JPS6421075A - Vapor growth method and device under reduced pressure - Google Patents
Vapor growth method and device under reduced pressureInfo
- Publication number
- JPS6421075A JPS6421075A JP17852087A JP17852087A JPS6421075A JP S6421075 A JPS6421075 A JP S6421075A JP 17852087 A JP17852087 A JP 17852087A JP 17852087 A JP17852087 A JP 17852087A JP S6421075 A JPS6421075 A JP S6421075A
- Authority
- JP
- Japan
- Prior art keywords
- combination
- film formation
- vapor growth
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To minimize the inevitable damage of Si when selective vapor growth of a W film is carried out on an Si substrate, by selecting a combination so that film formation proceeds at a low rate, carrying out vapor growth and changing over the combination to other combination so that film formation proceeds at a high rate. CONSTITUTION:Gaseous WF6 and gaseous H2 are introduced into a device under reduced pressure, a combination of the temp. of an Si substrate with the flow rates of the reactive gases and the pressure is selected so that W film formation proceeds at a low rate, and a W film is formed on the Si substrate. The combination is then changed over to other combination so that W film formation proceeds at a high rate, and a thin W film is selectively formed on the Si substrate. The other combination is determined by a curve drawn with the amt. of SiF4 produced by a vapor growth reaction as an x-axis and film formation time as a y-axis.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178520A JPH0645876B2 (en) | 1987-07-17 | 1987-07-17 | Reduced pressure vapor deposition method and apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178520A JPH0645876B2 (en) | 1987-07-17 | 1987-07-17 | Reduced pressure vapor deposition method and apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6421075A true JPS6421075A (en) | 1989-01-24 |
JPH0645876B2 JPH0645876B2 (en) | 1994-06-15 |
Family
ID=16049912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62178520A Expired - Lifetime JPH0645876B2 (en) | 1987-07-17 | 1987-07-17 | Reduced pressure vapor deposition method and apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0645876B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6468474A (en) * | 1987-09-10 | 1989-03-14 | Tokyo Electron Ltd | Formation of film |
JPH01276624A (en) * | 1988-04-28 | 1989-11-07 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
JPH02237116A (en) * | 1989-03-10 | 1990-09-19 | Mitsubishi Electric Corp | Formation of thin film for semiconductor device |
US8020669B2 (en) | 2000-12-08 | 2011-09-20 | Kone Corporation | Elevator and traction sheave of an elevator |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63153273A (en) * | 1986-12-16 | 1988-06-25 | Matsushita Electric Ind Co Ltd | Method for selective deposition of thin metallic film |
-
1987
- 1987-07-17 JP JP62178520A patent/JPH0645876B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63153273A (en) * | 1986-12-16 | 1988-06-25 | Matsushita Electric Ind Co Ltd | Method for selective deposition of thin metallic film |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6468474A (en) * | 1987-09-10 | 1989-03-14 | Tokyo Electron Ltd | Formation of film |
JPH01276624A (en) * | 1988-04-28 | 1989-11-07 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
JPH02237116A (en) * | 1989-03-10 | 1990-09-19 | Mitsubishi Electric Corp | Formation of thin film for semiconductor device |
US8020669B2 (en) | 2000-12-08 | 2011-09-20 | Kone Corporation | Elevator and traction sheave of an elevator |
US8069955B2 (en) | 2000-12-08 | 2011-12-06 | Kone Corporation | Elevator and traction sheave of an elevator |
Also Published As
Publication number | Publication date |
---|---|
JPH0645876B2 (en) | 1994-06-15 |
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Legal Events
Date | Code | Title | Description |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080615 Year of fee payment: 14 |