GB1368315A - Method for producing semiconductor on-insulator electronic devices - Google Patents

Method for producing semiconductor on-insulator electronic devices

Info

Publication number
GB1368315A
GB1368315A GB4791271A GB4791271A GB1368315A GB 1368315 A GB1368315 A GB 1368315A GB 4791271 A GB4791271 A GB 4791271A GB 4791271 A GB4791271 A GB 4791271A GB 1368315 A GB1368315 A GB 1368315A
Authority
GB
United Kingdom
Prior art keywords
monocrystalline
mgo
electronic devices
semi
producing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4791271A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1368315A publication Critical patent/GB1368315A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Abstract

1368315 Epitaxial deposition of semiconductor TEXAS INSTRUMENTS Inc 14 Oct 1971 [2 Nov 1970] 47912/71 Heading C7F [Also in Division H1] A monocrystalline SOI is produced by heattreating a monocrystalline spinel substrate at a temperature in the range 1040-1145‹C. in a reducing atmosphere for a period of time sufficient to modify the composition of its surface to a desired composition for growth of a single crystal semi-conductor material thereon and to eliminate crystal defects such as cracks, twins, dislocations and grain boundaries and epitaxiallly depositing a thin monocrystalline semi-conductor on the modified surface. For example, MgO. Al 2 O 3 is heated in H 2 to give MgO. x Al 2 O 3 where x = 1À05 to 1À1, and the hydrogen atmosphere is then changed to H 2 /0À3 vol % SiH 4 + PH 3 dopant to deposit P- doped Si.
GB4791271A 1970-11-02 1971-10-14 Method for producing semiconductor on-insulator electronic devices Expired GB1368315A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8620570A 1970-11-02 1970-11-02

Publications (1)

Publication Number Publication Date
GB1368315A true GB1368315A (en) 1974-09-25

Family

ID=22196987

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4791271A Expired GB1368315A (en) 1970-11-02 1971-10-14 Method for producing semiconductor on-insulator electronic devices

Country Status (6)

Country Link
US (1) US3796597A (en)
JP (1) JPS557017B1 (en)
CA (1) CA957250A (en)
DE (1) DE2153862B2 (en)
FR (1) FR2113447A5 (en)
GB (1) GB1368315A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129019A (en) * 1982-09-30 1984-05-10 Western Electric Co Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177321A (en) * 1972-07-25 1979-12-04 Semiconductor Research Foundation Single crystal of semiconductive material on crystal of insulating material
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
US4147584A (en) * 1977-12-27 1979-04-03 Burroughs Corporation Method for providing low cost wafers for use as substrates for integrated circuits
US4330932A (en) * 1978-07-20 1982-05-25 The United States Of America As Represented By The Secretary Of The Navy Process for preparing isolated junctions in thin-film semiconductors utilizing shadow masked deposition to form graded-side mesas
IT1128752B (en) * 1980-01-18 1986-06-04 Olivetti & Co Spa POCKET ELECTRONIC CALCULATOR
JPS5879358U (en) * 1981-11-26 1983-05-28 シャープ株式会社 Small electronic device with printer
US4447497A (en) * 1982-05-03 1984-05-08 Rockwell International Corporation CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby
JPS61120548U (en) * 1985-01-18 1986-07-30
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
US6844084B2 (en) 2002-04-03 2005-01-18 Saint-Gobain Ceramics & Plastics, Inc. Spinel substrate and heteroepitaxial growth of III-V materials thereon
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129019A (en) * 1982-09-30 1984-05-10 Western Electric Co Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material

Also Published As

Publication number Publication date
FR2113447A5 (en) 1972-06-23
DE2153862A1 (en) 1972-05-10
CA957250A (en) 1974-11-05
DE2153862B2 (en) 1980-03-06
US3796597A (en) 1974-03-12
JPS557017B1 (en) 1980-02-21
DE2153862C3 (en) 1980-10-23

Similar Documents

Publication Publication Date Title
GB1368315A (en) Method for producing semiconductor on-insulator electronic devices
GB1151484A (en) Epitaxial Growth of Germanium
EP0301463A3 (en) Thin film silicon semiconductor device and process for producing it
EP0390608A3 (en) Method for forming semiconductor thin-film and resulting semiconductor thin-film
IE34306L (en) Epitaxial growth of semiconductor crystals.
GB1469978A (en) Methods of producing semiconductor devices
GB1213867A (en) Method of manufacturing silicon carbide single crystal filaments
CA2231625A1 (en) Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
GB1459839A (en) Dual growth rate method of depositing epitaxial crystalline layers
GB1490665A (en) Method of growing epitaxial layers of silicon
EP0253611A3 (en) Method of epitaxially growing gallium arsenide on silicon
JPS6432622A (en) Formation of soi film
GB1414254A (en) Epitaxial growth of semiconductor material from the liquid phase
GB1465830A (en) Reducing boundary charges in semiconductor layers grown on a substrate
GB1174702A (en) Semiconductor Growth on Dielectric Substrates
GB1160301A (en) Method of Forming a Crystalline Semiconductor Layer on an Alumina Substrate
GB998723A (en) Method for growing single thin film crystals upon amorphous substrates
GB1393337A (en) Method of growing a single crystal film
GB1370292A (en) Method for growing crystals
GB1433085A (en) Epitaxial crystal-growing
JPS5271171A (en) Production of epitaxial wafer
JPS6477924A (en) Manufacture of semiconductor device
JPS57115822A (en) Manufacture of semiconductor device
JPS5336182A (en) Thin semiconductor single crystal film forming insulation substrate
JPS5379384A (en) Forming method of polycrystalline gaas thin film and stabilizing method ofsemiconductor of semiconductor

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee