JPS5782108A - Preparation of nitride ceramic powder - Google Patents

Preparation of nitride ceramic powder

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Publication number
JPS5782108A
JPS5782108A JP15562680A JP15562680A JPS5782108A JP S5782108 A JPS5782108 A JP S5782108A JP 15562680 A JP15562680 A JP 15562680A JP 15562680 A JP15562680 A JP 15562680A JP S5782108 A JPS5782108 A JP S5782108A
Authority
JP
Japan
Prior art keywords
powder
temperature zone
low temperature
vapor
titled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15562680A
Other languages
Japanese (ja)
Inventor
Eiji Kamijo
Matsuo Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15562680A priority Critical patent/JPS5782108A/en
Publication of JPS5782108A publication Critical patent/JPS5782108A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To prepare the titled high-purity powder giving a sintered product with high strength, by forming a high temperature zone and a low temperature zone in a vapor-phase reactor for the synthesis of the titled powder, and transferring and depositing the titled powder synthesized in the high temperature zone to the low temperature zone.
CONSTITUTION: A (non-)metallic chloride 2 (e.g. silicon tetrachloride) as a raw material of the ceramic, and ammonia gas 3 are fed to a synthesizing reactor 1 having a high temperature zone H kept at a temperature necessary for the vapor-phase reaction, i.e. ≥800°C and a low temperature zone L kept above the decomposition temperature of by-produced ammonium chloride, i.e. about 330W 600°C. The nitride ceramic powder is synthesized by the vapor-phase reaction in the high temperature zone H, and the powder is transferred to and deposited in the powder container 6 placed in the low temperature zone L. The objective high-purity nitride ceramic powder free from ammonium chloride can be obtained by taking out the deposited powder 9 from the container 6.
COPYRIGHT: (C)1982,JPO&Japio
JP15562680A 1980-11-04 1980-11-04 Preparation of nitride ceramic powder Pending JPS5782108A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15562680A JPS5782108A (en) 1980-11-04 1980-11-04 Preparation of nitride ceramic powder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15562680A JPS5782108A (en) 1980-11-04 1980-11-04 Preparation of nitride ceramic powder

Publications (1)

Publication Number Publication Date
JPS5782108A true JPS5782108A (en) 1982-05-22

Family

ID=15610106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15562680A Pending JPS5782108A (en) 1980-11-04 1980-11-04 Preparation of nitride ceramic powder

Country Status (1)

Country Link
JP (1) JPS5782108A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017511295A (en) * 2014-04-14 2017-04-20 オーシーアイ カンパニー リミテッドＯＣＩ Ｃｏｍｐａｎｙ Ｌｔｄ． Continuous silicon nitride production apparatus and method with improved uniformity of particle size

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017511295A (en) * 2014-04-14 2017-04-20 オーシーアイ カンパニー リミテッドＯＣＩ Ｃｏｍｐａｎｙ Ｌｔｄ． Continuous silicon nitride production apparatus and method with improved uniformity of particle size

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