GB2156385A - Method of forming silicon film on substrate in plasma atmosphere - Google Patents
Method of forming silicon film on substrate in plasma atmosphere Download PDFInfo
- Publication number
- GB2156385A GB2156385A GB8506730A GB8506730A GB2156385A GB 2156385 A GB2156385 A GB 2156385A GB 8506730 A GB8506730 A GB 8506730A GB 8506730 A GB8506730 A GB 8506730A GB 2156385 A GB2156385 A GB 2156385A
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- Prior art keywords
- silicon film
- reactant gas
- substrate
- fluorosilane
- gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
In depositing a silicon film on a heated substrate from a reactant gas in plasma state, a fluorosilane having at least one hydrogen atom such as, e.g., SiH3F, SiH2F2 or Si2H4F2 is used as at least a portion of the reactant gas. Together with such a partially fluorinated silane, the reactant gas may contain hydrogen, unsubstituted silane, tetrafluoromonosilane or an inert gas. Partially fluorinated silanes are safer than unsubstituted silanes and are advantageous over tetrafluoromonosilane in respect of the rate of growth of the silicon film.
Description
SPECIFICATION
Method of forming silicon film on substrate in plasma atmosphere
This invention relates to a method of forming a silicon film on a substrate by deposition from a reactant gas in plasma state.
It is well known that a silicon film can be formed on a substrate of a desired material by keeping the substrate heated and in contact with a plasma of a reactant gas which comprises a compound of silicon with hydrogen or a halogen. Until now the reactant gas is selected from monosilane, disilane and some kinds of mixed gases such as monosilane-hydrogen, monosilane-inert gas, disilane-hydrogen, disilaneinert gas, tetrafluoromonosilane-hydrogen, tetrafluoromonosilane-monosilane and tetrafluoromonosilanemonosilane-hydrogen.
At present, it is prevailing to use either monosilane or disilane as the silicon-containing component of the above-mentioned reactant gas because when such a reactant gas is used a silicon film is formed at a desirably high rate of growth of the film, and also because the obtained silicon film exhibits good photoelectric characteristics. However, both monosilane and disilane react readily and vigorously with oxygen in air to burn with a flame, and therefore handling of these silane gases must be done with great care.
Tetrafluoromonosilane is less dangerous than unsubstituted silanes. Furthermore, it is accepted that a fluorine-containing silicon film formed by using tetrafluoromonosilane as a principal component of the reactant gas in the above-mentioned method is better in thermal stability than silicon films formed by using either monosilane or disilane because of high strength of bond between silicon and fluorine. However, the use of tetrafluoromonosilane as the principal material for a silicon film raises an industrially serious problem that the rate of growth of the film becomes exceedingly lower than in the cases of using monosilane or disilane as the principal material.To overcome this problem, it is believed to be necessary to carry out the film forming operation under very severe conditions where the gas pressure in the plasma atmosphere is above about 1 Torr and the power density of the plasma discharge on the cathode side is above about 1 W/cm2. However, when the electric discharge is made at such a high power density the plasma will act on the wall of the vacuum chamber to incorporate therein foreign matters that may be adsorbed on or adhering to the wall and even some constituent elements of the wall. Then, such impurities will enter the silicon film formed in the plasma atmosphere as a cause of significant degradation of the semiconductor characteristics of the film. Besides, there arises the need of using a large capacity high frequency power supply for making a discharge at such a high power density as required.
This is unfavourable for industrial practice of the silicon film forming method. As regards the gas pressure, it is difficult to continue a stable film forming operation under such a high pressure as mentioned above because a considerable quantity of powder accumulates in the vacuum chamber during growth of a silicon film.
It is an object of the present invention to solve the above described problems in the conventional method of forming a silicon film on a substrate in a plasma atmosphere by providing an improved method, which uses a safe gas material and in which the rate of growth of the silicon film is sufficiently high even when the power density of the high frequency discharge is very low.
A method according to the invention for forming a silicon film on a substrate has the step of keeping the substrate heated in a plasma atmosphere of a reactant gas and is characterized in that the reactant gas comprises a fluorosilane having at least one hydrogen atom.
Usually the above-mentioned fluorosilane for use in this method is selected from partially fluorinated monosilanes SiHXF4.X, where x is 3, 2 or 1, and partially fluorinated disilanes Si2HvF6yl where y is 5, 4, 3, 2 or 1. These fluorosilanes are less dangerous than monosilane and disilane and, therefore, are very favourable for production management. For example, SiHF3 and SiH2F2 are nonflammable. SiH3F begins to burn upon contact with a high temperature heat source, but this compound is a gas material far safer than SiH4 and Si2H6. Furthermore, when any of these partially fluorinated silanes is used the rate of growth of a silicon film in a plasma atmosphere is remarkably higher than in the case of using tetrafluoromonosilane under the same operation conditions.Particularly when using SiH3F or SiH2F2, the rate of silicon film growth is considerably higher than in the case of using SiH4 and is comparable to, or higher than, the case of using Si2H6. In this respect, the advantage of the present invention becomes very significant particularly when the film forming operation is performed under low power density conditions.
The reactant gas in a method according to the invention may be a mixture of at least one kind of partially fluorinated silane and at least one different gas material such as hydrogen, an unsubstituted or fluorinated silane and/or an inert gas.
The silicon films formed by the method of the invention exhibit good photoelectric characteristics. This method can provide a silicon film containing fluorine, but this is not inevitable. By controlling the film forming operation conditions it is also possible to obtain a silicon film which is practically free of fluorine and may contain hydrogen.
The method according to the invention can be performed by using conventional apparatus and under generally the same operation conditions as in the cases of using monosilane or disilane for forming a silicon film in a plasma atmosphere.
In the accompanying drawings:
Figure 1 shows infrared absorption spectrum charts obtained on two kinds of silicon films formed in examples of the present invention; and
Figure 2 is a diagrammatic illustration of a manufacturing apparatus used in examples of the present invention.
As the reactant gas in the method of the invention, it is optional whether to use only one kind of fluorosilane having at least one hydrogen atom or to use a mixture of two or more kinds of such fluorosilanes. In either case, the fluorosilane(s) may be mixed with at least one different gas material which is usually selected from hydrogen, monosilane, disilane, tetrafluoromonosilane and inert gases such as helium, neon and argon. In principle the mixing ratio is not critical. In practice, however, it is suitable that the total amount of the partially fluorinated silane(s) in the mixed reactant gas is at least 0.1% by volume, and preferably at least 10% by volume. In practice, it is preferable to make a choice of the partially fluorinated silane(s) among SiH3F, SiH2F2 and Si2H4F2.
In forming a silicon film by the method according to the invention, the deposition of silicon on the heated substrate can be accomplished under generally the same conditions of the plasma atmosphere, except for the difference in the composition of the reactant gas, as in the conventional plasma deposition method using monosilane or disilane as the silicon-containing component. That is, the gas pressure of the plasma atmosphere is widely variable over the range from 0.001 to 20 Torr, and the power density of the high frequency discharge is also widely variable over the range from 0.0001 to 10 W/cm2. Every substrate material useful in the conventional method can be used also in the method of the invention. That is, the substrate material may be glass, quartz, ceramic or metal.In the case of a nonconductive substrate material, the surface on which a silicon film is to be formed may precedingly be coated with a conductive film such as a tin dioxide or diindium trioxide film. The temperature of the substrate at the silicon film forming operation is not critical. Usually a suitable substrate temperature can be found within the range from about 150"C to about 500"C.
A silicon film formed by the method of the invention does not always contain fluorine. It depends on the operation conditions. In Fig. 1, for example, the chart (A) shows the infrared absorption spectrum pattern of a silicon film in the below-described Example 9, wherein the reactant gas was 100% SiH3F and was supplied into the vacuum chamber for plasma deposition at a flow rate of 2.5 SCCM (standard cubic centimeter per minute) to maintain the gas pressure of the plasma atmosphere at 50 mTorr while the power density of the high frequency discharge was 0.03 W/cm2, and the substrate temperature was 400"C. The chart (A) shows only absorption peaks attributed to Si-H bond at about 2000 cm' and at about 625 cm 1. Thus, this silicon film was confirmed to contain hydrogen and to be practically free of fluorine.In contrast, another silicon film formed in the below-described Example 7 wherein the reactant gas material and the film-forming operation conditions were the same as in Example 9 except that the substrate temperature was varied to 200"C gave the infrared absorption spectrum chart (B) in Fig. 1. The chart (B) indicates absorption at about 800-1000 cm-l, which is attributed to Si-F bond, besides the absorption peaks attributed to Si-H bond. Thus, this silicon film was confirmed to contain fluorine together with hydrogen. As demonstrated by these examples, in the present invention it is possible to introduce fluorine into the silicon film only when it is desired, and the amount of fluorine to be introduced can easily be controlled by controlling the film forming operation conditions.
The invention will further be illustrated by the following nonlimitative examples.
EXAMPLES 1-13
In every example, a silicon film was formed on a glass substrate (*7059 of Corning Glass) by using conventional apparatus for the growth of a film, plasma atmosphere. Referring to Fig. 2, the main part of the apparatus was a vacuum chamber 10 which contained a pair of electrodes 12 and 14 to make glow discharge by applying a high frequency voltage across them from a high frequency power supply 16. In the vacuum chamber 10 a substrate 20 was placed on a base (not illustrated) which was positioned riear the cathode 14 and was provided with a heater 18.
Initially, the vacuum chamber 10 and associated pipes for the feed of a raw material gas, or a mixture of raw material gases, from cylinder 30, 32, 34 were evacuated to a pressure below 1 x 10-8 Torr by operating an oil-sealed rotary pump 36 and a molecular turbopump 38. After that, either a selected fluorosilane gas or a mixture of a selected fluorosilane gas and hydrogen gas was introduced into the vacuum chamber 10 from the cylinder(s) 30, 32 and/or 34 through the mass flow rate controller(s) 24 and/or 26 adjusted so as to realize a predetermined constant flow rate at the inlet to the vacuum chamber 10.
The degree of vacuum in the chamber 10 was monitored with a vacuum gage 22 to maintain a predetermined gas pressure, which was 50 mTorr in every example, in the chamber 10 by appropriate manipulation of a main valve 40 and operation of an oil-sealed rotary pump 42 and a mechanical booster pump 44. The heater 18 was controlled so as to keep the substrate 20 heated at a predetermined temperature, which ranged from 200 to 400"C in these examples. Under these conditions, the power supply 16 was operated to apply a high frequency voltage across the electrodes 12 and 14 to make glow discharge with a predetermined power density, which was either 0.03 W/cm2 or 0.31 W/cm2, to thereby produce a plasma of the reactant gas in the chamber 10. The feed of the raw material gas(es) and the application of the high frequency voltage were continued for a selected length of time ranging from 25 to 240 min to
Material Gas Gas Power Sub- Gas Growth Film Growth Dark Photo Composition Flow Density strate Pressure Time Thick- Rate Conduc- conduc (by volume) Rate (W/cm) Temp. (mTorr) (min) ness ( /sec) tivity tivity (SCCM) ( C) ( m) (#-1cm-1) (#-1cm-1) Ex. 1 SiH2F2 100% 2.5 0.03 200 50 240 1.04 0.72 1.5x10-10 1.3x10-7 Ex. 2 ibid 2.5 0.03 300 50 240 1.56 1.08 9.5x40-9 1.6x10-5 Ex. 3 ibid 2.5 0.03 400 50 240 1.22 0.85 5.4x10-6 7.3x10-6 Ex. 4 ibid 2.5 0.31 300 50 40 0.75 3.12 1.5x10-10 6.3x10-8 Ex. 5 SiH2F2/H2=1/1 5.0 0.03 300 50 240 1.25 0.87 1.6x10-9 1.3x10-5 Ex. 6 SiH2F2/H2=1/9 5.0 0.03 300 50 240 0.64 0.44 9.8x10-10 2.9x10-5 Ex. 7 SiH3F 100% 2.5 0.03 200 50 90 0.81 1.50 2.6x10-11 9.0x10-8 Ex. 8 ibid 2.5 0.03 300 50 240 2.93 2.03 1.9x10-8 7.1x10-6 Ex. 9 ibid 2.5 0.03 400 50 90 0.99 1.83 3.2x10-7 5.8x10-5 Ex. 10 ibid 2.5 0.31 300 50 25 0.83 5.53 5.0x10-10 6.0x10-7 Ex. 11 SiH3F/SiH4=1/1 5.0 0.03 300 50 90 1.04 1.93 9.7x10-9 2.7x10-5 Ex. 12 ibid 5.0 0.31 300 50 30 1.56 8.67 3.4x10-10 1.6x10-6 Ex. 13 Si2H4F2 100% 2.5 0.03 300 50 40 0.99 4.11 2.0x10-8 8.3x10-5 Ref. 1 SiH4 100% 5.0 0.03 300 50 240 1.14 0.79 4.8x10-9 2.2x10-5 Ref. 2 ibid 5.0 0.31 300 50 40 1.30 5.42 2.0x10-10 4.1x10-6 Ref. 3 SiF4/H2=7/3 10.0 0.15 300 50 240 0.19 0.13 5.4x10-11 3.8x10-9 Ref. 4 SiF4/H2=5/5 10.0 0.15 300 800 120 0.44 0.61 2.4x10-11 1.2x10-7 Ref. 5 Si2H6 100% 5.0 0.03 300 50 90 1.13 2.10 1.5x10-9 1.9x10-5 thereby achieve the deposition of silicon film on the substrate 20 and growth of the silicon film to a thickness of about 1-2 clam. The raw materials and the particulars of the operation conditions in the respective examples were as shown in the following table.
The silicon films formed in Examples 1-13 were subjected to measurement of thickness to calculate the rate of film growth and also to the evaluation of their photoelectric characteristics. The results are contained in the following table.
REFERENCES 1-6 For comparison, monosilane, disilane or a mixture of tetrafluorosilane and hydrogen was used in place of the partially fluorinated silanes in the above examples, as shown in the following table. The apparatus and operations for forming a silicon film were as described in the above examples, but the operation conditions were partly varied as shown in the table. The results obtained in References 1-5 are also contained in the table.
The experimental data in the table demonstrate that when a partially fluorinated silane is used the rate of growth of a silicon film on the substrate becomes considerably higher than in the case of using tetrafluoromonosilane under similar conditions. As will be understood from the results obtained in References 3 and 4, when using SiF4 for avoiding danger and/or for obtaining a silicon film containing fluorine the rate of film growth remains below a desirable level even though the film forming operation is carried out by significantly enhancing the gas flow rate, gas pressure and/or power density. Also it will be understood that both SiH3F and SiH2F2 are advantageous over SiH4 in respect of the rate of growth of a silicon film under given conditions and are even comparable to, or better than, Si2H6. The advantage of SiH3F or
SiH2F2 becomes particularly notable when the power density is relatively low. For instance, in Example 8 where 100% SiH3F was used and Example 2 where 100% SiH2F2 was used, the power density was as low as 0.03 W/cm2 and the film growth rates were 2.03 A/sec and 108 A/sec, respectively. These growth rate values can be taken as considerably higher than the film growth rate of 0.79 A/sec in Reference 1 where 100% SiH4 was used without varying the power density and the other factors.
Claims (13)
1. A method of forming a silicon film on a substrate, which comprises keeping the substrate heated in a plasma atmosphere of a reactant gas at least a portion of which is a fluorosilane having at least one hydrogen atom.
2. A method according to claim 1, wherein said fluorosilane is a partially fluorinated monosilane or partially fluorinated disilane.
3. A method according to claim 2, wherein said fluorosilane is selected from SiH3F, SiH2F2 and Si2H4F2.
4. A method according to claim 1, 2 or 3, wherein said reactant gas further comprises hydrogen gas such that said fluorosilane occupies at least 0.1% of said reactant gas by volume.
5. A method according to claim 4, wherein said fluorosilane occupies at least 10% of said reactant gas by volume.
6. A method according to claim 1, 2 or 3, wherein said reactant gas further comprises another silicon compound selected from SiH4, SiF4 and Si2HG such that said fluorosilane having at least one hydrogn atom occupies at least 0.1% of said reactant gas by volume.
7. A method according to claim 6, wherein said fluorosilane having at least one hydrogen atom occupies at least 10% of said reactant gas by volume.
8. A method according to claim 1, 2 or 3, wherein said reactant gas further comprises an inert gas.
9. A method according to any one of the preceding claims wherein the substrate is kept heated at a temperature from 1 500C to 500 C.
10. A method according to any one of the preceding claims, wherein the gas pressure in said plasma atmosphere is from 0.001 to 20 Torr.
11. A method according to claim 10, wherein the power density of a high frequency electric discharge for maintaining said plasma atmosphere is in the range from 0.0001 to 10 W/cm2.
12. A method of forming a silicon film on a substrate, substantially as hereinbefore described in any one of Examples 1 to
13.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59056175A JPS60200523A (en) | 1984-03-26 | 1984-03-26 | Manufacture of silicon thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB8506730D0 GB8506730D0 (en) | 1985-04-17 |
| GB2156385A true GB2156385A (en) | 1985-10-09 |
Family
ID=13019763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8506730A Withdrawn GB2156385A (en) | 1984-03-26 | 1985-03-15 | Method of forming silicon film on substrate in plasma atmosphere |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS60200523A (en) |
| DE (1) | DE3509910A1 (en) |
| FR (1) | FR2561666A1 (en) |
| GB (1) | GB2156385A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0240314A1 (en) * | 1986-03-31 | 1987-10-07 | Canon Kabushiki Kaisha | Method for forming deposited film |
| FR2600082A1 (en) * | 1986-06-13 | 1987-12-18 | Balzers Hochvakuum | THERMO-CHEMICAL PROCESS FOR SURFACE TREATMENT IN REACTIVE GAS PLASMA, AND PARTS PROCESSED THEREBY |
| US4762808A (en) * | 1987-06-22 | 1988-08-09 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes |
| US4818560A (en) * | 1985-12-28 | 1989-04-04 | Canon Kabushiki Kaisha | Method for preparation of multi-layer structure film |
| EP0344863A1 (en) * | 1988-05-30 | 1989-12-06 | Interuniversitair Microelektronica Centrum Vzw | A method of producing a thin film transistor |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60251275A (en) * | 1984-05-29 | 1985-12-11 | Mitsui Toatsu Chem Inc | Manufacture of thin silicon fluoride film |
| JPS62125682A (en) * | 1985-11-26 | 1987-06-06 | Hoya Corp | Manufacture of solar battery |
| JPH0494156U (en) * | 1990-12-28 | 1992-08-14 |
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| GB1019653A (en) * | 1962-06-04 | 1966-02-09 | Union Carbide Corp | Improvements in and relating to the purification of silicon compounds |
| GB1119968A (en) * | 1964-11-06 | 1968-07-17 | Siemens Ag | Improvements in or relating to methods producing semiconductor material |
| GB1336189A (en) * | 1970-07-02 | 1973-11-07 | Siemens Ag | Manufacture of silicon monocrystals |
| GB1470614A (en) * | 1973-12-19 | 1977-04-14 | Motorola Inc | Process for deposition of polycrystalline silicon |
| GB2043042A (en) * | 1979-02-05 | 1980-10-01 | Siemens Ag | Production of semiconductor bodies made of amorphous silicon |
| EP0039417A1 (en) * | 1980-05-02 | 1981-11-11 | Licentia Patent-Verwaltungs-GmbH | Process for producing silicon |
| WO1981003133A1 (en) * | 1980-05-09 | 1981-11-12 | Motorola Inc | High pressure plasma deposition of silicon |
| GB2087930A (en) * | 1980-10-16 | 1982-06-03 | Canon Kk | Producing photoconductive member by glow discharge deposition of amorphous silicon |
| GB2109414A (en) * | 1981-11-12 | 1983-06-02 | Advanced Semiconductor Mat | Plasma deposition of silicon |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| JPS55154726A (en) * | 1979-05-22 | 1980-12-02 | Shunpei Yamazaki | Manufacture of semiconductor device |
| JPS56102577A (en) * | 1980-01-18 | 1981-08-17 | Mitsubishi Electric Corp | Method and device for forming thin film |
| JPS5767020A (en) * | 1980-10-15 | 1982-04-23 | Agency Of Ind Science & Technol | Thin silicon film and its manufacture |
| JPS5842126B2 (en) * | 1980-10-31 | 1983-09-17 | 鐘淵化学工業株式会社 | Amorphous silicon manufacturing method |
| DE3208494C2 (en) * | 1981-03-09 | 1993-09-30 | Canon Kk | Process for producing a photoconductive element |
| US4460673A (en) * | 1981-06-03 | 1984-07-17 | Fuji Electric Company, Ltd. | Method of producing amorphous silicon layer and its manufacturing apparatus |
| US4637938A (en) * | 1983-08-19 | 1987-01-20 | Energy Conversion Devices, Inc. | Methods of using selective optical excitation in deposition processes and the detection of new compositions |
-
1984
- 1984-03-26 JP JP59056175A patent/JPS60200523A/en active Pending
-
1985
- 1985-03-15 GB GB8506730A patent/GB2156385A/en not_active Withdrawn
- 1985-03-19 DE DE19853509910 patent/DE3509910A1/en not_active Ceased
- 1985-03-25 FR FR8504417A patent/FR2561666A1/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1019653A (en) * | 1962-06-04 | 1966-02-09 | Union Carbide Corp | Improvements in and relating to the purification of silicon compounds |
| GB1119968A (en) * | 1964-11-06 | 1968-07-17 | Siemens Ag | Improvements in or relating to methods producing semiconductor material |
| GB1336189A (en) * | 1970-07-02 | 1973-11-07 | Siemens Ag | Manufacture of silicon monocrystals |
| GB1470614A (en) * | 1973-12-19 | 1977-04-14 | Motorola Inc | Process for deposition of polycrystalline silicon |
| GB2043042A (en) * | 1979-02-05 | 1980-10-01 | Siemens Ag | Production of semiconductor bodies made of amorphous silicon |
| EP0039417A1 (en) * | 1980-05-02 | 1981-11-11 | Licentia Patent-Verwaltungs-GmbH | Process for producing silicon |
| WO1981003133A1 (en) * | 1980-05-09 | 1981-11-12 | Motorola Inc | High pressure plasma deposition of silicon |
| GB2087930A (en) * | 1980-10-16 | 1982-06-03 | Canon Kk | Producing photoconductive member by glow discharge deposition of amorphous silicon |
| GB2109414A (en) * | 1981-11-12 | 1983-06-02 | Advanced Semiconductor Mat | Plasma deposition of silicon |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4818560A (en) * | 1985-12-28 | 1989-04-04 | Canon Kabushiki Kaisha | Method for preparation of multi-layer structure film |
| EP0240314A1 (en) * | 1986-03-31 | 1987-10-07 | Canon Kabushiki Kaisha | Method for forming deposited film |
| FR2600082A1 (en) * | 1986-06-13 | 1987-12-18 | Balzers Hochvakuum | THERMO-CHEMICAL PROCESS FOR SURFACE TREATMENT IN REACTIVE GAS PLASMA, AND PARTS PROCESSED THEREBY |
| GB2192196A (en) * | 1986-06-13 | 1988-01-06 | Balzers Hochvakuum | Process for the thermochemical surface treatment of materials in a reactive gas plasma |
| GB2192196B (en) * | 1986-06-13 | 1991-01-02 | Balzers Hochvakuum | Process for the thermochemical surface treatment of materials in a reactive gas plasma |
| US4762808A (en) * | 1987-06-22 | 1988-08-09 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes |
| EP0296702A2 (en) * | 1987-06-22 | 1988-12-28 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes |
| EP0296702A3 (en) * | 1987-06-22 | 1989-08-23 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes |
| AU610153B2 (en) * | 1987-06-22 | 1991-05-16 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes |
| EP0344863A1 (en) * | 1988-05-30 | 1989-12-06 | Interuniversitair Microelektronica Centrum Vzw | A method of producing a thin film transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60200523A (en) | 1985-10-11 |
| FR2561666A1 (en) | 1985-09-27 |
| DE3509910A1 (en) | 1985-10-03 |
| GB8506730D0 (en) | 1985-04-17 |
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| Date | Code | Title | Description |
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| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |