CN100402423C - Rapid sintering method for sintering product of silicon carbide in normal pressure - Google Patents

Rapid sintering method for sintering product of silicon carbide in normal pressure Download PDF

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Publication number
CN100402423C
CN100402423C CNB2006101070026A CN200610107002A CN100402423C CN 100402423 C CN100402423 C CN 100402423C CN B2006101070026 A CNB2006101070026 A CN B2006101070026A CN 200610107002 A CN200610107002 A CN 200610107002A CN 100402423 C CN100402423 C CN 100402423C
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sintering
silicon carbide
minute
temperature
rate
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CN1915810A (en
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蔡鸣
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Shanghai ASUS fine ceramic Limited by Share Ltd
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HUASHUO PRECISION CERAMIC CO Ltd ZHENGZHOU
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency

Abstract

This invention discloses a method for rapidly sintering SiC products under normal pressure. The method comprises: (1) heating at a rate of 12-15 deg.C/min before reaching 900 deg.C regardless of the sizes and shapes of SiC products; (2) heating at a rate of 15-18 deg.C to 1600 deg.C when the temperature is above 900 deg.C, and keeping the temperature for 0-5 min; (3) heating at a rate of 8-10 deg.C to 2300 deg.C, and keeping the temperature for 25-30 min. The average density of the obtained products is 3.10-3.15 g/cm3. The sintering of per furnace SiC products can be achieved within 4-6 h. The molding aids in SiC products can be decomposed and volatilized below 800 deg.C, and the residues are N and C, thus can largely improve the quality of sintered SiC products, and achieve the goal of energy-saving and high-efficiency sintering of SiC products under normal pressure.

Description

The Fast Sintering method of constant pressure sintering silicon carbide products
Technical field
The present invention relates to the sintering method of silicon carbide articles, especially relate to the Fast Sintering method of constant pressure sintering silicon carbide products.
Background technology
Constant pressure sintering silicon carbide is with its excellent high strength, high rigidity, and high temperature resistant, wear-resistant, corrosion resistance nature is widely used among the modern industry production every field.Correlation theory studies show that normal pressure-sintered Sic burns till, and under the assurance of powder that conforms with specification of quality and forming technique, its sintering technology shows as (1), must reach firing temperature 2200-2500 ℃ of normal pressure-sintered Sic; (2), necessary sintering curre reasonable in design; (3) must under protective atmosphere, carry out sintering.But in normal pressure-sintered Sic sintering theory and SINTERING PRODUCTION technical information, the final firing time of normal pressure-sintered Sic is not all had in detail and unified standard.As U.S. Carborundum company introduction from 4 to 100 hours.Domestic correlative study data then shows general need 12-18 hour.In actual production, the length of final firing time plays crucial effects to the cost control of product, the raising and the controllable quality of production unit efficient.How in the shortest time, burning the product that to conform with quality standard, is threshold extensive, that the normal pressure-sintered Sic product of suitability for industrialized production can not be walked around.
Summary of the invention
The object of the invention is to provide the Fast Sintering method of the constant pressure sintering silicon carbide products that a kind of sintering cost is low, production efficiency is high.
For achieving the above object, the present invention can take following technical proposals:
The Fast Sintering method of constant pressure sintering silicon carbide products of the present invention,
A, for the height more than 10mm, internal diameter 10-70mm, density is at 1.87g/cm 3-1.89g/cm 3Green compact moulding silicon carbide articles, be lower than before 800 ℃ in temperature and adopt 8 ℃-10 ℃/minute heat-up rate;
B, for the height below 10mm, internal diameter is at 80mm-200mm, density is at 1.87g/cm 3-1.89g/cm 3Green compact moulding silicon carbide articles, be lower than before 800 ℃ the heat-up rate control of adopting 5 ℃/minute in temperature;
C, for single-piece with the powder amount between 1kg-20kg, density is at 1.87g/cm 3-1.89g/cm 3Green compact moulding silicon carbide articles, be lower than before 800 ℃ in temperature and adopt 5 ℃-6 ℃/minute heat-up rate;
D, in above-mentioned green compact moulding silicon carbide articles sintering process, when being warming up to 800 ℃, heat-up rate rises to 9 ℃-10 ℃/minute, when furnace temperature rises to 1500 ℃, be incubated 18-20 minute, then rise to 2300 ℃ fast, be incubated 25-30 minute, sintering is finished, and the product density that obtains is on average at 3.10-3.15g/cm 3Between.
According to sintering method of the present invention, the silicon carbide articles sintering time of every stove can be finished at 4-6 hour, guaranteed quality product simultaneously, neither burning, underburnt not, and product density is on average at 3.10-3.15g/cm 3Between.Shaping assistant in the green compact moulding silicon carbide articles all decomposes volatilization before 800 ℃, its residual volume is nitrogen, carbon, has improved greatly and has burnt till final product quality; The heat-up rate of science, make other macromolecular materials such as shaping assistant in the green compact moulding silicon carbide articles, sintering aid, demolding aids in sintering process, decompose, volatilize with different temperature separately, both avoided because the too fast infringement that causes blank that heats up, as crack etc., shorten firing time again, greatly reduced the energy-output ratio in the sintering procedure, reached the purpose of efficient energy-saving constant pressure sintering silicon carbide products.
Embodiment
The Fast Sintering method of constant pressure sintering silicon carbide products of the present invention, A, for the height more than 10mm, internal diameter 10-70mm, density is at 1.87g/cm 3-1.89g/cm 3Green compact moulding silicon carbide articles, be lower than before 800 ℃ in temperature and adopt 8 ℃-10 ℃/minute heat-up rate;
B, for the height below 10mm, internal diameter is at 80mm-200mm, density is at 1.87g/cm 3-1.89g/cm 3Green compact moulding silicon carbide articles, be lower than before 800 ℃ the heat-up rate control of adopting 5 ℃/minute in temperature;
C, for single-piece with the powder amount between 1kg-20kg, density is at 1.87g/cm 3-1.89g/cm 3Green compact moulding silicon carbide articles, be lower than before 800 ℃ in temperature and adopt 5 ℃-6 ℃/minute heat-up rate;
D, in above-mentioned green compact moulding silicon carbide articles sintering process, when being warming up to 800 ℃, heat-up rate rises to 9 ℃-10 ℃/minute, when furnace temperature rises to 1500 ℃, be incubated 18-20 minute, then rise to 2300 ℃ fast, be incubated 25-30 minute, sintering is finished, and the product density that obtains is on average at 3.10-3.15g/cm 3Between.

Claims (1)

1. the Fast Sintering method of a constant pressure sintering silicon carbide products is characterized in that:
A, for the height more than 10mm, internal diameter 10-70mm, density is at 1.87g/cm 3-1.89g/cm 3Green compact moulding silicon carbide articles, be lower than before 800 ℃ in temperature and adopt 8 ℃-10 ℃/minute heat-up rate;
B, for the height below 10mm, internal diameter is at 80mm-200mm, density is at 1.87g/cm 3-1.89g/cm 3Green compact moulding silicon carbide articles, be lower than before 800 ℃ the heat-up rate control of adopting 5 ℃/minute in temperature;
C, for single-piece with the powder amount between 1kg-20kg, density is at 1.87g/cm 3-1.89g/cm 3Green compact moulding silicon carbide articles, be lower than before 800 ℃ in temperature and adopt 5 ℃-6 ℃/minute heat-up rate;
D, in above-mentioned green compact moulding silicon carbide articles sintering process, when being warming up to 800 ℃, heat-up rate rises to 9 ℃-10 ℃/minute, when furnace temperature rises to 1500 ℃, be incubated 18-20 minute, then rise to 2300 ℃ fast, be incubated 25-30 minute, sintering is finished, and the product density that obtains is on average at 3.10-3.15g/cm 3Between.
CNB2006101070026A 2006-09-07 2006-09-07 Rapid sintering method for sintering product of silicon carbide in normal pressure Active CN100402423C (en)

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CNB2006101070026A CN100402423C (en) 2006-09-07 2006-09-07 Rapid sintering method for sintering product of silicon carbide in normal pressure

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CNB2006101070026A CN100402423C (en) 2006-09-07 2006-09-07 Rapid sintering method for sintering product of silicon carbide in normal pressure

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CN100402423C true CN100402423C (en) 2008-07-16

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CN105294116A (en) * 2015-07-07 2016-02-03 洛阳名力科技开发有限公司 Liquid-state sintering anti-sticking method for silicon carbide ceramics

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57175718A (en) * 1981-04-20 1982-10-28 Hitachi Ltd Preparation of silicon carbide fine powder
CN1061552A (en) * 1990-11-17 1992-06-03 国营苏北砂轮厂 The manufacture method of silicon carbide grinding wheel
CN1264687A (en) * 2000-03-15 2000-08-30 武汉工业大学 One-step process for preparing reactive sintered ceramic material of silicon carbonate from pure carbon powder dispersed in water base
CN1807356A (en) * 2006-01-28 2006-07-26 黄黎敏 Method for preparing high purity silicon carbide honeycomb ceramic body using nanometer silicon carbide as sintering adjuvant

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57175718A (en) * 1981-04-20 1982-10-28 Hitachi Ltd Preparation of silicon carbide fine powder
CN1061552A (en) * 1990-11-17 1992-06-03 国营苏北砂轮厂 The manufacture method of silicon carbide grinding wheel
CN1264687A (en) * 2000-03-15 2000-08-30 武汉工业大学 One-step process for preparing reactive sintered ceramic material of silicon carbonate from pure carbon powder dispersed in water base
CN1807356A (en) * 2006-01-28 2006-07-26 黄黎敏 Method for preparing high purity silicon carbide honeycomb ceramic body using nanometer silicon carbide as sintering adjuvant

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
常压烧结SiC陶瓷的研究. 龚亦农，徐洁等.江苏陶瓷，第34卷第1期. 2001
常压烧结SiC陶瓷的研究. 龚亦农，徐洁等.江苏陶瓷，第34卷第1期. 2001 *

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