CA885692A - Semiconductor device and method of making same - Google Patents

Semiconductor device and method of making same

Info

Publication number
CA885692A
CA885692A CA885692A CA885692DA CA885692A CA 885692 A CA885692 A CA 885692A CA 885692 A CA885692 A CA 885692A CA 885692D A CA885692D A CA 885692DA CA 885692 A CA885692 A CA 885692A
Authority
CA
Canada
Prior art keywords
semiconductor device
making same
making
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA885692A
Inventor
Kimura Akihiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Publication date
Application granted granted Critical
Publication of CA885692A publication Critical patent/CA885692A/en
Expired legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
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    • H01L2224/03Manufacturing methods
    • H01L2224/0347Manufacturing methods using a lift-off mask
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    • H01L2224/48663Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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CA885692A Semiconductor device and method of making same Expired CA885692A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA885692T

Publications (1)

Publication Number Publication Date
CA885692A true CA885692A (en) 1971-11-09

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ID=36391986

Family Applications (1)

Application Number Title Priority Date Filing Date
CA885692A Expired CA885692A (en) Semiconductor device and method of making same

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