WO2018006694A1 - Method for producing silicon tetrachloride - Google Patents

Method for producing silicon tetrachloride Download PDF

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WO2018006694A1
WO2018006694A1 PCT/CN2017/088427 CN2017088427W WO2018006694A1 WO 2018006694 A1 WO2018006694 A1 WO 2018006694A1 CN 2017088427 W CN2017088427 W CN 2017088427W WO 2018006694 A1 WO2018006694 A1 WO 2018006694A1
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powder
sio
silicon tetrachloride
carbon
mixture
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PCT/CN2017/088427
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French (fr)
Chinese (zh)
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沈祖祥
王姗
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成都蜀菱科技发展有限公司
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Publication of WO2018006694A1 publication Critical patent/WO2018006694A1/en

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • C01B33/1071Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10715Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B9/00General methods of preparing halides
    • C01B9/02Chlorides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes

Definitions

  • the invention belongs to the field of silicon chemical industry, and in particular relates to a method for producing silicon tetrachloride.
  • Silicon tetrachloride is used in the manufacture of organosilicon compounds such as silicates, silicone monomers, silicone oils, high temperature insulating varnishes, silicone resins, silicone rubber and heat resistant backing materials.
  • High-purity silicon tetrachloride is a raw material for producing silane, trichlorosilane, dichlorodihydrosilane, polycrystalline silicon, high-purity silica, inorganic silicon compounds, and quartz fibers.
  • Silicon tetrachloride is used in the military industry to manufacture smoke agents. It can be used in the metallurgical industry to manufacture corrosion-resistant ferrosilicon. It is an essential basic chemical raw material for large-scale industrial production, including gas phase white carbon and ethyl silicate. The production of optical fiber and other materials is the largest.
  • the preparation methods of silicon tetrachloride mainly include the following:
  • No. 4,044,109 discloses a process for the production of SiCl 4 by the reaction of metallic silicon with HCl in the presence of an iron compound, wherein the iron compound comprises 10-43% of the total solids content.
  • JP 3746109 B discloses a process for preparing SiCl 4 by reacting metal silicon with HCl at a temperature of 250-500 ° C in the presence of Ni, Pd or a compound thereof.
  • CN103420382B discloses a method for preparing SiCl 4 by gas-solid synthesis reaction with chlorine gas in a bubbling bed using silicon powder as a main raw material without adding any catalyst, and the reaction temperature is 250-450 °C.
  • JPS59156908A discloses a method for preparing SiCl 4 by reacting silicon iron as a raw material with chlorine gas at 350-1000 ° C, wherein when iron, ferric chloride or the like is accumulated in the reactor, the ferrosilicon feed is stopped, only to the reactor Chlorine gas is introduced into the medium; when the temperature of the reactor drops to ⁇ 300 °C, the ferrosilicon raw material is added.
  • No. 4,130,632 discloses a process for the formation of trichlorosilane or silicon tetrachloride by reacting silicon, an aluminum alloy with hydrogen chloride or a chlorine gas.
  • the above method uses metal silicon or a silicon alloy as a raw material, and the chlorine gas utilization rate is high.
  • metal silicon or silicon alloys have higher smelting costs and high energy consumption. Therefore, the method has the disadvantages of high production cost, environmental friendliness, and high energy consumption.
  • the reaction of metallic silicon with HCl produces hydrochlorosilanes such as SiHCI 3 and SiH 2 Cl 2 , which makes the subsequent purification step of SiCl 4 cumbersome. It is therefore difficult to apply these methods to achieve large-scale production of silicon tetrachloride.
  • silicon carbide was used as a raw material to produce SiCl 4 .
  • JPS 63117907 A discloses a method of obtaining SiCl 4 by reacting silicon carbide having an average particle diameter of ⁇ 10 ⁇ m with chlorine gas at a temperature of 600 to 900 °C.
  • silicon carbide is relatively expensive and is therefore usually replaced by a mixture of SiO 2 and C.
  • SiO 2 it can be further divided into: natural SiO 2 , such as diatomaceous earth, quartz sand, quartz stone, silica, etc.; ash produced by industrial processes, such as large-scale electrochemical manufacturing process of silicon (such as metal silicon) , flue dust generated by the preparation process of silicon alloy, etc.; biomass burning ash rich in SiO 2 and C.
  • natural SiO 2 such as diatomaceous earth, quartz sand, quartz stone, silica, etc.
  • ash produced by industrial processes such as large-scale electrochemical manufacturing process of silicon (such as metal silicon) , flue dust generated by the preparation process of silicon alloy, etc.
  • biomass burning ash rich in SiO 2 and C biomass burning ash rich in SiO 2 and C.
  • JP 1983 217 420 A discloses a method for preparing silicon tetrachloride by reacting a silicon-containing substance, carbon and chlorine at a high temperature, wherein the silicon-containing substance is in a slight contact with a gas discharged from a closed furnace for preparing metal silicon or ferrosilicon. Then cool down and catch the dust.
  • JPH0218317A discloses a process for preparing a pellet by bonding water and glass with silica and carbon, and then reacting with chlorine gas at a high temperature to prepare silicon tetrachloride, wherein the silica is preferably silica and biomass burning ash.
  • the use of the gray powder as a raw material eliminates the grinding step compared to the use of natural SiO 2 as a raw material, and directly obtains a powder having a small particle diameter and a large BET surface area.
  • the problem that the fine powder easily flies out of the reactor usually requires the addition of a binder to form a pellet.
  • the added binder inevitably brings impurities to the reaction, which lowers the purity of the product and causes difficulties for subsequent purification steps. And in these methods, the supply of the gray powder raw material is not stable.
  • CA 1230465 A discloses a process for preparing silicon tetrachloride by reacting a material comprising SiO 2 with chlorine gas in the presence of a catalyst of carbon and a catalytic concentration, the catalyst being a transition metal halide, the fifth main group of the periodic table. Or a sub-group of chlorides, or a mixture thereof.
  • catalysts used in the preparation of silicon tetrachloride also include boride such as boric acid, boron trioxide, sodium tetraborate, potassium tetraborate, gaseous boron trichloride, and the like (see JP1982042524A, US4490344 and JP1982007813A); potassium compounds, for example Potassium carbonate, potassium chloride, potassium sulfate, potassium nitrate (see JPS62252311A); sulfur or sulfides such as carbon disulfide, sulfur dioxide, hydrogen sulfide, etc. (see US 4,847,059).
  • boride such as boric acid, boron trioxide, sodium tetraborate, potassium tetraborate, gaseous boron trichloride, and the like
  • potassium compounds for example Potassium carbonate, potassium chloride, potassium sulfate, potassium nitrate (see JPS62252311A); sulfur or sul
  • the catalyst itself introduces impurities into the product. These impurities are very detrimental to many applications of silicon tetrachloride in the semiconductor field and in optical fibers, for example, even trace amounts of boron in the ppm range are unacceptable.
  • No. 3,754,077 discloses a process for reacting a mixture of chlorosilanes with carbon, alumina or silica to increase the content of silicon tetrachloride.
  • JPH0699131, WO2015006173 and KR100134800 disclose a process for the preparation of silicon tetrachloride by reacting a mixture of HCl and a chlorosilane in the presence of a catalyst. Further, in the prior art, silicon tetrachloride as a by-product is also separated and recovered from a reaction product for preparing polycrystalline silicon or hydrosilane.
  • the dried SiO 2 powder, the carbonaceous material carbon powder and the chlorine gas are subjected to a chlorination reaction to obtain a silicon tetrachloride product.
  • the SiO 2 product is obtained by using a dried SiO 2 powder, a carbon elemental powder, and chlorine gas at a temperature of 800 to 1800 ° C to obtain a silicon tetrachloride product.
  • the dried SiO 2 powder and the carbon element powder are continuously fed to the reaction furnace with chlorine gas, and reacted at a temperature of 800 to 1800 ° C to obtain a silicon tetrachloride product.
  • the dried SiO 2 powder and the carbon element powder are uniformly mixed before the reaction to obtain a mixture.
  • the present invention provides a method of industrially producing silicon tetrachloride, characterized by comprising the following successive steps:
  • the mixture and chlorine gas are continuously added to the reaction furnace, and reacted at a temperature of 800-1800 ° C to continuously produce a silicon tetrachloride product.
  • the SiO 2 -containing material is 90%, preferably higher than 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98% or 99% of the SiO 2 content.
  • Mineral raw materials are 90%, preferably higher than 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98% or 99% of the SiO 2 content.
  • the SiO 2 -containing substance is selected from at least one of natural silica sand, silica, quartz sand, tridymite, and cristobalite.
  • the carbon-containing elemental substance is at least one of metallurgical coke, graphite powder, clean coal, or coke.
  • the SiO 2 powder and the carbon powder have a particle size of 100-300 mesh, such as 100 mesh, 120 mesh, 150 mesh, 170 mesh, 200 mesh, 230 mesh, 250 mesh, 270 mesh or 300 mesh. .
  • the water content of the SiO 2 powder and the carbon powder after drying is respectively less than 1% by weight, preferably less than 0.8% by weight, more preferably less than 0.5% by weight.
  • the dried SiO 2 powder and the carbon powder are uniformly mixed in a molar ratio of SiO 2 to carbon of from 1:2 to 1:4, preferably in a molar ratio of from 1:2 to 1:3, more preferably 1 : 2.5.
  • the reactor is an ebullated bed having a diameter greater than 1 m.
  • the mixture is heated with chlorine gas to 800-1800 ° C, preferably 1000-1500 ° C, such as 1050 ° C, 1100 ° C, 1150 ° C, 1200 ° C, 1250 ° C, 1300 ° C, 1350 ° C, 1400 ° C, 1450 ° C or 1500 ° C.
  • 1000-1500 ° C such as 1050 ° C, 1100 ° C, 1150 ° C, 1200 ° C, 1250 ° C, 1300 ° C, 1350 ° C, 1400 ° C, 1450 ° C or 1500 ° C.
  • the chlorine gas is fed to the reaction furnace at an empty bed flow rate of from 0.005 to 0.05 m/s, preferably from 0.01 to 0.03 m/s.
  • the production process does not use a catalyst.
  • the resulting silicon tetrachloride product is free of hydrochlorosilane.
  • the resulting silicon tetrachloride product has a purity greater than 90%, preferably greater than 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98% or 99%.
  • the method for industrially producing silicon tetrachloride of the invention has moderate reaction conditions, simple process and low cost, and the obtained silicon tetrachloride product has high purity, and is a silicon-based industry, such as silicone, gas-phase white carbon black, and communication fiber. Rapid development provides raw material security. Since in the method of the present invention, the SiO 2 powder and the carbon powder are dried before the reaction to remove moisture, the introduction of hydrogen in the reaction system is prevented, so that SiH 2 Cl 2 and SiHCl are not contained in the final product silicon tetrachloride. 3, etc. containing hydrochlorosilane. This increases the purity of the silicon tetrachloride and also reduces the difficulty and cost of subsequent silicon tetrachloride purification to some extent.
  • the SiO 2 -containing material is any SiO 2 content which can be purchased in large quantities above 90%, preferably above 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98% or 99% mineral raw material.
  • the raw material with less SiO 2 content is easy to participate in the reaction, it will lead to the generation of too many bad by-products, reduce the purity of the product silicon tetrachloride, and increase the purification cost of the subsequent silicon tetrachloride, which is more difficult.
  • the higher the SiO 2 content the more difficult it is to react with chlorine, and the higher the requirements for the reaction conditions.
  • the SiO 2 content is most preferably higher than 90%, more preferably 95%, even more preferably higher than 97%.
  • the SiO 2 -containing material according to the present invention is crystalline silica including, but not limited to, natural silica sand, silica, quartz sand, tridymite, cristobalite, and the like.
  • the carbonaceous material according to the present invention is a carbonaceous material which can be purchased in large quantities in the form of elemental carbon, including but not limited to: metallurgical coke, graphite powder, clean coal, activated carbon, charcoal, carbon black, smokeless carbon, coke, and the like.
  • the chlorine gas according to the present invention is commercially available, and the chlorine content is higher than 99.6%.
  • the SiO 2 powder and the carbon powder obtained after the grinding are required to be dried to remove moisture, and hydrogen is introduced into the reaction system to form hydrochlorosilane such as SiH 2 Cl 2 or SiHCl 3 to affect the quality of silicon tetrachloride.
  • the water content of the SiO 2 powder and the carbon powder are respectively less than 1% by weight, preferably less than 0.8% by weight, more preferably less than 0.5% by weight. Drying can be carried out using any drying equipment and techniques well known to those skilled in the art that meet the drying conditions of the materials to which the present invention relates.
  • the dried SiO 2 powder and the carbon powder are uniformly mixed in a molar ratio of SiO 2 to carbon of from 1:2 to 1:4, preferably in a molar ratio of from 1:2 to 1:3, more preferably 1:2.5.
  • the amount of toner can be slightly excessive to make the reaction more complete.
  • the reactor used in the silicon tetrachloride production method according to the present invention is preferably a bubbling bed.
  • the use of the ebullating bed can increase the contact area between the chlorine gas and the mixture, increase the production strength, and the flowing powder can be easily added or taken out without affecting the progress of the reaction, thereby allowing the reaction to proceed continuously.
  • mixed SiO 2 powder and carbon powder are added to the reaction furnace, and then chlorine gas is introduced from the bottom of the reaction furnace to keep the powder in a boiling form at all times.
  • the temperature of the reaction furnace is controlled to be 800-1800 ° C, preferably 1000-1500 ° C, such as 1050 ° C, 1100 ° C, 1150 ° C, 1200 ° C, 1250 ° C, 1300 ° C, 1350 ° C, 1400 ° C, 1450 ° C or 1500 ° C.
  • the empty bed flow rate for controlling the introduction of chlorine gas is from 0.005 to 0.05 m/s, preferably from 0.01 to 0.03 m/s. The flow rate is too low, the reaction efficiency is low, and it is not economical. The flow rate is too high, and the mixture is taken away, which affects the output.
  • the dried SiO 2 powder and the carbon powder directly participate in the chlorination reaction in the reaction furnace without undergoing a granulation process, thereby avoiding the introduction of other impurities.
  • the silicon tetrachloride produced according to the method of the present invention has a large yield and a high purity.
  • the resulting silicon tetrachloride product has a purity greater than 90%, preferably greater than 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98% or 99%.
  • the silicon tetrachloride product produced according to the process of the invention does not contain hydrochlorosilanes such as SiH 2 Cl 2 , SiHCl 3 and the like.
  • the SiO 2 powder and the carbon powder are dried before mixing to remove moisture, thereby avoiding introduction of hydrogen into the reaction system, so that the final product silicon tetrachloride does not contain SiH 2 Cl 2 or SiHCl 3 .
  • Hydrochlorosilane This increases the purity of the silicon tetrachloride and also reduces the difficulty and cost of subsequent silicon tetrachloride purification to some extent.
  • the commercially available silica sand (silica content greater than 95%) and coke are separately ground to a silica sand powder and carbon powder having a particle diameter of about 100 mesh, and the powder is dried to a water content of less than 1% by weight using a drying device, according to silica sand.
  • the mixture of carbon powder 1:2.5 (molar ratio) was uniformly mixed to obtain a solid mixture.
  • the mixture and chlorine were separately fed to the reactor in a continuous manner, wherein the amount of chlorine added was controlled at an empty bed flow rate of 0.03 m/s to maintain the mixture of the reactor in the form of a bubbling bed.
  • the temperature of the reaction furnace was controlled at about 1450 ° C.
  • the chlorine gas and the mixture were continuously produced in a gas-solid synthesis reaction in a reaction furnace at a high temperature to obtain silicon tetrachloride gas, and collected by a collection system to obtain a silicon tetrachloride condensate.
  • the average purity of silicon tetrachloride was determined to be about 95%, the chlorine gas conversion rate was 93%, and hydrochlorosilanes such as SiH 2 Cl 2 and SiHCl 3 were not detected.
  • the commercially available silica (silica content greater than 95%) and the clean coal are respectively ground into silica powder and carbon powder having a particle diameter of about 300 mesh, and the powder is dried to a water content of less than 1% by using a drying device.
  • a ratio of silica sand:carbon powder 1:3 (molar ratio) was uniformly mixed to obtain a solid mixture.
  • the mixture and chlorine were separately fed to the reactor in a continuous manner, wherein chlorine gas was added at an empty bed flow rate of about 0.03 m/s to maintain the mixture of the reactor in an ebullated bed form.
  • the temperature of the reaction furnace is controlled to about 1050 ° C.
  • the chlorine gas and the mixture are continuously produced by a gas-solid synthesis reaction in a reaction furnace to obtain silicon tetrachloride gas, and a silicon tetrachloride condensate is collected by a collecting system. It was determined that the average purity of silicon tetrachloride was about 90%, the conversion ratio of chlorine gas was 88%, and hydrochlorosilane such as SiH 2 Cl 2 or SiHCl 3 was not detected.
  • the commercially available quartz sand (silica content greater than 97%) and metallurgical coke are respectively ground into quartz sand powder and carbon powder having a particle diameter of about 150 mesh, and the powder is dried to a water content of less than 1% by using a drying device.
  • the mixture and chlorine were separately fed to the reactor in a continuous manner, wherein chlorine gas was added at an empty bed flow rate of about 0.03 m/s to maintain the mixture of the reactor in an ebullated bed form.
  • the temperature of the reaction furnace is controlled at about 1150 ° C.
  • the chlorine gas and the mixture are continuously produced in a gas-solid synthesis reaction in a reaction furnace to obtain silicon tetrachloride gas, and the silicon tetrachloride condensate is collected by a collecting system.
  • the average purity of silicon tetrachloride was determined to be about 95%, the chlorine gas conversion rate was 90%, and hydrochlorosilanes such as SiH 2 Cl 2 and SiHCl 3 were not detected.
  • the commercially available cristobalite (silica content greater than 97%) and the graphite powder are separately ground to form a square quartz powder and carbon powder having a particle diameter of about 200 mesh, and the powder is dried to a water content of less than 0.8% by using a drying device.
  • the mixture and chlorine were separately fed to the reactor in a continuous manner, wherein chlorine gas was added at an empty bed flow rate of about 0.05 m/s to maintain the mixture of the reactor in an ebullated bed form.
  • the temperature of the reaction furnace is controlled at about 1350 ° C.
  • the chlorine gas and the mixture are continuously produced by a gas-solid synthesis reaction in a reaction furnace at a high temperature to obtain silicon tetrachloride gas, and a silicon tetrachloride condensate is collected by a collecting system.
  • the average purity of silicon tetrachloride was determined to be about 95%, the chlorine gas conversion rate was 92%, and hydrochlorosilanes such as SiH 2 Cl 2 and SiHCl 3 were not detected.
  • scaly quartz silica content greater than 96%) and charcoal were separately ground to form quartz silica powder and carbon powder having a particle size of about 170 mesh, and the powder was dried to a water content of less than 0.5% by weight using a drying apparatus.
  • the mixture and chlorine gas were separately fed to the reactor in a continuous manner, wherein chlorine gas was added at an empty bed flow rate of about 0.04 m/s to maintain the mixture of the reactor in an ebullated bed form.
  • the temperature of the reaction furnace was controlled at about 1200 ° C.
  • the chlorine gas and the mixed material were continuously produced by a gas-solid synthesis reaction in a reaction furnace at a high temperature to obtain silicon tetrachloride gas, and a silicon tetrachloride condensate was collected by a collecting system.
  • the average purity of silicon tetrachloride was determined to be about 96%, the conversion of chlorine gas was 90%, and hydrochlorosilane such as SiH 2 Cl 2 or SiHCl 3 was not detected.
  • the commercially available silica (silica content greater than 98%) and activated carbon are separately ground to a silica powder having a particle size of about 230 mesh, carbon powder, and the powder is dried to a water content of less than 0.6% by weight using a drying apparatus, and silica is used.
  • a ratio of carbon powder 1:3 (molar ratio) was uniformly mixed to obtain a solid mixture.
  • the mixture and chlorine were separately fed to the reactor in a continuous manner, wherein chlorine gas was added at an empty bed flow rate of about 0.02 m/s to maintain the mixture of the reactor in an ebullated bed form.
  • the temperature of the reaction furnace is controlled at about 1350 ° C.
  • the chlorine gas and the mixture are continuously produced by a gas-solid synthesis reaction in a reaction furnace at a high temperature to obtain silicon tetrachloride gas, and a silicon tetrachloride condensate is collected by a collecting system.
  • the average purity of silicon tetrachloride was determined to be about 98%, the chlorine gas conversion rate was 92%, and hydrochlorosilanes such as SiH 2 Cl 2 and SiHCl 3 were not detected.
  • the solid mixture is not dried by the obtained silica sand powder and carbon powder.
  • the mixture and chlorine were separately fed to the reactor in a continuous manner, wherein the amount of chlorine added was controlled at an empty bed flow rate of 0.03 m/s to maintain the mixture of the reactor in the form of a bubbling bed.
  • the temperature of the reaction furnace is controlled at about 1350 ° C.
  • the chlorine gas and the mixture are continuously produced by a gas-solid synthesis reaction in a reaction furnace at a high temperature to obtain silicon tetrachloride gas, and a silicon tetrachloride condensate is collected by a collecting system.
  • the average purity of silicon tetrachloride was determined to be about 93%, the chlorine gas conversion rate was 94%, and about 0.7% of hydrochlorosilanes such as SiH 2 Cl 2 and SiHCl 3 were detected.

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Abstract

A method for producing silicon tetrachloride. The method comprises the following sequence of steps: a. grinding a SiO2-containing material and a carbon-containing material separately to obtain a SiO2 powder and a carbon powder; b. drying the SiO2 powder and the carbon powder; c. uniformly mixing the dried SiO2 powder and carbon powder to obtain a mixture; and d. continuously adding the mixture into a reactor vessel, then performing a chlorination reaction at a temperature of 800-1800°C to obtain a silicon tetrachloride product.

Description

生产四氯化硅的方法Method for producing silicon tetrachloride 技术领域Technical field
本发明属于硅化工领域,特别是涉及一种生产四氯化硅的方法。The invention belongs to the field of silicon chemical industry, and in particular relates to a method for producing silicon tetrachloride.
背景技术Background technique
四氯化硅用于制造有机硅化合物,如硅酸酯类、有机硅单体、有机硅油、高温绝缘漆、有机硅树脂、硅橡胶和耐热垫衬材料。高纯度四氯化硅为制造硅烷、三氯氢硅、二氯二氢硅、多晶硅、高纯二氧化硅和无机硅化合物、石英纤维的原料。四氯化硅在军事工业中用于制造烟幕剂,在冶金工业可用于制造耐腐蚀硅铁铸造,是大工业化生产中必不可少的基础化工原料,其中以气相白炭黑、硅酸乙酯、光纤等材料的生产用量最大。Silicon tetrachloride is used in the manufacture of organosilicon compounds such as silicates, silicone monomers, silicone oils, high temperature insulating varnishes, silicone resins, silicone rubber and heat resistant backing materials. High-purity silicon tetrachloride is a raw material for producing silane, trichlorosilane, dichlorodihydrosilane, polycrystalline silicon, high-purity silica, inorganic silicon compounds, and quartz fibers. Silicon tetrachloride is used in the military industry to manufacture smoke agents. It can be used in the metallurgical industry to manufacture corrosion-resistant ferrosilicon. It is an essential basic chemical raw material for large-scale industrial production, including gas phase white carbon and ethyl silicate. The production of optical fiber and other materials is the largest.
目前,四氯化硅的制备方法主要有以下几种:At present, the preparation methods of silicon tetrachloride mainly include the following:
(1)金属硅或硅合金与氯气或HCl反应制备四氯化硅(1) Preparation of silicon tetrachloride by reacting metal silicon or silicon alloy with chlorine or HCl
US4044109公开了一种用金属硅与HCl在铁化合物的存在下反应生产SiCl4的方法,其中所述铁化合物占总固体含量的10-43%。JP3746109B公开了一种在Ni、Pd或其化合物的存在下,用金属硅与HCl在250-500℃的温度下反应制备SiCl4的方法。CN103420382B公开了一种用硅粉作为主要原料,在不添加任何催化剂的情况下,与氯气在沸腾床中发生气固合成反应制备SiCl4的方法,反应温度为250-450℃。No. 4,044,109 discloses a process for the production of SiCl 4 by the reaction of metallic silicon with HCl in the presence of an iron compound, wherein the iron compound comprises 10-43% of the total solids content. JP 3746109 B discloses a process for preparing SiCl 4 by reacting metal silicon with HCl at a temperature of 250-500 ° C in the presence of Ni, Pd or a compound thereof. CN103420382B discloses a method for preparing SiCl 4 by gas-solid synthesis reaction with chlorine gas in a bubbling bed using silicon powder as a main raw material without adding any catalyst, and the reaction temperature is 250-450 °C.
JPS59156908A公开了一种用硅铁作为原料与氯气在350-1000℃反应制备SiCl4的方法,其中当铁、氯化铁等物质在反应器中积累时,停止硅铁进料,仅向反应器中通入氯气;当反应器的温度降至≤300℃时,再加入硅铁原料。US4130632公开了一种利用硅、铝合金与氯化氢或氯气气体发生反应,生成三氯氢硅或四氯化硅的方法。JPS59156908A discloses a method for preparing SiCl 4 by reacting silicon iron as a raw material with chlorine gas at 350-1000 ° C, wherein when iron, ferric chloride or the like is accumulated in the reactor, the ferrosilicon feed is stopped, only to the reactor Chlorine gas is introduced into the medium; when the temperature of the reactor drops to ≤300 °C, the ferrosilicon raw material is added. No. 4,130,632 discloses a process for the formation of trichlorosilane or silicon tetrachloride by reacting silicon, an aluminum alloy with hydrogen chloride or a chlorine gas.
以上方法使用金属硅或硅合金作为原料,氯气利用率高。然而,金属硅或硅合金的冶炼成本较高、能耗很大。因此该方法存在生产成本高、对环境不友好、能耗高等缺点。此外,金属硅与HCl的反应产生SiHCI3、SiH2Cl2等含氢氯硅烷,使SiCl4后续纯化步骤较为繁琐。因此很难将这些方法用于实现四氯化硅的大规模生产。The above method uses metal silicon or a silicon alloy as a raw material, and the chlorine gas utilization rate is high. However, metal silicon or silicon alloys have higher smelting costs and high energy consumption. Therefore, the method has the disadvantages of high production cost, environmental friendliness, and high energy consumption. In addition, the reaction of metallic silicon with HCl produces hydrochlorosilanes such as SiHCI 3 and SiH 2 Cl 2 , which makes the subsequent purification step of SiCl 4 cumbersome. It is therefore difficult to apply these methods to achieve large-scale production of silicon tetrachloride.
(2)SiO2和碳的混合物与氯气反应制备四氯化硅 (2) a mixture of SiO 2 and carbon is reacted with chlorine to prepare silicon tetrachloride
早期曾用碳化硅为原料生产SiCl4。例如JPS63117907A公开了用平均粒径≤10μm的碳化硅与氯气在600-900℃的温度下反应获得SiCl4的方法。但碳化硅成本较高,因此通常用SiO2与C的混合物代替。根据SiO2的存在形式,又可以分为:天然SiO2,如硅藻土、石英砂、石英石、硅石等;工业工艺产生的灰,例如由硅的大规模电化学制造过程(如金属硅、硅合金等的制备过程)产生的烟道尘;富含SiO2和C的生物质燃烧灰。在该现有技术中,通过将SiO2、C和C14直接混合反应来获得SiCl4In the early days, silicon carbide was used as a raw material to produce SiCl 4 . For example, JPS 63117907 A discloses a method of obtaining SiCl 4 by reacting silicon carbide having an average particle diameter of ≤10 μm with chlorine gas at a temperature of 600 to 900 °C. However, silicon carbide is relatively expensive and is therefore usually replaced by a mixture of SiO 2 and C. According to the form of SiO 2 , it can be further divided into: natural SiO 2 , such as diatomaceous earth, quartz sand, quartz stone, silica, etc.; ash produced by industrial processes, such as large-scale electrochemical manufacturing process of silicon (such as metal silicon) , flue dust generated by the preparation process of silicon alloy, etc.; biomass burning ash rich in SiO 2 and C. In this prior art, by the SiO 2, C C1 4 directly obtained reaction mixture and SiCl 4.
JP1983217420A公开了一种用含硅物质、碳和氯气在高温下反应制备四氯化硅的方法,其中所述含硅物质是将由制备金属硅或硅铁的密闭炉中排出的气体和空气稍微接触然后降温并捕获的灰尘。JPH0218317A公开了一种用二氧化硅和碳用水玻璃粘合起来制备小球,然后在高温下与氯气反应制备四氯化硅的方法,其中二氧化硅优选硅石和生物质燃烧灰。JP 1983 217 420 A discloses a method for preparing silicon tetrachloride by reacting a silicon-containing substance, carbon and chlorine at a high temperature, wherein the silicon-containing substance is in a slight contact with a gas discharged from a closed furnace for preparing metal silicon or ferrosilicon. Then cool down and catch the dust. JPH0218317A discloses a process for preparing a pellet by bonding water and glass with silica and carbon, and then reacting with chlorine gas at a high temperature to prepare silicon tetrachloride, wherein the silica is preferably silica and biomass burning ash.
使用灰粉作为原料与使用天然SiO2作为原料相比省去研磨步骤,直接获得粒径小,BET表面积大的粉粒。但是为防止反应过程中颗粒崩坏,微粉容易从反应器中飞出的问题,通常需要加入粘合剂制成小球。加入的粘合剂则不可避免地为反应带来杂质,使产物纯度降低,并为后续的纯化步骤造成困难。并且在这些方法中灰粉原料的供应并不稳定。The use of the gray powder as a raw material eliminates the grinding step compared to the use of natural SiO 2 as a raw material, and directly obtains a powder having a small particle diameter and a large BET surface area. However, in order to prevent the particles from collapsing during the reaction, the problem that the fine powder easily flies out of the reactor usually requires the addition of a binder to form a pellet. The added binder inevitably brings impurities to the reaction, which lowers the purity of the product and causes difficulties for subsequent purification steps. And in these methods, the supply of the gray powder raw material is not stable.
此外,在采用天然SiO2制备四氯化硅的现有技术中常常会加入催化剂,以降低反应温度,提高反应速率。例如,CA1230465A公开了一种将包含SiO2的材料与氯气在碳和催化浓度的催化剂存在下反应来制备四氯化硅的方法,所述催化剂是过渡金属卤化物、元素周期表第五主族或副族的氯化物、或其混合物。四氯化硅制备中采用的其他催化剂还包括硼化物,例如硼酸、三氧化二硼、四硼酸钠、四硼酸钾、气态三氯化硼等(参见JP1982042524A、US4490344和JP1982007813A);钾化合物,例如碳酸钾、氯化钾、硫酸钾、硝酸钾(参见JPS62252311A);硫或硫化物,如二硫化碳、二氧化硫、硫化氢等(参见US4847059)。Further, in the prior art for preparing silicon tetrachloride using natural SiO 2 , a catalyst is often added to lower the reaction temperature and increase the reaction rate. For example, CA 1230465 A discloses a process for preparing silicon tetrachloride by reacting a material comprising SiO 2 with chlorine gas in the presence of a catalyst of carbon and a catalytic concentration, the catalyst being a transition metal halide, the fifth main group of the periodic table. Or a sub-group of chlorides, or a mixture thereof. Other catalysts used in the preparation of silicon tetrachloride also include boride such as boric acid, boron trioxide, sodium tetraborate, potassium tetraborate, gaseous boron trichloride, and the like (see JP1982042524A, US4490344 and JP1982007813A); potassium compounds, for example Potassium carbonate, potassium chloride, potassium sulfate, potassium nitrate (see JPS62252311A); sulfur or sulfides such as carbon disulfide, sulfur dioxide, hydrogen sulfide, etc. (see US 4,847,059).
然而,催化剂本身为产物带来杂质。这些杂质对于在半导体领域和光纤中四氯化硅的多种应用是非常有害的,例如即使ppm范围的痕量硼也是不可接受的。However, the catalyst itself introduces impurities into the product. These impurities are very detrimental to many applications of silicon tetrachloride in the semiconductor field and in optical fibers, for example, even trace amounts of boron in the ppm range are unacceptable.
(3)氯硅烷作为原料制备四氯化硅(3) Preparation of silicon tetrachloride by using chlorosilane as a raw material
US3754077公开了将氯硅烷混合物与碳、氧化铝或二氧化硅反应从而提高四氯化硅含量的方法。JPH0699131、WO2015006173和KR100134800公开了用HCl和氯硅烷混合物在催化剂存在下反应制备四氯化硅的方法。此外,现有技术中也会从制备多晶硅或氢硅烷的反应产物中分离回收作为副产物的四氯化硅。No. 3,754,077 discloses a process for reacting a mixture of chlorosilanes with carbon, alumina or silica to increase the content of silicon tetrachloride. JPH0699131, WO2015006173 and KR100134800 disclose a process for the preparation of silicon tetrachloride by reacting a mixture of HCl and a chlorosilane in the presence of a catalyst. Further, in the prior art, silicon tetrachloride as a by-product is also separated and recovered from a reaction product for preparing polycrystalline silicon or hydrosilane.
但是,以上方法存在反应收率低、杂质含量高等问题,无法获得大量、价格低廉的四 氯化硅。However, the above methods have problems such as low reaction yield and high impurity content, and it is impossible to obtain a large number of inexpensive four. Silicon chloride.
因此,需要提供一种能够大规模、低成本工业化生产四氯化硅的方法,而且该方法操作简单,所得的四氯化硅杂质含量非常少,纯度较高。Therefore, there is a need to provide a method for industrially producing silicon tetrachloride on a large scale and at a low cost, and the method is simple in operation, and the obtained silicon tetrachloride impurity content is very small and the purity is high.
发明内容Summary of the invention
本发明的一种实施方式涉及一种生产四氯化硅的方法,包括以下步骤:One embodiment of the invention relates to a method of producing silicon tetrachloride comprising the steps of:
使干燥的SiO2粉末、含碳物质碳粉与氯气进行氯化反应,得到四氯化硅产品。The dried SiO 2 powder, the carbonaceous material carbon powder and the chlorine gas are subjected to a chlorination reaction to obtain a silicon tetrachloride product.
本发明的一种实施方式涉及一种生产四氯化硅的方法,包括以下步骤:One embodiment of the invention relates to a method of producing silicon tetrachloride comprising the steps of:
使用干燥的SiO2粉末、碳单质物粉末与氯气在800-1800℃的温度下进行氯化反应,得到四氯化硅产品。The SiO 2 product is obtained by using a dried SiO 2 powder, a carbon elemental powder, and chlorine gas at a temperature of 800 to 1800 ° C to obtain a silicon tetrachloride product.
本发明的一种实施方式涉及一种生产四氯化硅的方法,包括以下步骤:One embodiment of the invention relates to a method of producing silicon tetrachloride comprising the steps of:
将SiO2粉末和碳单质物粉末进行干燥;以及Drying the SiO 2 powder and the carbon element powder;
将干燥的SiO2粉末和碳单质物粉末与氯气连续加入到反应炉中,在800-1800℃的温度下反应,得到四氯化硅产品。The dried SiO 2 powder and the carbon element powder are continuously fed to the reaction furnace with chlorine gas, and reacted at a temperature of 800 to 1800 ° C to obtain a silicon tetrachloride product.
根据一种实施方式,在反应之前,将干燥的SiO2粉末和碳单质物粉末均匀混合,得到混合料。According to one embodiment, the dried SiO 2 powder and the carbon element powder are uniformly mixed before the reaction to obtain a mixture.
根据一种实施方式,本发明提供一种工业化生产四氯化硅的方法,其特征在于包括以下连续步骤:According to one embodiment, the present invention provides a method of industrially producing silicon tetrachloride, characterized by comprising the following successive steps:
a.分别研磨含SiO2的物质和含碳单质物质,得到SiO2粉末和碳粉;a. separately grinding the SiO 2 -containing substance and the carbon-containing elemental substance to obtain SiO 2 powder and carbon powder;
b.将所述SiO2粉末和碳粉进行干燥;b. drying the SiO 2 powder and carbon powder;
c.将干燥的SiO2粉末和碳粉均匀混合,得到混合料;和c. uniformly mixing the dried SiO 2 powder and the carbon powder to obtain a mixture;
d.将混合料与氯气连续加入到反应炉中,在800-1800℃的温度下反应,连续生产得到四氯化硅产品。 d. The mixture and chlorine gas are continuously added to the reaction furnace, and reacted at a temperature of 800-1800 ° C to continuously produce a silicon tetrachloride product.
根据一种实施方式,所述含SiO2的物质是SiO2含量90%、优选高于91%、92%、93%、94%、95%、96%、97%、98%或99%的矿物原料。According to one embodiment, the SiO 2 -containing material is 90%, preferably higher than 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98% or 99% of the SiO 2 content. Mineral raw materials.
根据一种实施方式,所述含SiO2的物质选自天然硅砂、硅石、石英砂、鳞石英、和方石英中的至少一种。According to an embodiment, the SiO 2 -containing substance is selected from at least one of natural silica sand, silica, quartz sand, tridymite, and cristobalite.
根据一种实施方式,所述含碳单质物质是冶金焦、石墨粉、精煤、或焦碳中的至少一种。According to an embodiment, the carbon-containing elemental substance is at least one of metallurgical coke, graphite powder, clean coal, or coke.
根据一种实施方式,所述SiO2粉末和碳粉的粒径为100-300目,例如100目、120目、150目、170目、200目、230目、250目、270目或300目。According to one embodiment, the SiO 2 powder and the carbon powder have a particle size of 100-300 mesh, such as 100 mesh, 120 mesh, 150 mesh, 170 mesh, 200 mesh, 230 mesh, 250 mesh, 270 mesh or 300 mesh. .
根据一种实施方式,干燥之后SiO2粉末和碳粉的含水量分别低于1%重量,优选低于0.8%重量,更优选低于0.5%重量。According to one embodiment, the water content of the SiO 2 powder and the carbon powder after drying is respectively less than 1% by weight, preferably less than 0.8% by weight, more preferably less than 0.5% by weight.
根据一种实施方式,干燥的SiO2粉末和碳粉按SiO2与碳的摩尔比为1∶2-1∶4的比例均匀混合,优选摩尔比为1∶2-1∶3,更优选1∶2.5。According to one embodiment, the dried SiO 2 powder and the carbon powder are uniformly mixed in a molar ratio of SiO 2 to carbon of from 1:2 to 1:4, preferably in a molar ratio of from 1:2 to 1:3, more preferably 1 : 2.5.
根据一种实施方式,反应炉是直径大于1m的沸腾床。According to one embodiment, the reactor is an ebullated bed having a diameter greater than 1 m.
根据一种实施方式,所述混合料与氯气加热至800-1800℃,优选1000-1500℃,例如1050℃、1100℃、1150℃、1200℃、1250℃、1300℃、1350℃、1400℃、1450℃或1500℃。According to one embodiment, the mixture is heated with chlorine gas to 800-1800 ° C, preferably 1000-1500 ° C, such as 1050 ° C, 1100 ° C, 1150 ° C, 1200 ° C, 1250 ° C, 1300 ° C, 1350 ° C, 1400 ° C, 1450 ° C or 1500 ° C.
根据一种实施方式,氯气以0.005-0.05m/s,优选0.01-0.03m/s的空床流速加入反应炉。According to one embodiment, the chlorine gas is fed to the reaction furnace at an empty bed flow rate of from 0.005 to 0.05 m/s, preferably from 0.01 to 0.03 m/s.
根据一种实施方式,该生产方法不使用催化剂。According to one embodiment, the production process does not use a catalyst.
根据一种实施方式,所得四氯化硅产品不含氢氯硅烷。According to one embodiment, the resulting silicon tetrachloride product is free of hydrochlorosilane.
根据一种实施方式,所得四氯化硅产品的纯度大于90%,优选大于91%、92%、93%、94%、95%、96%、97%、98%或99%。According to one embodiment, the resulting silicon tetrachloride product has a purity greater than 90%, preferably greater than 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98% or 99%.
本发明工业化生产四氯化硅的方法反应条件要求适中,工艺简单,成本较低,所得的四氯化硅产品纯度较高,为有机硅、气相白炭黑、通讯光纤等涉及硅系行业的迅猛发展提供了原料保障。由于在本发明的方法中,SiO2粉末和碳粉在反应前进行干燥,从而除去水分,避免在反应系统中引入氢元素,使得在最终产物四氯化硅中不含SiH2Cl2、SiHCl3等含氢氯硅烷。这提高了四氯化硅的纯度,同时也在一定程度上降低了后续的四氯化硅纯化的 难度和成本。The method for industrially producing silicon tetrachloride of the invention has moderate reaction conditions, simple process and low cost, and the obtained silicon tetrachloride product has high purity, and is a silicon-based industry, such as silicone, gas-phase white carbon black, and communication fiber. Rapid development provides raw material security. Since in the method of the present invention, the SiO 2 powder and the carbon powder are dried before the reaction to remove moisture, the introduction of hydrogen in the reaction system is prevented, so that SiH 2 Cl 2 and SiHCl are not contained in the final product silicon tetrachloride. 3, etc. containing hydrochlorosilane. This increases the purity of the silicon tetrachloride and also reduces the difficulty and cost of subsequent silicon tetrachloride purification to some extent.
发明详述Detailed description of the invention
原料来源Source of raw materials
根据本发明,含SiO2的物质是可以大量采购的任何SiO2含量高于90%、优选高于91%、92%、93%、94%、95%、96%、97%、98%或99%的矿物原料。SiO2含量较少的原料虽然容易参与反应,但会导致太多不良副产物的产生,降低产物四氯化硅的纯度,并使后续四氯化硅的纯化成本增加,难度加大。SiO2含量越高,其与氯气反应的难度也越大,对反应条件的要求也越高。在根据本发明的含SiO2的物质中,SiO2含量最优选为高于90%,更优选95%,甚至更优选高于97%。According to the invention, the SiO 2 -containing material is any SiO 2 content which can be purchased in large quantities above 90%, preferably above 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98% or 99% mineral raw material. Although the raw material with less SiO 2 content is easy to participate in the reaction, it will lead to the generation of too many bad by-products, reduce the purity of the product silicon tetrachloride, and increase the purification cost of the subsequent silicon tetrachloride, which is more difficult. The higher the SiO 2 content, the more difficult it is to react with chlorine, and the higher the requirements for the reaction conditions. In the SiO 2 -containing substance according to the present invention, the SiO 2 content is most preferably higher than 90%, more preferably 95%, even more preferably higher than 97%.
根据本发明的含SiO2的物质是结晶二氧化硅,包括但不限于:天然硅砂、硅石、石英砂、鳞石英、方石英等。The SiO 2 -containing material according to the present invention is crystalline silica including, but not limited to, natural silica sand, silica, quartz sand, tridymite, cristobalite, and the like.
根据本发明的含碳物质是可以大量采购的以单质碳存在的碳质原料,包括但不限于:冶金焦、石墨粉、精煤、活性炭、木炭、炭黑、无烟碳、焦碳等。The carbonaceous material according to the present invention is a carbonaceous material which can be purchased in large quantities in the form of elemental carbon, including but not limited to: metallurgical coke, graphite powder, clean coal, activated carbon, charcoal, carbon black, smokeless carbon, coke, and the like.
根据本发明的氯气通过商购获得,氯气含量高于99.6%。The chlorine gas according to the present invention is commercially available, and the chlorine content is higher than 99.6%.
干燥、混合Dry, mixed
根据本发明,研磨后所得的SiO2粉末和碳粉需要进行干燥,以除去水分,减少氢元素进入反应系统生成SiH2Cl2、SiHCl3等含氢氯硅烷,影响四氯化硅质量。干燥后,SiO2粉末和碳粉的含水量分别低于1%重量,优选低于0.8%重量,更优选低于0.5%重量。可使用本领域技术人员熟知的任何满足本发明涉及的材料干燥条件的干燥设备和技术进行干燥。According to the present invention, the SiO 2 powder and the carbon powder obtained after the grinding are required to be dried to remove moisture, and hydrogen is introduced into the reaction system to form hydrochlorosilane such as SiH 2 Cl 2 or SiHCl 3 to affect the quality of silicon tetrachloride. After drying, the water content of the SiO 2 powder and the carbon powder are respectively less than 1% by weight, preferably less than 0.8% by weight, more preferably less than 0.5% by weight. Drying can be carried out using any drying equipment and techniques well known to those skilled in the art that meet the drying conditions of the materials to which the present invention relates.
定期检测产品四氯化硅中含氢氯硅烷的含量。如果含氢氯硅烷的含量较高,则说明干燥不充分,需要调整干燥温度、时间等参数,进一步降低原料粉末中的水分含量。Regularly check the content of hydrochlorosilane in the product silicon tetrachloride. If the content of the hydrochlorosilane is high, the drying is insufficient, and parameters such as drying temperature and time need to be adjusted to further reduce the moisture content in the raw material powder.
干燥后的SiO2粉末和碳粉按SiO2与碳的摩尔比为1∶2-1∶4的比例均匀混合,优选摩尔比为1∶2-1∶3,更优选1∶2.5。碳粉的含量可以稍微过量,以使反应更加充分。The dried SiO 2 powder and the carbon powder are uniformly mixed in a molar ratio of SiO 2 to carbon of from 1:2 to 1:4, preferably in a molar ratio of from 1:2 to 1:3, more preferably 1:2.5. The amount of toner can be slightly excessive to make the reaction more complete.
反应炉Reaction furnace
根据本发明的四氯化硅生产方法中使用的反应炉优选沸腾床。沸腾床的使用可以增加 氯气与混合料之间的接触面积,提高生产强度,同时流动的粉末也容易加入或取出而不影响反应的进行,从而使反应连续进行。在本发明中,向反应炉中加入混合的SiO2粉末和碳粉,然后从反应炉底部通入氯气,使所述粉末始终保持在沸腾形式。The reactor used in the silicon tetrachloride production method according to the present invention is preferably a bubbling bed. The use of the ebullating bed can increase the contact area between the chlorine gas and the mixture, increase the production strength, and the flowing powder can be easily added or taken out without affecting the progress of the reaction, thereby allowing the reaction to proceed continuously. In the present invention, mixed SiO 2 powder and carbon powder are added to the reaction furnace, and then chlorine gas is introduced from the bottom of the reaction furnace to keep the powder in a boiling form at all times.
控制反应炉的温度为800-1800℃,优选1000-1500℃,例如1050℃、1100℃、1150℃、1200℃、1250℃、1300℃、1350℃、1400℃、1450℃或1500℃。控制通入氯气的空床流速为0.005-0.05m/s,优选0.01-0.03m/s。流速过低,反应效率低,不经济。流量过高,将混合料带走,影响产量。The temperature of the reaction furnace is controlled to be 800-1800 ° C, preferably 1000-1500 ° C, such as 1050 ° C, 1100 ° C, 1150 ° C, 1200 ° C, 1250 ° C, 1300 ° C, 1350 ° C, 1400 ° C, 1450 ° C or 1500 ° C. The empty bed flow rate for controlling the introduction of chlorine gas is from 0.005 to 0.05 m/s, preferably from 0.01 to 0.03 m/s. The flow rate is too low, the reaction efficiency is low, and it is not economical. The flow rate is too high, and the mixture is taken away, which affects the output.
在本发明中,干燥的SiO2粉末和碳粉直接参与反应炉中的氯化反应而不需要经过造粒过程,从而避免引入其他杂质。In the present invention, the dried SiO 2 powder and the carbon powder directly participate in the chlorination reaction in the reaction furnace without undergoing a granulation process, thereby avoiding the introduction of other impurities.
产物product
根据本发明方法生产的四氯化硅产量较大,纯度较高。所得四氯化硅产品的纯度大于90%,优选大于91%、92%、93%、94%、95%、96%、97%、98%或99%。特别地,根据本发明方法生产的四氯化硅产品不含SiH2Cl2、SiHCl3等含氢氯硅烷。由于在本发明的方法中,SiO2粉末和碳粉在混合前进行干燥,除去水分,从而避免在反应系统中引入氢元素,使得终产物四氯化硅中不含SiH2Cl2、SiHCl3等含氢氯硅烷。这提高了四氯化硅的纯度,同时也在一定程度上降低了后续的四氯化硅纯化的难度和成本。The silicon tetrachloride produced according to the method of the present invention has a large yield and a high purity. The resulting silicon tetrachloride product has a purity greater than 90%, preferably greater than 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98% or 99%. In particular, the silicon tetrachloride product produced according to the process of the invention does not contain hydrochlorosilanes such as SiH 2 Cl 2 , SiHCl 3 and the like. Since in the method of the present invention, the SiO 2 powder and the carbon powder are dried before mixing to remove moisture, thereby avoiding introduction of hydrogen into the reaction system, so that the final product silicon tetrachloride does not contain SiH 2 Cl 2 or SiHCl 3 . Hydrochlorosilane. This increases the purity of the silicon tetrachloride and also reduces the difficulty and cost of subsequent silicon tetrachloride purification to some extent.
实施例Example
为了进一步理解本发明,下面结合实施例对本发明提供的工业化生产四氯化硅的方法进行说明。本发明的保护范围不受以下实施例的任何限制。In order to further understand the present invention, a method for industrially producing silicon tetrachloride provided by the present invention will be described below with reference to the examples. The scope of protection of the present invention is not limited by the following examples.
实施例1Example 1
将商购的硅砂(二氧化硅含量大于95%)、焦炭分别磨制成粒径为约100目的硅砂粉、碳粉,使用干燥设备将所述粉末干燥至含水量小于1%重量,按硅砂∶碳粉=1∶2.5(摩尔比)比例均匀混合后得到固体混合料。以连续的方式将混合料和氯气分别加入到反应炉中,其中以空床流速0.03m/s对氯气加入量进行控制,使反应炉的混合料保持在沸腾床形式。将反应炉温度控制在约1450℃,高温下氯气和混合料在反应炉中经过气固合成反应连续生产得到四氯化硅气体,用收集系统收集得到四氯化硅凝液。经测定,四氯化硅平均纯度为约95%,氯气转化率为93%,并且未检测出SiH2Cl2、SiHCl3等含氢氯硅烷。 The commercially available silica sand (silica content greater than 95%) and coke are separately ground to a silica sand powder and carbon powder having a particle diameter of about 100 mesh, and the powder is dried to a water content of less than 1% by weight using a drying device, according to silica sand. : The mixture of carbon powder = 1:2.5 (molar ratio) was uniformly mixed to obtain a solid mixture. The mixture and chlorine were separately fed to the reactor in a continuous manner, wherein the amount of chlorine added was controlled at an empty bed flow rate of 0.03 m/s to maintain the mixture of the reactor in the form of a bubbling bed. The temperature of the reaction furnace was controlled at about 1450 ° C. The chlorine gas and the mixture were continuously produced in a gas-solid synthesis reaction in a reaction furnace at a high temperature to obtain silicon tetrachloride gas, and collected by a collection system to obtain a silicon tetrachloride condensate. The average purity of silicon tetrachloride was determined to be about 95%, the chlorine gas conversion rate was 93%, and hydrochlorosilanes such as SiH 2 Cl 2 and SiHCl 3 were not detected.
实施例2Example 2
将商购的硅石(二氧化硅含量大于95%)、精煤分别磨制成粒径为约300目的硅石粉、碳粉,使用干燥设备将所述粉末干燥至含水量小于1%重量,按硅石砂∶碳粉=1∶3(摩尔比)的比例均匀混合后得到固体混合料。以连续的方式分别将混合料和氯气加入到反应炉中,其中以约0.03m/s的空床流速加入氯气,使反应炉的混合料保持在沸腾床形式。将反应炉温度控制在约1050℃,高温下氯气和混合料在反应炉中经过气固合成反应连续生产得到四氯化硅气体,用收集系统收集得到四氯化硅凝液。经测定,四氯化硅平均纯度为约90%,氯气转化率为88%,并且未检测出SiH2Cl2、SiHCl3等含氢氯硅烷。The commercially available silica (silica content greater than 95%) and the clean coal are respectively ground into silica powder and carbon powder having a particle diameter of about 300 mesh, and the powder is dried to a water content of less than 1% by using a drying device. A ratio of silica sand:carbon powder = 1:3 (molar ratio) was uniformly mixed to obtain a solid mixture. The mixture and chlorine were separately fed to the reactor in a continuous manner, wherein chlorine gas was added at an empty bed flow rate of about 0.03 m/s to maintain the mixture of the reactor in an ebullated bed form. The temperature of the reaction furnace is controlled to about 1050 ° C. At a high temperature, the chlorine gas and the mixture are continuously produced by a gas-solid synthesis reaction in a reaction furnace to obtain silicon tetrachloride gas, and a silicon tetrachloride condensate is collected by a collecting system. It was determined that the average purity of silicon tetrachloride was about 90%, the conversion ratio of chlorine gas was 88%, and hydrochlorosilane such as SiH 2 Cl 2 or SiHCl 3 was not detected.
实施例3Example 3
将商购的石英砂(二氧化硅含量大于97%)、冶金焦分别磨制成粒径为约150目的石英砂粉、碳粉,使用干燥设备将所述粉末干燥至含水量小于1%重量,按石英砂:碳粉=1:3(摩尔比)的比例均匀混合后得到固体混合料。以连续的方式分别将混合料和氯气加入到反应炉中,其中以约0.03m/s的空床流速加入氯气,使反应炉的混合料保持在沸腾床形式。将反应炉温度控制在约1150℃,高温下氯气和混合料在反应炉中经过气固合成反应连续生产得到四氯化硅气体,用收集系统收集得到四氯化硅凝液。经测定,四氯化硅平均纯度为约95%,氯气转化率为90%,并且未检测出SiH2Cl2、SiHCl3等含氢氯硅烷。The commercially available quartz sand (silica content greater than 97%) and metallurgical coke are respectively ground into quartz sand powder and carbon powder having a particle diameter of about 150 mesh, and the powder is dried to a water content of less than 1% by using a drying device. The mixture was uniformly mixed according to the ratio of quartz sand: carbon powder = 1:3 (molar ratio) to obtain a solid mixture. The mixture and chlorine were separately fed to the reactor in a continuous manner, wherein chlorine gas was added at an empty bed flow rate of about 0.03 m/s to maintain the mixture of the reactor in an ebullated bed form. The temperature of the reaction furnace is controlled at about 1150 ° C. At a high temperature, the chlorine gas and the mixture are continuously produced in a gas-solid synthesis reaction in a reaction furnace to obtain silicon tetrachloride gas, and the silicon tetrachloride condensate is collected by a collecting system. The average purity of silicon tetrachloride was determined to be about 95%, the chlorine gas conversion rate was 90%, and hydrochlorosilanes such as SiH 2 Cl 2 and SiHCl 3 were not detected.
实施例4Example 4
将商购的方石英(二氧化硅含量大于97%)、石墨粉分别磨制成粒径为约200目的方石英粉、碳粉,使用干燥设备将所述粉末干燥至含水量小于0.8%重量,按方石英∶碳粉=1∶2.5(摩尔比)的比例均匀混合后得到固体混合料。以连续的方式分别将混合料和氯气加入到反应炉中,其中以约0.05m/s的空床流速加入氯气,使反应炉的混合料保持在沸腾床形式。将反应炉温度控制在约1350℃,高温下氯气和混合料在反应炉中经过气固合成反应连续生产得到四氯化硅气体,用收集系统收集得到四氯化硅凝液。经测定,四氯化硅平均纯度为约95%,氯气转化率为92%,并且未检测出SiH2Cl2、SiHCl3等含氢氯硅烷。The commercially available cristobalite (silica content greater than 97%) and the graphite powder are separately ground to form a square quartz powder and carbon powder having a particle diameter of about 200 mesh, and the powder is dried to a water content of less than 0.8% by using a drying device. The mixture was uniformly mixed in a ratio of cristobalite:carbon powder = 1:2.5 (molar ratio) to obtain a solid mixture. The mixture and chlorine were separately fed to the reactor in a continuous manner, wherein chlorine gas was added at an empty bed flow rate of about 0.05 m/s to maintain the mixture of the reactor in an ebullated bed form. The temperature of the reaction furnace is controlled at about 1350 ° C. The chlorine gas and the mixture are continuously produced by a gas-solid synthesis reaction in a reaction furnace at a high temperature to obtain silicon tetrachloride gas, and a silicon tetrachloride condensate is collected by a collecting system. The average purity of silicon tetrachloride was determined to be about 95%, the chlorine gas conversion rate was 92%, and hydrochlorosilanes such as SiH 2 Cl 2 and SiHCl 3 were not detected.
实施例5Example 5
将商购的鳞石英(二氧化硅含量大于96%)、木炭分别磨制成粒径为约170目的鳞石英粉、碳粉,使用干燥设备将所述粉末干燥至含水量小于0.5%重量,按鳞石英∶碳粉=1∶3(摩尔比)的比例均匀混合后得到固体混合料。以连续的方式分别将混合料和氯气加入到反应炉中,其中以约0.04m/s的空床流速加入氯气,使反应炉的混合料保持在沸腾床形式。将 反应炉温度控制在约1200℃,高温下氯气和混合料在反应炉中经过气固合成反应连续生产得到四氯化硅气体,用收集系统收集得到四氯化硅凝液。经测定,四氯化硅平均纯度为约96%,氯气转化率为90%,并且未检测出SiH2Cl2、SiHCl3等含氢氯硅烷。Commercially available scaly quartz (silica content greater than 96%) and charcoal were separately ground to form quartz silica powder and carbon powder having a particle size of about 170 mesh, and the powder was dried to a water content of less than 0.5% by weight using a drying apparatus. The mixture was uniformly mixed in a ratio of tridymite:carbon powder = 1:3 (molar ratio) to obtain a solid mixture. The mixture and chlorine gas were separately fed to the reactor in a continuous manner, wherein chlorine gas was added at an empty bed flow rate of about 0.04 m/s to maintain the mixture of the reactor in an ebullated bed form. The temperature of the reaction furnace was controlled at about 1200 ° C. The chlorine gas and the mixed material were continuously produced by a gas-solid synthesis reaction in a reaction furnace at a high temperature to obtain silicon tetrachloride gas, and a silicon tetrachloride condensate was collected by a collecting system. The average purity of silicon tetrachloride was determined to be about 96%, the conversion of chlorine gas was 90%, and hydrochlorosilane such as SiH 2 Cl 2 or SiHCl 3 was not detected.
实施例6Example 6
将商购的硅石(二氧化硅含量大于98%)、活性炭分别磨制成粒径为约230目的硅石粉、碳粉,使用干燥设备将所述粉末干燥至含水量小于0.6%重量,按硅石∶碳粉=1∶3(摩尔比)的比例均匀混合后得到固体混合料。以连续的方式分别将混合料和氯气加入到反应炉中,其中以约0.02m/s的空床流速加入氯气,使反应炉的混合料保持在沸腾床形式。将反应炉温度控制在约1350℃,高温下氯气和混合料在反应炉中经过气固合成反应连续生产得到四氯化硅气体,用收集系统收集得到四氯化硅凝液。经测定,四氯化硅平均纯度为约98%,氯气转化率为92%,并且未检测出SiH2Cl2、SiHCl3等含氢氯硅烷。The commercially available silica (silica content greater than 98%) and activated carbon are separately ground to a silica powder having a particle size of about 230 mesh, carbon powder, and the powder is dried to a water content of less than 0.6% by weight using a drying apparatus, and silica is used. A ratio of carbon powder = 1:3 (molar ratio) was uniformly mixed to obtain a solid mixture. The mixture and chlorine were separately fed to the reactor in a continuous manner, wherein chlorine gas was added at an empty bed flow rate of about 0.02 m/s to maintain the mixture of the reactor in an ebullated bed form. The temperature of the reaction furnace is controlled at about 1350 ° C. The chlorine gas and the mixture are continuously produced by a gas-solid synthesis reaction in a reaction furnace at a high temperature to obtain silicon tetrachloride gas, and a silicon tetrachloride condensate is collected by a collecting system. The average purity of silicon tetrachloride was determined to be about 98%, the chlorine gas conversion rate was 92%, and hydrochlorosilanes such as SiH 2 Cl 2 and SiHCl 3 were not detected.
比较例1Comparative example 1
将商购的硅砂(二氧化硅含量大于95%)、焦炭分别磨制成粒径为约150目的硅砂粉、碳粉,按硅砂∶碳粉=1∶2.5(摩尔比)比例均匀混合后得到固体混合料,不对所得的硅砂粉末和碳粉进行干燥。以连续的方式将混合料和氯气分别加入到反应炉中,其中以空床流速0.03m/s对氯气加入量进行控制,使反应炉的混合料保持在沸腾床形式。将反应炉温度控制在约1350℃,高温下氯气和混合料在反应炉中经过气固合成反应连续生产得到四氯化硅气体,用收集系统收集得到四氯化硅凝液。经测定,四氯化硅平均纯度为约93%,氯气转化率为94%,并且检测出SiH2Cl2、SiHCl3等含氢氯硅烷约0.7%。Commercially available silica sand (silica content greater than 95%) and coke were separately ground to a silica sand powder and carbon powder having a particle size of about 150 mesh, and uniformly mixed according to the ratio of silica sand: carbon powder = 1:2.5 (molar ratio). The solid mixture is not dried by the obtained silica sand powder and carbon powder. The mixture and chlorine were separately fed to the reactor in a continuous manner, wherein the amount of chlorine added was controlled at an empty bed flow rate of 0.03 m/s to maintain the mixture of the reactor in the form of a bubbling bed. The temperature of the reaction furnace is controlled at about 1350 ° C. The chlorine gas and the mixture are continuously produced by a gas-solid synthesis reaction in a reaction furnace at a high temperature to obtain silicon tetrachloride gas, and a silicon tetrachloride condensate is collected by a collecting system. The average purity of silicon tetrachloride was determined to be about 93%, the chlorine gas conversion rate was 94%, and about 0.7% of hydrochlorosilanes such as SiH 2 Cl 2 and SiHCl 3 were detected.
分别以上所述仅为本申请的优选实施例而已,并不用于限制本申请,对于本领域的技术人员来说,本申请可以有各种更改和变化。凡在本申请的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本申请的保护范围之内。 The above description is only for the preferred embodiment of the present application, and is not intended to limit the present application, and various changes and modifications may be made by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of this application are intended to be included within the scope of the present application.

Claims (14)

  1. 一种生产四氯化硅的方法,包括以下步骤:A method of producing silicon tetrachloride, comprising the steps of:
    使干燥的SiO2粉末和含碳物质碳粉混合料与氯气进行氯化反应,得到四氯化硅产品。The dried SiO 2 powder and the carbonaceous material carbon powder mixture are chlorinated with chlorine gas to obtain a silicon tetrachloride product.
  2. 一种生产四氯化硅的方法,包括以下步骤:A method of producing silicon tetrachloride, comprising the steps of:
    将SiO2粉末和含碳物质碳粉进行干燥;以及Drying the SiO 2 powder and the carbonaceous carbon powder;
    将干燥的SiO2粉末和含碳物质碳粉与氯气连续加入到反应炉中,在800-1800℃的温度下反应,得到四氯化硅产品。The dried SiO 2 powder and the carbonaceous material carbon powder and chlorine gas are continuously fed to a reaction furnace, and reacted at a temperature of 800 to 1800 ° C to obtain a silicon tetrachloride product.
  3. 一种生产四氯化硅的方法,其中所述方法包含以下连续步骤:A method of producing silicon tetrachloride, wherein the method comprises the following sequential steps:
    a.分别研磨含SiO2的物质和含碳物质,得到SiO2粉末和碳粉;a. separately grinding the substance containing SiO 2 and the carbonaceous substance to obtain SiO 2 powder and carbon powder;
    b.将所述SiO2粉末和碳粉进行干燥;b. drying the SiO 2 powder and carbon powder;
    c.将所干燥的SiO2粉末和碳粉均匀混合,得到混合料;和c. uniformly mixing the dried SiO 2 powder and the carbon powder to obtain a mixture;
    d.将所述混合料与氯气加入到反应炉中,在800-1800℃的温度下进行氯化反应,得到四氯化硅产品。d. The mixture and chlorine gas are added to the reaction furnace, and chlorination is carried out at a temperature of 800 to 1800 ° C to obtain a silicon tetrachloride product.
  4. 如权利要求1至3中任一项所述的方法,其中所述SiO2粉末或所述含SiO2的物质是SiO2含量高于90%、优选高于91%、92%、93%、94%、95%、96%、97%、98%或99%的矿物原料。The method according to any one of claims 1 to 3, wherein the SiO 2 powder or the SiO 2 -containing material has a SiO 2 content of more than 90%, preferably more than 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98% or 99% of mineral raw materials.
  5. 如权利要求至3中任一项所述的方法,其中所述SiO2粉末或所述含SiO2的物质选自天然硅砂、硅石、石英砂、鳞石英和方石英中的至少一种。The method according to any one of claims 3 to 3, wherein the SiO 2 powder or the SiO 2 -containing substance is at least one selected from the group consisting of natural silica sand, silica, quartz sand, tridymite, and cristobalite.
  6. 如权利要求1至3中任一项所述的方法,其中所述含碳物质选自冶金焦、石墨粉、精煤、活性炭、木炭、炭黑、无烟碳、和焦碳中的至少一种。The method according to any one of claims 1 to 3, wherein the carbonaceous material is at least one selected from the group consisting of metallurgical coke, graphite powder, clean coal, activated carbon, charcoal, carbon black, smokeless carbon, and coke. Kind.
  7. 如权利要求1至3中任一项所述的方法,其中所述SiO2粉末和碳粉的粒径为100至300目。The method according to any one of claims 1 to 3, wherein the SiO 2 powder and the carbon powder have a particle diameter of 100 to 300 mesh.
  8. 如权利要求1至3中任一项所述的方法,其中干燥之后SiO2粉末和碳粉的含水量分别低于1%重量,优选低于0.8%重量,更优选低于0.5%重量。The method according to any one of claims 1 to 3, wherein the water content of the SiO 2 powder and the carbon powder after drying is less than 1% by weight, preferably less than 0.8% by weight, more preferably less than 0.5% by weight.
  9. 如权利要求1至3中任一项所述的方法,其中将干燥的SiO2粉末和碳粉按SiO2与碳的摩尔比为1∶2-1∶4的比例均匀混合,优选摩尔比为1∶2-1∶3,更优选1∶2.5。The method according to any one of claims 1 to 3, wherein the dried SiO 2 powder and the carbon powder are uniformly mixed in a molar ratio of SiO 2 to carbon of from 1:2 to 1:4 , preferably in a molar ratio of 1:2 to 1:3, more preferably 1:2.5.
  10. 如权利要求1至3中任一项所述的方法,其中所述反应炉是直径大于1m的沸腾床。The method according to any one of claims 1 to 3, wherein the reaction furnace is an ebullated bed having a diameter greater than 1 m.
  11. 如权利要求1至3中任一项所述的方法,其特征在于其中所述氯气以0.005~0.05m/s,优选0.01-0.03m/s的空床流速加入反应炉中。The method according to any one of claims 1 to 3, wherein the chlorine gas is fed into the reaction furnace at an empty bed flow rate of 0.005 to 0.05 m/s, preferably 0.01 to 0.03 m/s.
  12. 如权利要求1至3中任一项所述的方法,其特征在于所述反应过程中不使用催化剂。The method according to any one of claims 1 to 3, characterized in that no catalyst is used during the reaction.
  13. 如权利要求1至3中任一项所述的方法,其特征在于所述得到的四氯化硅产品中不合氢氯硅烷。The method according to any one of claims 1 to 3, characterized in that the obtained silicon tetrachloride product does not contain hydrochlorosilane.
  14. 如权利要求1至3中任一项所述的方法,其特征在于所述四氯化硅产品的纯度大 于90%,优选大于91%、92%、93%、94%、95%、96%、97%、98%或99%。 The method according to any one of claims 1 to 3, characterized in that the silicon tetrachloride product has a high purity At 90%, preferably greater than 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98% or 99%.
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