JPS57140308A - Manufacture of granular silicon - Google Patents

Manufacture of granular silicon

Info

Publication number
JPS57140308A
JPS57140308A JP2336981A JP2336981A JPS57140308A JP S57140308 A JPS57140308 A JP S57140308A JP 2336981 A JP2336981 A JP 2336981A JP 2336981 A JP2336981 A JP 2336981A JP S57140308 A JPS57140308 A JP S57140308A
Authority
JP
Japan
Prior art keywords
gaseous
sicl
manufacture
high purity
fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2336981A
Other languages
Japanese (ja)
Inventor
Jinichiro Hasegawa
Kiyoshi Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP2336981A priority Critical patent/JPS57140308A/en
Publication of JPS57140308A publication Critical patent/JPS57140308A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To manufacture fine silicon granules suitable for use as depositing nuclei used in the manufacture of high purity silicon granules in a fluidized bed reactor, by bringing a gaseous reaction product obtd. by the contact of hot high purity silicon with a gaseous chlorosilane into contact with a gaseous chlorosilane.
CONSTITUTION: A gaseous chlorosilane such as SiCl4 is introduced into a vertical type reactor 1 from an upper inlet and converted into SiCl2 by the contact with a high purity silicon rod 3 heated to 1,100W1,350°C. The formed SiCl2 is chemically unstable, and it is immediately decomposed into fine Si particles and SiCl4. The gaseous mixture is then reacted with a gaseous chlorosilane such as HSiCl3 fed from inlets 4 at about 1,000°C to grow Si on said fine Si particles, and the resulting granular silicon having the desired grain size is taken out of an outlet 7. By-produced HCl and the unreacted gas are discharged from a lower pipe 6.
COPYRIGHT: (C)1982,JPO&Japio
JP2336981A 1981-02-19 1981-02-19 Manufacture of granular silicon Pending JPS57140308A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2336981A JPS57140308A (en) 1981-02-19 1981-02-19 Manufacture of granular silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2336981A JPS57140308A (en) 1981-02-19 1981-02-19 Manufacture of granular silicon

Publications (1)

Publication Number Publication Date
JPS57140308A true JPS57140308A (en) 1982-08-30

Family

ID=12108630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2336981A Pending JPS57140308A (en) 1981-02-19 1981-02-19 Manufacture of granular silicon

Country Status (1)

Country Link
JP (1) JPS57140308A (en)

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