JPS6479097A - Compound semiconductor vapor growth device - Google Patents
Compound semiconductor vapor growth deviceInfo
- Publication number
- JPS6479097A JPS6479097A JP23675587A JP23675587A JPS6479097A JP S6479097 A JPS6479097 A JP S6479097A JP 23675587 A JP23675587 A JP 23675587A JP 23675587 A JP23675587 A JP 23675587A JP S6479097 A JPS6479097 A JP S6479097A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- growth chamber
- hemispherical body
- gaseous raw
- space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To enable the rapid exchange of gaseous raw materials and to prevent the deposition of the resulted product of reaction on a hemispherical body so that the quality of a compd. semiconductor single crystal is improved by providing the hemispherical body to the space above the susceptor in a growth chamber and passing a cooling or preheating liquid into the inside space thereof. CONSTITUTION:The hemispherical body 22 is fixed from the peak part of the cylindrical vertical type growth chamber 10 having the nearly hemispherical shape in the upper part and is provided in the upper space of the susceptor 11 in the growth chamber 10. The hemispherical body 22 is so constituted that the cooling or preheating liquid can be passed in the inside space thereof. A suitable number of sheets of substrate crystals 12 are mounted to the side face of the barrel type susceptor 11 and while the susceptor 11 is rotated around the susceptor axis 24, the susceptor is heated by a heater 23. The inside of the growth chamber 10 is simultaneously evacuated from a vacuum discharge port 15 and gaseous raw materials and carrier gas are introduced into the chamber from a gaseous raw material introducing port 13 to epitaxially grow the thin films of the compd. semiconductor single crystals on the heated substrate crystals 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23675587A JPS6479097A (en) | 1987-09-21 | 1987-09-21 | Compound semiconductor vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23675587A JPS6479097A (en) | 1987-09-21 | 1987-09-21 | Compound semiconductor vapor growth device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6479097A true JPS6479097A (en) | 1989-03-24 |
| JPH0527598B2 JPH0527598B2 (en) | 1993-04-21 |
Family
ID=17005310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23675587A Granted JPS6479097A (en) | 1987-09-21 | 1987-09-21 | Compound semiconductor vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6479097A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002261030A (en) * | 2001-03-02 | 2002-09-13 | Sumitomo Chem Co Ltd | Method and apparatus for 3-5-family compound semiconductor epitaxial growth |
| JP2004507898A (en) * | 2000-09-01 | 2004-03-11 | アイクストロン、アーゲー | Apparatus and method for depositing a particularly crystalline layer on a particularly crystalline substrate |
| US7968362B2 (en) | 2001-03-27 | 2011-06-28 | Ricoh Company, Ltd. | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
| US11389962B2 (en) | 2010-05-24 | 2022-07-19 | Teladoc Health, Inc. | Telepresence robot system that can be accessed by a cellular phone |
| US11453126B2 (en) | 2012-05-22 | 2022-09-27 | Teladoc Health, Inc. | Clinical workflows utilizing autonomous and semi-autonomous telemedicine devices |
-
1987
- 1987-09-21 JP JP23675587A patent/JPS6479097A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004507898A (en) * | 2000-09-01 | 2004-03-11 | アイクストロン、アーゲー | Apparatus and method for depositing a particularly crystalline layer on a particularly crystalline substrate |
| JP2002261030A (en) * | 2001-03-02 | 2002-09-13 | Sumitomo Chem Co Ltd | Method and apparatus for 3-5-family compound semiconductor epitaxial growth |
| US7968362B2 (en) | 2001-03-27 | 2011-06-28 | Ricoh Company, Ltd. | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
| US8293555B2 (en) | 2001-03-27 | 2012-10-23 | Ricoh Company, Ltd. | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
| US11389962B2 (en) | 2010-05-24 | 2022-07-19 | Teladoc Health, Inc. | Telepresence robot system that can be accessed by a cellular phone |
| US11453126B2 (en) | 2012-05-22 | 2022-09-27 | Teladoc Health, Inc. | Clinical workflows utilizing autonomous and semi-autonomous telemedicine devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0527598B2 (en) | 1993-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5151296A (en) | Method for forming polycrystalline film by chemical vapor deposition process | |
| JPS6479097A (en) | Compound semiconductor vapor growth device | |
| US3206331A (en) | Method for coating articles with pyrolitic graphite | |
| CA2045526A1 (en) | Process for preparing silicon carbide | |
| JPS6441211A (en) | Semiconductor growth device | |
| JPS6480019A (en) | Vapor growth device | |
| JPS5623736A (en) | Vapor phase growing method | |
| JPS5542231A (en) | Reduced pressure vapor phase growing device | |
| FR2114105A5 (en) | Epitaxial radiation heated reactor - including a quartz reaction chamber | |
| JPS6473078A (en) | C.v.d. device | |
| JPS62244123A (en) | Vapor growth device | |
| Hirai et al. | Apparatus for Chemical Vapor Deposition of Silicon Carbide | |
| JPH04130085A (en) | Pulse type vapor growth device | |
| JPS63307192A (en) | Production of compound crystal and apparatus therefor | |
| JPS5663821A (en) | Manufacture of zinc oxide film | |
| JPS55140233A (en) | Chemical gaseous-phase growing device | |
| JPS6431973A (en) | Crystal growing device in chemical vapor of organo metallic compound | |
| JPS57128021A (en) | Vapor phase growing apparatus for semiconductor | |
| JPS6483597A (en) | Method for vapor growth of compound semiconductor | |
| JPS6342375A (en) | Vapor growth device | |
| JPS5520282A (en) | Vapor phase growing method for crystal | |
| JPS649890A (en) | Apparatus for molecular beam growth | |
| JPS56109898A (en) | Gaseous phase growing method for magnespinel | |
| JPS6075575A (en) | Chemical vapor phase plating apparatus | |
| JPH0245916A (en) | Vapor phase growth device |