JPS6412522A - Semiconductor crystal epitaxy method - Google Patents
Semiconductor crystal epitaxy methodInfo
- Publication number
- JPS6412522A JPS6412522A JP16950487A JP16950487A JPS6412522A JP S6412522 A JPS6412522 A JP S6412522A JP 16950487 A JP16950487 A JP 16950487A JP 16950487 A JP16950487 A JP 16950487A JP S6412522 A JPS6412522 A JP S6412522A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- substrate
- gas
- nozzle
- semiconductor crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To perform the thin film growing process evenly in excellent coverage on a large spaced and uneven substrate in a molecular layer epitaxy by a method wherein a kind of material gas (a) is led into a crystal growing chamber in the direction from a nozzle to a substrate crystal. CONSTITUTION:A gas leading-in part 5 contains respective nozzles 11-13 in the same type arranged for a substrate crystal 3 in a crystal growing chamber 2. For example, the nozzle 11 is formed to equalize the lengths of gas jets 11d-11f and the conductance from a leading-in port 11g. Consequently, the innerfacial distribution of the gas fed to the substrate crystal 3 can be made uniform to assure the excellent crystal growing process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16950487A JP2717786B2 (en) | 1987-07-07 | 1987-07-07 | Semiconductor crystal epitaxial growth method and molecular layer epitaxy apparatus used in the method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16950487A JP2717786B2 (en) | 1987-07-07 | 1987-07-07 | Semiconductor crystal epitaxial growth method and molecular layer epitaxy apparatus used in the method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22969597A Division JP2934740B2 (en) | 1997-08-26 | 1997-08-26 | Equipment for epitaxial growth of semiconductor crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6412522A true JPS6412522A (en) | 1989-01-17 |
JP2717786B2 JP2717786B2 (en) | 1998-02-25 |
Family
ID=15887737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16950487A Expired - Fee Related JP2717786B2 (en) | 1987-07-07 | 1987-07-07 | Semiconductor crystal epitaxial growth method and molecular layer epitaxy apparatus used in the method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2717786B2 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0880955A2 (en) | 1997-05-29 | 1998-12-02 | Kao Corporation | Absorbent article |
JP2001102372A (en) * | 1999-07-27 | 2001-04-13 | Applied Materials Inc | Silicate glass loaded with stable fluorine and distribution of improved processing gas used for forming other film |
JP2002343723A (en) * | 2001-05-17 | 2002-11-29 | Sumitomo Chem Co Ltd | Semiconductor manufacturing equipment and method for manufacturing compound semiconductor |
JP2002353151A (en) * | 2001-05-30 | 2002-12-06 | Sumitomo Chem Co Ltd | Semiconductor manufacturing apparatus |
JP2003502878A (en) * | 1999-06-24 | 2003-01-21 | ナーハ ガジル、プラサード | Atomic layer chemical vapor deposition system |
JP2007089818A (en) * | 2005-09-28 | 2007-04-12 | Uni Charm Corp | Absorbent article |
JP2012524416A (en) * | 2009-04-20 | 2012-10-11 | アプライド マテリアルズ インコーポレイテッド | Quartz window having gas supply mechanism and processing apparatus including the quartz window |
JP2013050561A (en) * | 2011-08-31 | 2013-03-14 | Jx Nippon Mining & Metals Corp | ZnTe THIN FILM FOR TERAHERTZ BAND DEVICE AND MANUFACTURING METHOD THEREOF |
-
1987
- 1987-07-07 JP JP16950487A patent/JP2717786B2/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0880955A2 (en) | 1997-05-29 | 1998-12-02 | Kao Corporation | Absorbent article |
US6326525B1 (en) | 1997-05-29 | 2001-12-04 | Kao Corporation | Absorbent article with free edge portions |
JP2003502878A (en) * | 1999-06-24 | 2003-01-21 | ナーハ ガジル、プラサード | Atomic layer chemical vapor deposition system |
JP2001102372A (en) * | 1999-07-27 | 2001-04-13 | Applied Materials Inc | Silicate glass loaded with stable fluorine and distribution of improved processing gas used for forming other film |
JP2002343723A (en) * | 2001-05-17 | 2002-11-29 | Sumitomo Chem Co Ltd | Semiconductor manufacturing equipment and method for manufacturing compound semiconductor |
JP2002353151A (en) * | 2001-05-30 | 2002-12-06 | Sumitomo Chem Co Ltd | Semiconductor manufacturing apparatus |
JP2007089818A (en) * | 2005-09-28 | 2007-04-12 | Uni Charm Corp | Absorbent article |
JP2012524416A (en) * | 2009-04-20 | 2012-10-11 | アプライド マテリアルズ インコーポレイテッド | Quartz window having gas supply mechanism and processing apparatus including the quartz window |
JP2013050561A (en) * | 2011-08-31 | 2013-03-14 | Jx Nippon Mining & Metals Corp | ZnTe THIN FILM FOR TERAHERTZ BAND DEVICE AND MANUFACTURING METHOD THEREOF |
Also Published As
Publication number | Publication date |
---|---|
JP2717786B2 (en) | 1998-02-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |