JPS6412522A - Semiconductor crystal epitaxy method - Google Patents

Semiconductor crystal epitaxy method

Info

Publication number
JPS6412522A
JPS6412522A JP16950487A JP16950487A JPS6412522A JP S6412522 A JPS6412522 A JP S6412522A JP 16950487 A JP16950487 A JP 16950487A JP 16950487 A JP16950487 A JP 16950487A JP S6412522 A JPS6412522 A JP S6412522A
Authority
JP
Japan
Prior art keywords
crystal
substrate
gas
nozzle
semiconductor crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16950487A
Other languages
Japanese (ja)
Other versions
JP2717786B2 (en
Inventor
Junichi Nishizawa
Toru Kurabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Semiconductor Research Foundation
Original Assignee
Research Development Corp of Japan
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan, Semiconductor Research Foundation filed Critical Research Development Corp of Japan
Priority to JP16950487A priority Critical patent/JP2717786B2/en
Publication of JPS6412522A publication Critical patent/JPS6412522A/en
Application granted granted Critical
Publication of JP2717786B2 publication Critical patent/JP2717786B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To perform the thin film growing process evenly in excellent coverage on a large spaced and uneven substrate in a molecular layer epitaxy by a method wherein a kind of material gas (a) is led into a crystal growing chamber in the direction from a nozzle to a substrate crystal. CONSTITUTION:A gas leading-in part 5 contains respective nozzles 11-13 in the same type arranged for a substrate crystal 3 in a crystal growing chamber 2. For example, the nozzle 11 is formed to equalize the lengths of gas jets 11d-11f and the conductance from a leading-in port 11g. Consequently, the innerfacial distribution of the gas fed to the substrate crystal 3 can be made uniform to assure the excellent crystal growing process.
JP16950487A 1987-07-07 1987-07-07 Semiconductor crystal epitaxial growth method and molecular layer epitaxy apparatus used in the method Expired - Fee Related JP2717786B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16950487A JP2717786B2 (en) 1987-07-07 1987-07-07 Semiconductor crystal epitaxial growth method and molecular layer epitaxy apparatus used in the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16950487A JP2717786B2 (en) 1987-07-07 1987-07-07 Semiconductor crystal epitaxial growth method and molecular layer epitaxy apparatus used in the method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP22969597A Division JP2934740B2 (en) 1997-08-26 1997-08-26 Equipment for epitaxial growth of semiconductor crystals

Publications (2)

Publication Number Publication Date
JPS6412522A true JPS6412522A (en) 1989-01-17
JP2717786B2 JP2717786B2 (en) 1998-02-25

Family

ID=15887737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16950487A Expired - Fee Related JP2717786B2 (en) 1987-07-07 1987-07-07 Semiconductor crystal epitaxial growth method and molecular layer epitaxy apparatus used in the method

Country Status (1)

Country Link
JP (1) JP2717786B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0880955A2 (en) 1997-05-29 1998-12-02 Kao Corporation Absorbent article
JP2001102372A (en) * 1999-07-27 2001-04-13 Applied Materials Inc Silicate glass loaded with stable fluorine and distribution of improved processing gas used for forming other film
JP2002343723A (en) * 2001-05-17 2002-11-29 Sumitomo Chem Co Ltd Semiconductor manufacturing equipment and method for manufacturing compound semiconductor
JP2002353151A (en) * 2001-05-30 2002-12-06 Sumitomo Chem Co Ltd Semiconductor manufacturing apparatus
JP2003502878A (en) * 1999-06-24 2003-01-21 ナーハ ガジル、プラサード Atomic layer chemical vapor deposition system
JP2007089818A (en) * 2005-09-28 2007-04-12 Uni Charm Corp Absorbent article
JP2012524416A (en) * 2009-04-20 2012-10-11 アプライド マテリアルズ インコーポレイテッド Quartz window having gas supply mechanism and processing apparatus including the quartz window
JP2013050561A (en) * 2011-08-31 2013-03-14 Jx Nippon Mining & Metals Corp ZnTe THIN FILM FOR TERAHERTZ BAND DEVICE AND MANUFACTURING METHOD THEREOF

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0880955A2 (en) 1997-05-29 1998-12-02 Kao Corporation Absorbent article
US6326525B1 (en) 1997-05-29 2001-12-04 Kao Corporation Absorbent article with free edge portions
JP2003502878A (en) * 1999-06-24 2003-01-21 ナーハ ガジル、プラサード Atomic layer chemical vapor deposition system
JP2001102372A (en) * 1999-07-27 2001-04-13 Applied Materials Inc Silicate glass loaded with stable fluorine and distribution of improved processing gas used for forming other film
JP2002343723A (en) * 2001-05-17 2002-11-29 Sumitomo Chem Co Ltd Semiconductor manufacturing equipment and method for manufacturing compound semiconductor
JP2002353151A (en) * 2001-05-30 2002-12-06 Sumitomo Chem Co Ltd Semiconductor manufacturing apparatus
JP2007089818A (en) * 2005-09-28 2007-04-12 Uni Charm Corp Absorbent article
JP2012524416A (en) * 2009-04-20 2012-10-11 アプライド マテリアルズ インコーポレイテッド Quartz window having gas supply mechanism and processing apparatus including the quartz window
JP2013050561A (en) * 2011-08-31 2013-03-14 Jx Nippon Mining & Metals Corp ZnTe THIN FILM FOR TERAHERTZ BAND DEVICE AND MANUFACTURING METHOD THEREOF

Also Published As

Publication number Publication date
JP2717786B2 (en) 1998-02-25

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