JPS56135926A - Cell for source of molecular beam - Google Patents
Cell for source of molecular beamInfo
- Publication number
- JPS56135926A JPS56135926A JP3928780A JP3928780A JPS56135926A JP S56135926 A JPS56135926 A JP S56135926A JP 3928780 A JP3928780 A JP 3928780A JP 3928780 A JP3928780 A JP 3928780A JP S56135926 A JPS56135926 A JP S56135926A
- Authority
- JP
- Japan
- Prior art keywords
- molecular
- cell
- source
- beams
- molecular beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To generate molecular beams having high efficiency and excellent uniformity by providing a molecular-beam diffusing body inside the cell for the source of molecular beams and near the molecular-beam jetting-out port. CONSTITUTION:The stick-shaped molecular-beam diffusing body 6 is provided inside the cell 1 for the source of molecular beams formed of graphite of high purity or the like and having the molecular-beam jetting-out port 1a with a diameter (d) and the cell is covered with a heater, while a thermocouple 4 is arranged. By this constitution, the molecular beams are made to reach a substrate in a more uniform manner and thereby the distribution of thickness of a formed film turns uniform. In addition, since a large distance between the substrate and the cell becomes unnecessary, the epitaxy of the molecular beams of high efficiency becomes possible.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55039287A JPS58175B2 (en) | 1980-03-27 | 1980-03-27 | Cell for molecular beam source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55039287A JPS58175B2 (en) | 1980-03-27 | 1980-03-27 | Cell for molecular beam source |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56135926A true JPS56135926A (en) | 1981-10-23 |
JPS58175B2 JPS58175B2 (en) | 1983-01-05 |
Family
ID=12548935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55039287A Expired JPS58175B2 (en) | 1980-03-27 | 1980-03-27 | Cell for molecular beam source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58175B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52140766U (en) * | 1976-04-20 | 1977-10-25 | ||
JPS54162454A (en) * | 1978-06-14 | 1979-12-24 | Fujitsu Ltd | Molecular beam generating unit |
-
1980
- 1980-03-27 JP JP55039287A patent/JPS58175B2/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52140766U (en) * | 1976-04-20 | 1977-10-25 | ||
JPS54162454A (en) * | 1978-06-14 | 1979-12-24 | Fujitsu Ltd | Molecular beam generating unit |
Also Published As
Publication number | Publication date |
---|---|
JPS58175B2 (en) | 1983-01-05 |
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