-CNO system and the kinetic analysis of silicon carbide whisker growth
JPS53133600A (en) Production of silicon nitride
JPH01119505A (en) Production of powdery silicon nitride
ES322311A1 (en) Contact mass for preparing halogenosilanes and process therefor
JPS54124898A (en) Preparation of silicon nitride
US2466413A (en) Method of preparation of hydrocarbon-substituted halosilanes
JPS6461307A (en) Production of beta-type silicon carbide fine powder
JP2664048B2 (en) Synthesis method of disilicon hexafluoride
JPS57118017A (en) Manufacture of trichlorosilane
US3109014A (en) Method for preparing monomethyldichlorosilane
Yoder et al. Silicon imidazolidines
JPS5782108A (en) Preparation of nitride ceramic powder
Hausner Pressureless sintering of non-oxide ceramics
JPS5742524A (en) Preparation of silicon tetrachloride
JPS55140711A (en) Manufacture of silicon carbide powder
KR950005950B1 (en) Process for nitriding aluminium powder