JPS5619620A - Epitaxial growing method - Google Patents

Epitaxial growing method

Info

Publication number
JPS5619620A
JPS5619620A JP9560379A JP9560379A JPS5619620A JP S5619620 A JPS5619620 A JP S5619620A JP 9560379 A JP9560379 A JP 9560379A JP 9560379 A JP9560379 A JP 9560379A JP S5619620 A JPS5619620 A JP S5619620A
Authority
JP
Japan
Prior art keywords
chamber
gas flow
reaction
forcibly
atmospheric pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9560379A
Other languages
Japanese (ja)
Inventor
Kaoru Ikegami
Hajime Kamioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9560379A priority Critical patent/JPS5619620A/en
Publication of JPS5619620A publication Critical patent/JPS5619620A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502Flow conditions in reaction chamber
    • C23C16/4551Jet streams
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To contrive the uniformity of the thickness and the specific resistance of an epitaxial layer by accelerating gas flow velocity flowing into a reaction chamber and retaining generally atmospheric pressure to forcibly equalize gas flow. CONSTITUTION:A semiconductor substrate is set in a reaction furnace having a narrow cross sectional area, the chamber is evacuated forcibly to enhance the reaction gas flow speed flowing thereinto so as to uniformly flow the gas necessary for epitaxial growth to any portions and to retain atmospheric pressure in the chamber for epitaxial growth. In this configuration, the thickness of the layer can be uniformly formed to equalize the specific resistance so as to eliminate the means for inclining susceptor.
JP9560379A 1979-07-26 1979-07-26 Epitaxial growing method Pending JPS5619620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9560379A JPS5619620A (en) 1979-07-26 1979-07-26 Epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9560379A JPS5619620A (en) 1979-07-26 1979-07-26 Epitaxial growing method

Publications (1)

Publication Number Publication Date
JPS5619620A true JPS5619620A (en) 1981-02-24

Family

ID=14142120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9560379A Pending JPS5619620A (en) 1979-07-26 1979-07-26 Epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS5619620A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509471A (en) * 1973-05-21 1975-01-30
JPS5091254A (en) * 1973-12-12 1975-07-21
JPS51107767A (en) * 1975-03-19 1976-09-24 Hitachi Ltd HANDOTAIEPITAKISHARUSONO SEIZOHOHO

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509471A (en) * 1973-05-21 1975-01-30
JPS5091254A (en) * 1973-12-12 1975-07-21
JPS51107767A (en) * 1975-03-19 1976-09-24 Hitachi Ltd HANDOTAIEPITAKISHARUSONO SEIZOHOHO

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