GB8506730D0 - Forming silicon film - Google Patents

Forming silicon film

Info

Publication number
GB8506730D0
GB8506730D0 GB8506730A GB8506730A GB8506730D0 GB 8506730 D0 GB8506730 D0 GB 8506730D0 GB 8506730 A GB8506730 A GB 8506730A GB 8506730 A GB8506730 A GB 8506730A GB 8506730 D0 GB8506730 D0 GB 8506730D0
Authority
GB
United Kingdom
Prior art keywords
silicon film
forming silicon
forming
film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8506730A
Other versions
GB2156385A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Publication of GB8506730D0 publication Critical patent/GB8506730D0/en
Publication of GB2156385A publication Critical patent/GB2156385A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
GB8506730A 1984-03-26 1985-03-15 Method of forming silicon film on substrate in plasma atmosphere Withdrawn GB2156385A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59056175A JPS60200523A (en) 1984-03-26 1984-03-26 Manufacture of silicon thin film

Publications (2)

Publication Number Publication Date
GB8506730D0 true GB8506730D0 (en) 1985-04-17
GB2156385A GB2156385A (en) 1985-10-09

Family

ID=13019763

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8506730A Withdrawn GB2156385A (en) 1984-03-26 1985-03-15 Method of forming silicon film on substrate in plasma atmosphere

Country Status (4)

Country Link
JP (1) JPS60200523A (en)
DE (1) DE3509910A1 (en)
FR (1) FR2561666A1 (en)
GB (1) GB2156385A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251275A (en) * 1984-05-29 1985-12-11 Mitsui Toatsu Chem Inc Manufacture of thin silicon fluoride film
JPS62125682A (en) * 1985-11-26 1987-06-06 Hoya Corp Manufacture of solar battery
JPH084071B2 (en) * 1985-12-28 1996-01-17 キヤノン株式会社 Deposited film formation method
JPS62228471A (en) * 1986-03-31 1987-10-07 Canon Inc Formation of deposited film
CH671407A5 (en) * 1986-06-13 1989-08-31 Balzers Hochvakuum
US4762808A (en) * 1987-06-22 1988-08-09 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
NL8801379A (en) * 1988-05-30 1989-12-18 Imec Inter Uni Micro Electr METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR AND SUCH A THIN FILM TRANSISTOR
JPH0494156U (en) * 1990-12-28 1992-08-14

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE632835A (en) * 1962-06-04
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
DE2032878A1 (en) * 1970-07-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München Process for the production of low dislocation silicon single crystals
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
DE2904171A1 (en) * 1979-02-05 1980-08-14 Siemens Ag METHOD FOR PRODUCING SEMICONDUCTOR BODIES MADE OF AMORPHOUS SILICON BY GLIMMER DISCHARGE
JPS55154726A (en) * 1979-05-22 1980-12-02 Shunpei Yamazaki Manufacture of semiconductor device
DE3016807A1 (en) * 1980-05-02 1981-11-05 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt METHOD FOR PRODUCING SILICON
JPS56102577A (en) * 1980-01-18 1981-08-17 Mitsubishi Electric Corp Method and device for forming thin film
US4292342A (en) * 1980-05-09 1981-09-29 Motorola, Inc. High pressure plasma deposition of silicon
JPS5767020A (en) * 1980-10-15 1982-04-23 Agency Of Ind Science & Technol Thin silicon film and its manufacture
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member
JPS5842126B2 (en) * 1980-10-31 1983-09-17 鐘淵化学工業株式会社 Amorphous silicon manufacturing method
DE3208494C2 (en) * 1981-03-09 1993-09-30 Canon Kk Process for producing a photoconductive element
US4460673A (en) * 1981-06-03 1984-07-17 Fuji Electric Company, Ltd. Method of producing amorphous silicon layer and its manufacturing apparatus
US4401687A (en) * 1981-11-12 1983-08-30 Advanced Semiconductor Materials America Plasma deposition of silicon
US4637938A (en) * 1983-08-19 1987-01-20 Energy Conversion Devices, Inc. Methods of using selective optical excitation in deposition processes and the detection of new compositions

Also Published As

Publication number Publication date
JPS60200523A (en) 1985-10-11
FR2561666A1 (en) 1985-09-27
DE3509910A1 (en) 1985-10-03
GB2156385A (en) 1985-10-09

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)