JPS5730321A - Molecular beam source for molecular beam epitaxy - Google Patents

Molecular beam source for molecular beam epitaxy

Info

Publication number
JPS5730321A
JPS5730321A JP10414780A JP10414780A JPS5730321A JP S5730321 A JPS5730321 A JP S5730321A JP 10414780 A JP10414780 A JP 10414780A JP 10414780 A JP10414780 A JP 10414780A JP S5730321 A JPS5730321 A JP S5730321A
Authority
JP
Japan
Prior art keywords
molecular beam
chamber
small
beam source
uniform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10414780A
Other languages
Japanese (ja)
Other versions
JPH0139205B2 (en
Inventor
Junji Saito
Sukehisa Hiyamizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10414780A priority Critical patent/JPS5730321A/en
Publication of JPS5730321A publication Critical patent/JPS5730321A/en
Publication of JPH0139205B2 publication Critical patent/JPH0139205B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain a uniform molecular beam and to form a thin film of equialized quality of a method wherein the inside of a molecular beam source cell is divided into plural small chambers, the material for formation of a molecular beam is molten and gasificated in the first chamber the molecular beam is heated again in the second chamber and moreover the molecular beam is transferred in the adjoining small chamber to be heated again. CONSTITUTION:The inside of the molecular beam source cell is divided into the small chambers 12, 13, 14 having the group of heaters 20, 21, 22. The molecular beam source material of Ga 23 is filled up in the first chamber 12, and when it is heated in a vacuum, Ga in the first small chamber is evaporated, transfers through small holes 17, 18 to the second and third coupled chambers to be heated again, and jumps out from a spouting hole 19 onto the substrate forming the uniform molecular beam of single molecule. Accordingly the uniform thin film can be formed having favorable reproducibility.
JP10414780A 1980-07-29 1980-07-29 Molecular beam source for molecular beam epitaxy Granted JPS5730321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10414780A JPS5730321A (en) 1980-07-29 1980-07-29 Molecular beam source for molecular beam epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10414780A JPS5730321A (en) 1980-07-29 1980-07-29 Molecular beam source for molecular beam epitaxy

Publications (2)

Publication Number Publication Date
JPS5730321A true JPS5730321A (en) 1982-02-18
JPH0139205B2 JPH0139205B2 (en) 1989-08-18

Family

ID=14372964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10414780A Granted JPS5730321A (en) 1980-07-29 1980-07-29 Molecular beam source for molecular beam epitaxy

Country Status (1)

Country Link
JP (1) JPS5730321A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62132313A (en) * 1984-10-24 1987-06-15 コンパニイ・ジエネラル・デレクトリシテ Molecular jet generator
JPH01278493A (en) * 1988-04-28 1989-11-08 Nec Corp Molecular beam generating device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52140766U (en) * 1976-04-20 1977-10-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52140766U (en) * 1976-04-20 1977-10-25

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62132313A (en) * 1984-10-24 1987-06-15 コンパニイ・ジエネラル・デレクトリシテ Molecular jet generator
JPH01278493A (en) * 1988-04-28 1989-11-08 Nec Corp Molecular beam generating device

Also Published As

Publication number Publication date
JPH0139205B2 (en) 1989-08-18

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