CA957250A - Method of producing semiconducting monocrystalline silicon and spinel substrates - Google Patents
Method of producing semiconducting monocrystalline silicon and spinel substratesInfo
- Publication number
- CA957250A CA957250A CA124,776A CA124776A CA957250A CA 957250 A CA957250 A CA 957250A CA 124776 A CA124776 A CA 124776A CA 957250 A CA957250 A CA 957250A
- Authority
- CA
- Canada
- Prior art keywords
- monocrystalline silicon
- spinel substrates
- producing semiconducting
- semiconducting monocrystalline
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title 1
- 229910052596 spinel Inorganic materials 0.000 title 1
- 239000011029 spinel Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/097—Lattice strain and defects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/967—Semiconductor on specified insulator
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8620570A | 1970-11-02 | 1970-11-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA957250A true CA957250A (en) | 1974-11-05 |
Family
ID=22196987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA124,776A Expired CA957250A (en) | 1970-11-02 | 1971-10-08 | Method of producing semiconducting monocrystalline silicon and spinel substrates |
Country Status (6)
Country | Link |
---|---|
US (1) | US3796597A (en) |
JP (1) | JPS557017B1 (en) |
CA (1) | CA957250A (en) |
DE (1) | DE2153862B2 (en) |
FR (1) | FR2113447A5 (en) |
GB (1) | GB1368315A (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4177321A (en) * | 1972-07-25 | 1979-12-04 | Semiconductor Research Foundation | Single crystal of semiconductive material on crystal of insulating material |
US4016016A (en) * | 1975-05-22 | 1977-04-05 | Rca Corporation | Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices |
US4147584A (en) * | 1977-12-27 | 1979-04-03 | Burroughs Corporation | Method for providing low cost wafers for use as substrates for integrated circuits |
US4330932A (en) * | 1978-07-20 | 1982-05-25 | The United States Of America As Represented By The Secretary Of The Navy | Process for preparing isolated junctions in thin-film semiconductors utilizing shadow masked deposition to form graded-side mesas |
IT1128752B (en) * | 1980-01-18 | 1986-06-04 | Olivetti & Co Spa | POCKET ELECTRONIC CALCULATOR |
JPS5879358U (en) * | 1981-11-26 | 1983-05-28 | シャープ株式会社 | Small electronic device with printer |
US4447497A (en) * | 1982-05-03 | 1984-05-08 | Rockwell International Corporation | CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby |
US4477308A (en) * | 1982-09-30 | 1984-10-16 | At&T Bell Laboratories | Heteroepitaxy of multiconstituent material by means of a _template layer |
JPS61120548U (en) * | 1985-01-18 | 1986-07-30 | ||
US6839362B2 (en) * | 2001-05-22 | 2005-01-04 | Saint-Gobain Ceramics & Plastics, Inc. | Cobalt-doped saturable absorber Q-switches and laser systems |
US6844084B2 (en) | 2002-04-03 | 2005-01-18 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel substrate and heteroepitaxial growth of III-V materials thereon |
US7045223B2 (en) * | 2003-09-23 | 2006-05-16 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
US7326477B2 (en) * | 2003-09-23 | 2008-02-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel boules, wafers, and methods for fabricating same |
US20050061230A1 (en) * | 2003-09-23 | 2005-03-24 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
US7919815B1 (en) | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
-
1970
- 1970-11-02 US US00086205A patent/US3796597A/en not_active Expired - Lifetime
-
1971
- 1971-10-08 CA CA124,776A patent/CA957250A/en not_active Expired
- 1971-10-14 GB GB4791271A patent/GB1368315A/en not_active Expired
- 1971-10-28 DE DE2153862A patent/DE2153862B2/en active Granted
- 1971-11-01 JP JP8708071A patent/JPS557017B1/ja active Pending
- 1971-11-02 FR FR7139182A patent/FR2113447A5/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2153862C3 (en) | 1980-10-23 |
DE2153862A1 (en) | 1972-05-10 |
FR2113447A5 (en) | 1972-06-23 |
GB1368315A (en) | 1974-09-25 |
JPS557017B1 (en) | 1980-02-21 |
US3796597A (en) | 1974-03-12 |
DE2153862B2 (en) | 1980-03-06 |
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