JPS54107884A - Vacuum depositing method for silicon - Google Patents

Vacuum depositing method for silicon

Info

Publication number
JPS54107884A
JPS54107884A JP1489378A JP1489378A JPS54107884A JP S54107884 A JPS54107884 A JP S54107884A JP 1489378 A JP1489378 A JP 1489378A JP 1489378 A JP1489378 A JP 1489378A JP S54107884 A JPS54107884 A JP S54107884A
Authority
JP
Japan
Prior art keywords
silicon
vessel
carbonaceous material
vacuum depositing
depositing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1489378A
Other languages
Japanese (ja)
Inventor
Katsuyuki Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1489378A priority Critical patent/JPS54107884A/en
Publication of JPS54107884A publication Critical patent/JPS54107884A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment

Abstract

PURPOSE:To reduce time for deposition and to prevent explosion of molten silicon balls in vacuum deposition, by use of a vessel made of carbonaceous material as the vessel for silicon vacuum deposition by electron beam evaporation method. CONSTITUTION:Silicon 8 is placed on a vessel 12 made of carbonaceous material or graphite, or alumina mixed with not less than 50 % carbonaceous material powder, and is struck with electron beam 5 to effect silicon evaporation.
JP1489378A 1978-02-14 1978-02-14 Vacuum depositing method for silicon Pending JPS54107884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1489378A JPS54107884A (en) 1978-02-14 1978-02-14 Vacuum depositing method for silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1489378A JPS54107884A (en) 1978-02-14 1978-02-14 Vacuum depositing method for silicon

Publications (1)

Publication Number Publication Date
JPS54107884A true JPS54107884A (en) 1979-08-24

Family

ID=11873673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1489378A Pending JPS54107884A (en) 1978-02-14 1978-02-14 Vacuum depositing method for silicon

Country Status (1)

Country Link
JP (1) JPS54107884A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60190201A (en) * 1984-03-09 1985-09-27 Japan Atom Energy Res Inst Evaporation material having metal dripping preventing function
US6231826B1 (en) 1996-03-19 2001-05-15 Kawasaki Steel Corporation Process and apparatus for refining silicon
WO2011060717A1 (en) * 2009-11-19 2011-05-26 大连理工大学 Method and apparatus for removing phosphorus and boron from polysilicon by continuously smelting

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60190201A (en) * 1984-03-09 1985-09-27 Japan Atom Energy Res Inst Evaporation material having metal dripping preventing function
US6231826B1 (en) 1996-03-19 2001-05-15 Kawasaki Steel Corporation Process and apparatus for refining silicon
WO2011060717A1 (en) * 2009-11-19 2011-05-26 大连理工大学 Method and apparatus for removing phosphorus and boron from polysilicon by continuously smelting

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