JPS5619620A - Epitaxial growing method - Google Patents
Epitaxial growing methodInfo
- Publication number
- JPS5619620A JPS5619620A JP9560379A JP9560379A JPS5619620A JP S5619620 A JPS5619620 A JP S5619620A JP 9560379 A JP9560379 A JP 9560379A JP 9560379 A JP9560379 A JP 9560379A JP S5619620 A JPS5619620 A JP S5619620A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas flow
- reaction
- forcibly
- atmospheric pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/4551—Jet streams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To contrive the uniformity of the thickness and the specific resistance of an epitaxial layer by accelerating gas flow velocity flowing into a reaction chamber and retaining generally atmospheric pressure to forcibly equalize gas flow. CONSTITUTION:A semiconductor substrate is set in a reaction furnace having a narrow cross sectional area, the chamber is evacuated forcibly to enhance the reaction gas flow speed flowing thereinto so as to uniformly flow the gas necessary for epitaxial growth to any portions and to retain atmospheric pressure in the chamber for epitaxial growth. In this configuration, the thickness of the layer can be uniformly formed to equalize the specific resistance so as to eliminate the means for inclining susceptor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9560379A JPS5619620A (en) | 1979-07-26 | 1979-07-26 | Epitaxial growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9560379A JPS5619620A (en) | 1979-07-26 | 1979-07-26 | Epitaxial growing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5619620A true JPS5619620A (en) | 1981-02-24 |
Family
ID=14142120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9560379A Pending JPS5619620A (en) | 1979-07-26 | 1979-07-26 | Epitaxial growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5619620A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS509471A (en) * | 1973-05-21 | 1975-01-30 | ||
JPS5091254A (en) * | 1973-12-12 | 1975-07-21 | ||
JPS51107767A (en) * | 1975-03-19 | 1976-09-24 | Hitachi Ltd | HANDOTAIEPITAKISHARUSONO SEIZOHOHO |
-
1979
- 1979-07-26 JP JP9560379A patent/JPS5619620A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS509471A (en) * | 1973-05-21 | 1975-01-30 | ||
JPS5091254A (en) * | 1973-12-12 | 1975-07-21 | ||
JPS51107767A (en) * | 1975-03-19 | 1976-09-24 | Hitachi Ltd | HANDOTAIEPITAKISHARUSONO SEIZOHOHO |
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