JPS62143813A - Production of silicon tetrachloride - Google Patents

Production of silicon tetrachloride

Info

Publication number
JPS62143813A
JPS62143813A JP28212085A JP28212085A JPS62143813A JP S62143813 A JPS62143813 A JP S62143813A JP 28212085 A JP28212085 A JP 28212085A JP 28212085 A JP28212085 A JP 28212085A JP S62143813 A JPS62143813 A JP S62143813A
Authority
JP
Japan
Prior art keywords
reactor
reaction
mixture
carbon
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28212085A
Other languages
Japanese (ja)
Other versions
JPH0643244B2 (en
Inventor
Hiroshi Unno
洋 海野
Katsumasa Yamaguchi
克誠 山口
Senji Takenaka
竹中 戦児
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JGC Corp
Original Assignee
JGC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JGC Corp filed Critical JGC Corp
Priority to JP28212085A priority Critical patent/JPH0643244B2/en
Publication of JPS62143813A publication Critical patent/JPS62143813A/en
Publication of JPH0643244B2 publication Critical patent/JPH0643244B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To simplify the structure of a reactor, facilitate the selection of a material and increase the conversion, by feeding excess Cl2 and H2 and utilizing heat of reaction forming HCl in bringing chlorine into contact with a mixture of an SiO2-containing material with carbon to produce SiCl4. CONSTITUTION:A mixture of an SiO2-containing material with carbon is fed from a storage tank 1 to a reactor 3 to form a raw material layer 9. H2 is fed from an H2 feeding pipe 5 and Cl2 is fed from a Cl2 feeding pipe 6 to ignite a burner 7. Reaction for forming HCl is initiated to introduce HCl and the residual Cl2 heated to a high temperature by this reaction into the lower part of the reactor 3 and the Cl2 is reacted with the mixture of the SiO2- containing material with carbon to form SiCl4. The reaction product gas is then cooled in a cooler 10 to separate the resultant liquefied SiCl4 in a separator 11. The residual gas is absorbed in water in an HCl absorption column 12. According to this method, the structure of the reactor 3 is simplified and the selection of the material and temperature control are facilitated. Since a high temperature of >=1,200 deg.C can be attained, the conversion can be increased.

Description

【発明の詳細な説明】 この発明は、種々の有機ケイ素化合物の合成原料として
、また微細シリカ、高純度合成石英、炭化ケイ素、窒化
ケイ素などの合成原料として有用な四塩化ケイ素を製造
する方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing silicon tetrachloride, which is useful as a raw material for the synthesis of various organosilicon compounds, as well as for the synthesis of fine silica, high-purity synthetic quartz, silicon carbide, silicon nitride, etc. It is something.

従来の技術 四塩化ケイ素の製造方法としては。Conventional technology As for the manufacturing method of silicon tetrachloride.

(1)金属ケイ素あるいはケイ素合金と塩化水素との反
応、 (2)炭化ケイ>鯨と塩素との反応、 が用いられているが、SiO2からSiあるいはSiC
を作る時の電力が莫大なので原料が高価となる欠点があ
る。
(1) Reaction between metallic silicon or silicon alloy and hydrogen chloride, (2) Reaction between silicon carbide>whale and chlorine.
The drawback is that the raw materials are expensive because it requires a huge amount of electricity to make.

そこでSiO2を直接原料とする□方法として、(3)
ケイ石等のSiO2含有物質と炭素との混合物に塩素を
接触させて四塩化ケイ素を生成させる方法、 5i02+2C+2CJ12→5iCus+2CO(D
が提案されているが、この方法は塩素との反応をtoo
o℃以1−の高温で行なわなければ好収率が得られず、
反応器を加熱するのが容易でないという欠点がある。
Therefore, as a □ method using SiO2 directly as a raw material, (3)
A method for producing silicon tetrachloride by bringing chlorine into contact with a mixture of SiO2-containing substances such as silica stone and carbon, 5i02+2C+2CJ12→5iCus+2CO(D
has been proposed, but this method requires too much reaction with chlorine.
A good yield cannot be obtained unless the process is carried out at a high temperature of 1-1°C or higher,
The disadvantage is that it is not easy to heat the reactor.

従来反応器の加熱は電気加熱によっているが、(V反応
器内面は耐腐食性でかつ熱伝導の悪い材質を使用する必
要があり、しかも外壁は強度の点で金属を使用する必要
があるため、加熱器を外部に設置するにはかなりの丁夫
を要し、(り反応器内部で加熱するためには、発熱体の
材質選定が大きな問題となる。
Conventionally, reactors are heated by electric heating, but (V reactor inner surface needs to be made of a material that is corrosion resistant and has poor heat conduction, and the outer wall needs to be made of metal for strength.) In order to install the heater outside, a considerable amount of work is required, and in order to heat the reactor inside, the selection of the material for the heating element becomes a major problem.

発明が解決しようとする問題点 本発明は上記第3の方法において、電気加熱によらない
加熱手段を用いることにより反応器の構造を1+’J 
rlj−にし、材質の選定を容易にすることができる四
塩化ケイ素の製造方法を提供することを目的とする。
Problems to be Solved by the Invention The present invention, in the third method described above, uses a heating means that does not rely on electric heating to improve the structure of the reactor by 1+'J.
It is an object of the present invention to provide a method for producing silicon tetrachloride which can be made into rlj- and which makes it easy to select the material.

発明の構成 問題点を解決するための手段 本発明による四塩化ケイ素の製造方法は、SiO2含有
物質と炭素との混合物に塩素を接触させて四t1!化ケ
イ素を製造するに当り、反応系に過剰の塩素と水素を供
給して塩化水素生成反応を起こさせ、その際発生した熱
品により反応系を1000°C以上に維持することより
なる。
Structure of the Invention Means for Solving the Problems The method for producing silicon tetrachloride according to the present invention comprises contacting a mixture of a SiO2-containing substance and carbon with chlorine to produce 4t1! In producing silicon oxide, excess chlorine and hydrogen are supplied to the reaction system to cause a hydrogen chloride production reaction, and the reaction system is maintained at a temperature of 1000° C. or higher using the heat generated at that time.

5i02含有物質としては、ケイ石、フライアッシュ、
シリカゾルなど、通常四塩化ケイ素の製造に用いられる
原料はすべて使用することができる。
5i02-containing substances include silica stone, fly ash,
All raw materials normally used for the production of silicon tetrachloride, such as silica sol, can be used.

またiRJ<”としては、活性炭、コークス、グラフア
イI・などを使用することができる。
In addition, activated carbon, coke, Grapheye I, etc. can be used as iRJ<''.

iR上の使用!□I:は前記式(1)に見る如く、5i
02に対しモル比で2倍j11又はそれ以−Lとするの
がよ−い。
Use on iR! □I: is 5i as seen in the above formula (1)
It is preferable that the molar ratio is 2 times j11 or more than 02.

1−1記のSiO2含有物質と炭素との混合物は、それ
ぞれを微粉化して混合したものでもよいが、混合物をペ
レット状に成型したものの方がなfましい。
The mixture of the SiO2-containing substance and carbon described in 1-1 may be a mixture of fine powders, but it is preferable to form the mixture into pellets.

反応器の形状は特に制限はなく、反応器下部に塩素と水
素との反応部を設けたものであれば連続式でもバッチ式
でもよいが、連続式の方が好ましい。
The shape of the reactor is not particularly limited, and may be either a continuous type or a batch type as long as it has a reaction section for chlorine and hydrogen at the bottom of the reactor, but a continuous type is preferred.

形式としては固定床型、移動床型、流動床型などが挙げ
られる。
Types include fixed bed type, moving bed type, fluidized bed type, etc.

反応温度は1000℃以上、望ましくは1200℃以上
とした方が高収率が得られる。
A higher yield can be obtained by setting the reaction temperature to 1000°C or higher, preferably 1200°C or higher.

反応温度の制御は加える過剰塩素と水素のjIXを変え
ることにより容易に行うことができる。
The reaction temperature can be easily controlled by changing the amount of excess chlorine and hydrogen added.

反応器の出[1からは四J!1化ケイ素、塩化水素およ
びCOの配合カスが排出されるので、まず冷却して四塩
化ケイ素を液化分離し、次いで水洗して塩化水素を塩酸
水溶液として回収する。
Out of the reactor [1 to 4 J! A mixture of silicon monide, hydrogen chloride, and CO is discharged, and the mixture is first cooled to liquefy and separate silicon tetrachloride, and then washed with water to recover hydrogen chloride as an aqueous hydrochloric acid solution.

この[程を第1図により説明すると、頂部に原料(Si
02含有物質と炭素との混合微粉末またはペレット)貯
槽1および原料供給バルブ2を設けた反応器3の下部に
塩素と水素の反応部4を設け、ここに水素供給管5.1
1!素供給管6および点火用バーナー7を設ける。記号
8は反応残渣の排出管である。
To explain this process with reference to FIG. 1, the raw material (Si
A chlorine and hydrogen reaction section 4 is provided at the bottom of the reactor 3, which is provided with a storage tank 1 (mixed fine powder or pellets of 02-containing substance and carbon) and a raw material supply valve 2, and a hydrogen supply pipe 5.1 is provided here.
1! A raw material supply pipe 6 and an ignition burner 7 are provided. Symbol 8 is a discharge pipe for reaction residue.

貯46iから原料を反応器3に供給してD;(料層9を
形成させ、水素供給管5から水素、塩素供給管6から塩
素を供給し、バーナー7で点火すれば、塩化水素生成反
応が起こり、この反応により高温になった塩化水素及び
残りの塩、もは反応器3の下部に導入され、111素が
5i02含有物質と炭素との混合物と反応して四塩化ケ
イ素を生成する。
By supplying the raw material from the storage 46i to the reactor 3 to form a material layer 9, supplying hydrogen from the hydrogen supply pipe 5 and chlorine from the chlorine supply pipe 6, and igniting it with the burner 7, a hydrogen chloride production reaction starts. occurs, and the hydrogen chloride and remaining salt heated by this reaction are also introduced into the lower part of reactor 3, where element 111 reacts with the mixture of 5i02-containing material and carbon to form silicon tetrachloride.

反応生成カスを冷却器10で冷却すると四塩化ケイ素は
液化するので分離器11で分離し、残ガスをHC文吸収
塔12に送り水に吸収させる。記号13は木の補給管、
14は生じた塩酸の排出管である。HCI吸収塔の」一
部のガス排出管15からはcoを含むガスが排出される
ので、化学反15原料又は燃料として利用することもI
Ir能である。
When the reaction product residue is cooled in the cooler 10, silicon tetrachloride is liquefied, so it is separated in the separator 11, and the remaining gas is sent to the HC absorption tower 12 and absorbed in water. Symbol 13 is a wooden supply pipe,
14 is a discharge pipe for the generated hydrochloric acid. Since gas containing CO is discharged from a part of the gas discharge pipe 15 of the HCI absorption tower, it can also be used as a chemical reactor 15 raw material or fuel.
Ir ability.

副生J′1!酸は酸洗等の用途に用いるか、電気分解し
て水素と塩素を回収して反応系に循環することもできる
Byproduct J'1! The acid can be used for purposes such as pickling, or it can be electrolyzed to recover hydrogen and chlorine and recycled to the reaction system.

Ii!素の過剰度は、過剰1t!素が塩化水素になる時
の反応熱が反応器3における四塩化ケイ素生成反応部の
温度を1000℃以上に維持するのに必要なjllとし
、反応器における熱損失等を考慮して定める。水素の供
給早、は過剰塩素11i−に見合うr藝1とする。  
・ 実施例 5i02含有率が90%以−にのケイ石を微粉砕し、こ
れにモル比で2倍+;+、のカーボンブラックを加えた
ものを4mmφX5mmのベレンI・に成型した。
Ii! The degree of excess of the element is 1 ton of excess! Jll is the reaction heat required to maintain the temperature of the silicon tetrachloride production reaction section in the reactor 3 at 1000° C. or higher, and is determined by taking into account heat loss in the reactor. The hydrogen supply rate is set to 1, which corresponds to 11i of excess chlorine.
・Example 5 Silica stone with an i02 content of 90% or more was finely pulverized, and carbon black of twice the molar ratio was added thereto, and the mixture was molded into a 4 mm φ x 5 mm belen I.

H2とC旦2をそれぞれ11194文流し、反応器温度
が1200℃になった1■ν点で反応器に部よりに記原
料ペレットを1時間当り300g供給し、吹込ガスら1
−をC見2は毎分6.3見、H2は毎分3.8文に変更
し、反応器下部より1時間当り約30gの反応残渣を抜
き出した。
11194 g of H2 and C2 were flowed each, and at the point 1 ν when the reactor temperature reached 1200°C, 300 g of raw material pellets per hour were supplied to the reactor by parts, and the blowing gas etc.
- was changed to 6.3 sentences per minute for C2 and 3.8 sentences per minute for H2, and about 30 g of reaction residue was extracted per hour from the bottom of the reactor.

このまま反応を続行したが温度制御は良好で。The reaction continued as it was, but the temperature was well controlled.

反応器北部より連続的に5iCi4を含むガスが流出し
た。
Gas containing 5iCi4 continuously flowed out from the northern part of the reactor.

発明の効果 (1)反応器の構造が簡単になり、材質の選定が容易に
なる。
Effects of the invention (1) The structure of the reactor is simplified and the selection of materials becomes easier.

(2)温度制御が容易になる。(2) Temperature control becomes easier.

(3)1200℃以上の高温も達成でき、反応率を高め
ることができる。
(3) High temperatures of 1200° C. or higher can be achieved and the reaction rate can be increased.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による四塩化ケイ素の製造工程を説明す
るための図である。
FIG. 1 is a diagram for explaining the manufacturing process of silicon tetrachloride according to the present invention.

Claims (1)

【特許請求の範囲】[Claims] SiO_2含有物質と炭素との混合物に塩素を接触させ
て四塩化ケイ素を製造するに当り、反応系に過剰の塩素
と水素を供給して塩化水素生成反応を起こさせ、その際
発生した熱量により反応系を1000℃以上に維持する
ことよりなる四塩化ケイ素の製造方法。
When producing silicon tetrachloride by bringing chlorine into contact with a mixture of a SiO_2-containing substance and carbon, excess chlorine and hydrogen are supplied to the reaction system to cause a hydrogen chloride production reaction, and the heat generated at that time causes the reaction to occur. A method for producing silicon tetrachloride, which comprises maintaining a system at 1000°C or higher.
JP28212085A 1985-12-17 1985-12-17 Method for producing silicon tetrachloride Expired - Lifetime JPH0643244B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28212085A JPH0643244B2 (en) 1985-12-17 1985-12-17 Method for producing silicon tetrachloride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28212085A JPH0643244B2 (en) 1985-12-17 1985-12-17 Method for producing silicon tetrachloride

Publications (2)

Publication Number Publication Date
JPS62143813A true JPS62143813A (en) 1987-06-27
JPH0643244B2 JPH0643244B2 (en) 1994-06-08

Family

ID=17648384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28212085A Expired - Lifetime JPH0643244B2 (en) 1985-12-17 1985-12-17 Method for producing silicon tetrachloride

Country Status (1)

Country Link
JP (1) JPH0643244B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166731A (en) * 1990-02-14 1992-11-24 Sharp Kabushiki Kaisha Developing unit having a rotation shaft and sealing member
WO2006053676A1 (en) * 2004-11-18 2006-05-26 Wacker Chemie Ag Process for preparing element halides
WO2006053675A1 (en) * 2004-11-18 2006-05-26 Wacker Chemie Ag Method for producing elemental halides
JP2012171843A (en) * 2011-02-23 2012-09-10 Toagosei Co Ltd Method for producing silicon tetrachloride
JP2013014446A (en) * 2011-06-30 2013-01-24 Toagosei Co Ltd Method for producing silicon tetrachloride
CN104276575A (en) * 2013-07-09 2015-01-14 四川瑞能硅材料有限公司 Chlorination reaction apparatus for silicon tetrachloride, preparation system for silicon tetrachloride, and preparation method
WO2016031362A1 (en) * 2014-08-28 2016-03-03 東亞合成株式会社 Trichlorosilane production method
DE102015202627A1 (en) * 2015-02-13 2016-08-18 Siemens Aktiengesellschaft Reactor for digesting a rare earth-containing solid

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3309126A1 (en) 2016-10-11 2018-04-18 Evonik Degussa GmbH Method for producing silicon tetrachloride by means of carbochlorination

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166731A (en) * 1990-02-14 1992-11-24 Sharp Kabushiki Kaisha Developing unit having a rotation shaft and sealing member
WO2006053676A1 (en) * 2004-11-18 2006-05-26 Wacker Chemie Ag Process for preparing element halides
WO2006053675A1 (en) * 2004-11-18 2006-05-26 Wacker Chemie Ag Method for producing elemental halides
JP2008520532A (en) * 2004-11-18 2008-06-19 ワッカー ケミー アクチエンゲゼルシャフト Method for producing elemental halide
JP2012171843A (en) * 2011-02-23 2012-09-10 Toagosei Co Ltd Method for producing silicon tetrachloride
JP2013014446A (en) * 2011-06-30 2013-01-24 Toagosei Co Ltd Method for producing silicon tetrachloride
CN104276575A (en) * 2013-07-09 2015-01-14 四川瑞能硅材料有限公司 Chlorination reaction apparatus for silicon tetrachloride, preparation system for silicon tetrachloride, and preparation method
WO2016031362A1 (en) * 2014-08-28 2016-03-03 東亞合成株式会社 Trichlorosilane production method
JPWO2016031362A1 (en) * 2014-08-28 2017-07-13 東亞合成株式会社 Method for producing trichlorosilane
DE102015202627A1 (en) * 2015-02-13 2016-08-18 Siemens Aktiengesellschaft Reactor for digesting a rare earth-containing solid

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Publication number Publication date
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