GB1470614A - Process for deposition of polycrystalline silicon - Google Patents

Process for deposition of polycrystalline silicon

Info

Publication number
GB1470614A
GB1470614A GB5447774A GB5447774A GB1470614A GB 1470614 A GB1470614 A GB 1470614A GB 5447774 A GB5447774 A GB 5447774A GB 5447774 A GB5447774 A GB 5447774A GB 1470614 A GB1470614 A GB 1470614A
Authority
GB
United Kingdom
Prior art keywords
silicon
substrates
deposition
polycrystalline silicon
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5447774A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1470614A publication Critical patent/GB1470614A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)

Abstract

1470614 Polycrystalline silicon deposition MOTOROLA Inc 17 Dec 1974 [19 Dec 1973] 54477/74 Heading C1A [Also in Division C7] A method for the deposition of polycrystalline silicon on to a plurality of substrates, which may be selected from silicon, germanium, sapphire, spinel, ceramic, silicon dioxide, tungsten or molybdenum, comprises passing gaseous silicon from a source, e.g. SiH 4 , SiCl 2 H 2 , SiClH 3 or SiCl 4 over the substrates maintained in a heated furnace at a temperature less than 700‹ C. and spaced at a distance of at least 30 mils and a maximum of 2980 mils between adjacent surfaces; the major surfaces of the substrates are placed perpendicular to the gas flow which is drawn over the surfaces by a vacuum applied at the exhaust end of the furnace; when the desired thickness of silicon is obtained the substrates are withdrawn from the furnace at that end at which the source gas is supplied.
GB5447774A 1973-12-19 1974-12-17 Process for deposition of polycrystalline silicon Expired GB1470614A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US426396A US3900597A (en) 1973-12-19 1973-12-19 System and process for deposition of polycrystalline silicon with silane in vacuum

Publications (1)

Publication Number Publication Date
GB1470614A true GB1470614A (en) 1977-04-14

Family

ID=23690641

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5447774A Expired GB1470614A (en) 1973-12-19 1974-12-17 Process for deposition of polycrystalline silicon

Country Status (7)

Country Link
US (1) US3900597A (en)
JP (1) JPS5095185A (en)
CA (1) CA1047850A (en)
DE (1) DE2460211B2 (en)
FR (1) FR2255707B1 (en)
GB (1) GB1470614A (en)
HK (1) HK68380A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2156385A (en) * 1984-03-26 1985-10-09 Agency Ind Science Techn Method of forming silicon film on substrate in plasma atmosphere

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DE2539434A1 (en) * 1975-09-04 1977-03-17 Siemens Ag DEVICE FOR ALL-ROUND COATING OF SMALL METALLIC PARTS
GB1518564A (en) * 1975-11-25 1978-07-19 Motorola Inc Method for the low pressure pyrolytic deposition of silicon nitride
US4027053A (en) * 1975-12-19 1977-05-31 Motorola, Inc. Method of producing polycrystalline silicon ribbon
US4053335A (en) * 1976-04-02 1977-10-11 International Business Machines Corporation Method of gettering using backside polycrystalline silicon
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
JPS584811B2 (en) * 1978-10-31 1983-01-27 富士通株式会社 Manufacturing method of semiconductor device
US4203387A (en) * 1978-12-28 1980-05-20 General Signal Corporation Cage for low pressure silicon dioxide deposition reactors
JPS55110032A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Method for high-frequency heated epitaxial growth
DE2907371C2 (en) * 1979-02-24 1981-03-12 Heraeus Quarzschmelze Gmbh, 6450 Hanau High temperature resistant protective tube for heat treatment of semiconductor components
US4228004A (en) * 1979-04-12 1980-10-14 Thermco Products Corporation Method and apparatus for removal of by-products of chemical vapor deposition from oil for vacuum pump
JPS55158623A (en) * 1979-05-29 1980-12-10 Hitachi Ltd Method of controlling semiconductor vapor phase growth
GB2049643B (en) * 1979-05-30 1983-07-20 Siemens Ag Process for the production of silicon having semiconducting proprties
US4263336A (en) * 1979-11-23 1981-04-21 Motorola, Inc. Reduced pressure induction heated reactor and method
US4315968A (en) * 1980-02-06 1982-02-16 Avco Corporation Silicon coated silicon carbide filaments and method
US4444812A (en) * 1980-07-28 1984-04-24 Monsanto Company Combination gas curtains for continuous chemical vapor deposition production of silicon bodies
DD206687A3 (en) * 1981-07-28 1984-02-01 Mikroelektronik Zt Forsch Tech METHOD AND DEVICE FOR FUELING LP CVD PROCESSES IN A PIPE REACTOR
US4401687A (en) * 1981-11-12 1983-08-30 Advanced Semiconductor Materials America Plasma deposition of silicon
JPS58172217A (en) * 1982-03-31 1983-10-11 Toshiba Corp Formation of polycrystalline silicon film
US4547404A (en) * 1982-08-27 1985-10-15 Anicon, Inc. Chemical vapor deposition process
US4489103A (en) * 1983-09-16 1984-12-18 Rca Corporation SIPOS Deposition method
US4556584A (en) * 1984-05-03 1985-12-03 Btu Engineering Corporation Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates
FR2572312B1 (en) * 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim PROCESS FOR MANUFACTURING ULTRA-PUR SILICON BARS
US4744863A (en) * 1985-04-26 1988-05-17 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4853669A (en) * 1985-04-26 1989-08-01 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4597160A (en) * 1985-08-09 1986-07-01 Rca Corporation Method of fabricating a polysilicon transistor with a high carrier mobility
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
US5298452A (en) * 1986-09-12 1994-03-29 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US5607511A (en) * 1992-02-21 1997-03-04 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process
US5024972A (en) * 1990-01-29 1991-06-18 Motorola, Inc. Deposition of a conductive layer for contacts
US5181964A (en) * 1990-06-13 1993-01-26 International Business Machines Corporation Single ended ultra-high vacuum chemical vapor deposition (uhv/cvd) reactor
US5112773A (en) * 1991-04-10 1992-05-12 Micron Technology, Inc. Methods for texturizing polysilicon utilizing gas phase nucleation
US5695819A (en) * 1991-08-09 1997-12-09 Applied Materials, Inc. Method of enhancing step coverage of polysilicon deposits
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
JP3121131B2 (en) * 1991-08-09 2000-12-25 アプライド マテリアルズ インコーポレイテッド Low temperature and high pressure silicon deposition method
US5753559A (en) * 1996-01-16 1998-05-19 United Microelectronics Corporation Method for growing hemispherical grain silicon
DE69923436T2 (en) * 1998-03-06 2006-01-05 Asm America Inc., Phoenix PROCESS FOR COATING SILICON WITH HIGH EDGE COVER
US6479166B1 (en) 1998-10-06 2002-11-12 Case Western Reserve University Large area polysilicon films with predetermined stress characteristics and method for producing same
US6268068B1 (en) 1998-10-06 2001-07-31 Case Western Reserve University Low stress polysilicon film and method for producing same
US6564810B1 (en) 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
US6666924B1 (en) 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
AU2002306436A1 (en) * 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
US6957741B2 (en) * 2001-08-07 2005-10-25 Manfred Franz Axel Freissle Screening arrangement
WO2004009861A2 (en) * 2002-07-19 2004-01-29 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US6936086B2 (en) * 2002-09-11 2005-08-30 Planar Systems, Inc. High conductivity particle filter
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9443730B2 (en) 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
CN115613007B (en) * 2022-10-13 2024-10-01 上海中欣晶圆半导体科技有限公司 Film forming method for improving warpage

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DE1138481C2 (en) * 1961-06-09 1963-05-22 Siemens Ag Process for the production of semiconductor arrangements by single-crystal deposition of semiconductor material from the gas phase
US3409483A (en) * 1964-05-01 1968-11-05 Texas Instruments Inc Selective deposition of semiconductor materials
US3446936A (en) * 1966-01-03 1969-05-27 Sperry Rand Corp Evaporant source
DE1614893C3 (en) * 1967-11-28 1979-08-09 Telefunken Patentverwertungs Gmbh, 7900 Ulm Method for improving and stabilizing the characteristic curve of a semiconductor component and applications thereof
JPS509471B1 (en) * 1968-10-25 1975-04-12
DE1900116C3 (en) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of high-purity monocrystalline layers consisting of silicon
JPS5311051B2 (en) * 1973-06-29 1978-04-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2156385A (en) * 1984-03-26 1985-10-09 Agency Ind Science Techn Method of forming silicon film on substrate in plasma atmosphere

Also Published As

Publication number Publication date
DE2460211A1 (en) 1975-11-06
US3900597A (en) 1975-08-19
CA1047850A (en) 1979-02-06
HK68380A (en) 1980-12-12
FR2255707A1 (en) 1975-07-18
JPS5095185A (en) 1975-07-29
FR2255707B1 (en) 1978-06-23
DE2460211B2 (en) 1979-05-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19941216