JPH04130085A - Pulse type vapor growth device - Google Patents
Pulse type vapor growth deviceInfo
- Publication number
- JPH04130085A JPH04130085A JP24735890A JP24735890A JPH04130085A JP H04130085 A JPH04130085 A JP H04130085A JP 24735890 A JP24735890 A JP 24735890A JP 24735890 A JP24735890 A JP 24735890A JP H04130085 A JPH04130085 A JP H04130085A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- nozzle
- chamber
- susceptor
- gaseous raw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002994 raw material Substances 0.000 claims abstract description 30
- 238000001947 vapour-phase growth Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000012071 phase Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 11
- 239000002699 waste material Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 101100002917 Caenorhabditis elegans ash-2 gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- WLQSSCFYCXIQDZ-UHFFFAOYSA-N arsanyl Chemical compound [AsH2] WLQSSCFYCXIQDZ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、バレル型サセプタを有する気相成長装置に関
する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a vapor phase growth apparatus having a barrel-shaped susceptor.
（従来の技術）
第２図は、従来のバレル型気相成長装置の断面図である
。半導体基板５を装着したバレル型サセプタ３を回転軸
６でチャンバー４の中央に配置しタモので、原料ガス１
は、チャンバー３の頂部のノズル２から供給され、高周
波誘導加熱、抵抗加熱等の加熱手段（図示せず）により
所定の温度に加熱された半導体基板５の表面で気相反応
又は熱分解反応により半導体基板５上に結晶膜を形成し
た後、チャンバー４の下方の排気ロアから排出される。(Prior Art) FIG. 2 is a sectional view of a conventional barrel type vapor phase growth apparatus. The barrel-shaped susceptor 3 on which the semiconductor substrate 5 is attached is placed in the center of the chamber 4 with the rotating shaft 6, and the raw material gas 1
is supplied from the nozzle 2 at the top of the chamber 3, and is heated by a gas phase reaction or a thermal decomposition reaction on the surface of the semiconductor substrate 5, which is heated to a predetermined temperature by a heating means (not shown) such as high frequency induction heating or resistance heating. After the crystal film is formed on the semiconductor substrate 5, it is discharged from the lower exhaust lower part of the chamber 4.
なお、チャンバー４の外側に冷却ジャケット（図示せず
）を設けて原料の消費を抑制する。また、原料ガスを均
一に流すために、サセプタ３は所定の回転数で回転させ
る。Note that a cooling jacket (not shown) is provided outside the chamber 4 to suppress consumption of raw materials. Further, in order to uniformly flow the raw material gas, the susceptor 3 is rotated at a predetermined rotation speed.
（発明が解決しようとする課題）
この種のバレル型サセプタを用いる気相成長装置では、
原料ガス供給ノズルの中心軸とサセプタの回転軸を一致
させることが大変難しい。第３図のように、ノズルの中
心軸とサセプタの回転軸がずれると、原料ガスの片流れ
を発生させ、半導体基板表面における原料カスの供給量
を不均一にし、その結果、半導体基板の装着位置により
結晶成長２！ｉ度を大きく変化させ、結晶膜の特性を不
均一にする。(Problem to be solved by the invention) In a vapor phase growth apparatus using this type of barrel-shaped susceptor,
It is very difficult to align the central axis of the raw material gas supply nozzle with the rotation axis of the susceptor. As shown in Figure 3, if the center axis of the nozzle and the rotation axis of the susceptor are misaligned, a one-sided flow of the raw material gas will occur, making the supply amount of raw material waste uneven on the surface of the semiconductor substrate, and as a result, the mounting position of the semiconductor substrate Crystal growth 2! This greatly changes the i degree and makes the characteristics of the crystal film non-uniform.
従来の装置では、この片流れを防止するために、バレル
型サセプタを回転させているか、必ずしも、十分に均一
な流れを確保することができず、特に最近の超薄膜の成
長においては、半導体基板間の特性の均一化を計るため
に、この片流れ防止をより一層進める必要があった。In conventional equipment, in order to prevent this one-sided flow, the barrel-shaped susceptor is rotated, or it is not always possible to ensure a sufficiently uniform flow.Especially in the recent growth of ultra-thin films, the flow between semiconductor substrates is In order to equalize the characteristics of the steel, it was necessary to further prevent this one-sided flow.
本発明は、原料カスの片流れ防止手段を付設したバレル
型気相成長装置を提供しようとするものである。The present invention aims to provide a barrel-type vapor phase growth apparatus equipped with a means for preventing one-sided flow of raw material waste.
（課題を解決するための手段）
本発明は、半導体基板を装着するバレル型サセプタを垂
直回転軸で支持し、該サセプタをほぼ一定の間隔を空け
て包囲するチャンバーを設け、該チャンバーの頂部に原
料ガスを供給するノズルを接続したバレル型気相成長装
置において、上記チャンバー頂部に原料ガスノズルの外
径より大きな円筒管を接続し、原料カスノズルの下端に
チャンバー内面に沿って摺動可能なカバーを結合し、１
−１肥円筒管の」一端に取り付けたベローで原料カスノ
ズルの後方を密閉支持し、サセプタの回転軸−ヒに原料
カスノズルの中心軸を移動する手段を設けたことを特徴
とする気相成長装置である。(Means for Solving the Problems) The present invention supports a barrel-shaped susceptor on which a semiconductor substrate is attached by a vertical rotating shaft, provides a chamber surrounding the susceptor at a substantially constant interval, and provides a chamber at the top of the chamber. In a barrel-type vapor phase growth apparatus connected to a nozzle for supplying raw material gas, a cylindrical tube larger than the outer diameter of the raw material gas nozzle is connected to the top of the chamber, and a cover that can be slid along the inner surface of the chamber is attached to the lower end of the raw material gas nozzle. Combine, 1
-1 A vapor phase growth apparatus characterized in that the rear of the raw material waste nozzle is hermetically supported by a bellow attached to one end of the cylindrical tube, and a means for moving the center axis of the raw material waste nozzle is provided on the rotation axis of the susceptor. It is.
（作用）
本発明の気相成長装置は、基本的な構成は第２図の従来
装置と同じであるが、本発明の特徴である、サセプタの
回転軸上に原料カスノズルの中心軸を移動する手段につ
いて、第１図により以下説明する。第１図は、気相成長
装置上部の拡大図でアリ、チャンバー４の頂部に原料ガ
スノズル２の外径より大きな円筒管８を接続し、原料カ
スノズルの下端にチャンバ−４内面に沿って摺動可能な
カバー９を結合し、上記円筒管の上端に取り付けたベロ
ー１０で原料ガスノズル２の後方を密閉支持するととも
に、上記円筒管８に調整ネジ１１を設けることにより、
サセプタ３の回転軸上に原料ガスノズル２の中心軸を移
動するようにしたちのである。なお、ノズル２の移動手
段は、第１図の調整ネジ１１に限定されるものでなく、
微調整が可能なものであれば、その種類は問わない。上
記カバー９は、チャンバー４の内面と同一形状を有し、
該内面に沿って摺動して該内面に密着させるもので、ノ
ズル２と円筒管８の空間による原料ガス流の乱れを防止
するものである。(Function) The vapor phase growth apparatus of the present invention has the same basic configuration as the conventional apparatus shown in FIG. 2, but the central axis of the raw material waste nozzle is moved onto the rotation axis of the susceptor, which is a feature of the present invention. The means will be explained below with reference to FIG. Figure 1 is an enlarged view of the upper part of the vapor phase growth apparatus.A cylindrical tube 8 larger than the outer diameter of the raw material gas nozzle 2 is connected to the top of the chamber 4, and is slid along the inner surface of the chamber 4 to the lower end of the raw material gas nozzle. By combining a possible cover 9 and sealingly supporting the rear of the raw material gas nozzle 2 with a bellows 10 attached to the upper end of the cylindrical tube, and providing an adjustment screw 11 on the cylindrical tube 8,
The central axis of the raw material gas nozzle 2 is moved onto the rotation axis of the susceptor 3. Note that the means for moving the nozzle 2 is not limited to the adjustment screw 11 shown in FIG.
The type does not matter as long as it can be finely adjusted. The cover 9 has the same shape as the inner surface of the chamber 4,
It slides along the inner surface and comes into close contact with the inner surface, and prevents disturbance of the raw material gas flow due to the space between the nozzle 2 and the cylindrical tube 8.
（実施例）
第１図の装置を用い、本発明の効果を確認するために、
サセプタの回転を停止した状態で、ＧａＡｓ半導体結晶
を成長させた。(Example) In order to confirm the effects of the present invention using the apparatus shown in FIG.
A GaAs semiconductor crystal was grown while the rotation of the susceptor was stopped.
サセプタには２インチのＧａＡｓウェハを６枚装着し、
ＡｓＨ２を水素で希釈した１０％ガスを毎分１！、トリ
メチルガリウムを毎分５０ｃｃで全体の流量を６０Ｓｔ
、旧こ調整してノズルより供給し、チャンバー内の圧力
を５０Ｔｏｒｒに、基板の温度を６７０°Ｃに保持して
１時間成長させた。Six 2-inch GaAs wafers are mounted on the susceptor.
10% gas of AsH2 diluted with hydrogen at 1 rate per minute! , trimethyl gallium at a rate of 50 cc per minute and a total flow rate of 60 St.
, and was adjusted and supplied from a nozzle, and growth was performed for 1 hour while maintaining the pressure in the chamber at 50 Torr and the temperature of the substrate at 670°C.
成長後のウェハを取り出し、ＧａＡｓの膜厚をステンエ
ッチングで求め、その結果を第５図に示した。The wafer after growth was taken out, and the thickness of the GaAs film was determined by stainless steel etching. The results are shown in FIG.
図から明らかなように、サセプタ位置により膜厚に大き
な違いかあり、原料ガスの片流れの発生がわかる。As is clear from the figure, there is a large difference in film thickness depending on the susceptor position, and it can be seen that one-sided flow of the source gas occurs.
次に、第１図の調整ネジで、サセプタの回転軸上にノズ
ルの中心軸を一致させてから、上記と同様にＧａＡｓ結
晶膜を成長させたところ、第４図のように、膜厚のバラ
ツキは±１５％にまで抑えることができた。Next, after aligning the central axis of the nozzle with the rotation axis of the susceptor using the adjustment screw shown in Figure 1, a GaAs crystal film was grown in the same manner as above, and as shown in Figure 4, the film thickness was The variation could be suppressed to ±15%.
さらに、この条件でサセプタを回転させて成長させたと
ころ、膜厚のバラツキは、再現性良く、１１０％以下に
まで抑えることができた。Furthermore, when the susceptor was rotated to grow the film under these conditions, the variation in film thickness could be suppressed to 110% or less with good reproducibility.
（発明の効果）
本発明は、上記の構成を採用することにより、サセプタ
の回転軸に原料ガスノズルの中心軸を容易に一致させる
ことができ、ウェハ間の結晶膜の均一性を向上させるこ
とを可能にした。特に、均一な特性を有する超薄膜の成
長を容易にした。(Effects of the Invention) By adopting the above configuration, the present invention can easily align the center axis of the raw material gas nozzle with the rotation axis of the susceptor, thereby improving the uniformity of the crystal film between wafers. made possible. In particular, it facilitated the growth of ultra-thin films with uniform properties.
第１図は、本発明の１具体例である、サセプタの回転軸
に原料ガスノズルの中心軸を一致させるためのノズルの
移動手段を説明するための拡大図であり、第２図は従来
のバレル型サセプタを有する気相成長装置の断面図、第
３図は従来の装置の欠点である原料ガスの片流れを説明
するための図、第４図は実施例で得た結晶膜厚のバラツ
キを示した図、第５図はノズルの中心軸を調整しない従
来装置の形態で成長させた結晶の膜厚のバラツキを示し
た図である。
第
図
サセプタとノズルの中、ｂ軸
第２図FIG. 1 is an enlarged view for explaining a nozzle moving means for aligning the central axis of the raw material gas nozzle with the rotating axis of the susceptor, which is a specific example of the present invention, and FIG. 2 is an enlarged view of a conventional barrel. A cross-sectional view of a vapor phase growth apparatus having a mold susceptor, FIG. 3 is a diagram for explaining the one-sided flow of raw material gas, which is a drawback of the conventional apparatus, and FIG. 4 shows variations in crystal film thickness obtained in Examples. FIG. 5 is a diagram showing variations in the film thickness of crystals grown using a conventional apparatus in which the center axis of the nozzle is not adjusted. Diagram Inside the susceptor and nozzle, b-axis Diagram 2
Claims (1)
支持し、該サセプタをほぼ一定の間隔を空けて包囲する
チャンバーを設け、該チャンバーの頂部に原料ガスを供
給するノズルを接続したバレル型気相成長装置において
、上記チャンバー頂部に原料ガスノズルの外径より大き
な円筒管を接続し、原料ガスノズルの下端にチャンバー
内面に沿って摺動可能なカバーを結合し、上記円筒管の
上端に取り付けたベローで原料ガスノズルの後方を密閉
支持し、サセプタの回転軸上に原料ガスノズルの中心軸
を移動する手段を設けたことを特徴とする気相成長装置
。A barrel-type gas phase system in which a barrel-type susceptor on which a semiconductor substrate is mounted is supported by a vertical rotating shaft, a chamber is provided surrounding the susceptor at a substantially constant interval, and a nozzle for supplying raw material gas is connected to the top of the chamber. In the growth apparatus, a cylindrical tube larger than the outer diameter of the raw material gas nozzle is connected to the top of the chamber, a cover that can be slid along the inner surface of the chamber is coupled to the lower end of the raw material gas nozzle, and a bellows attached to the upper end of the cylindrical tube is used. A vapor phase growth apparatus characterized in that the rear of a source gas nozzle is hermetically supported and means is provided for moving the central axis of the source gas nozzle on the rotation axis of a susceptor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24735890A JPH04130085A (en) | 1990-09-19 | 1990-09-19 | Pulse type vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24735890A JPH04130085A (en) | 1990-09-19 | 1990-09-19 | Pulse type vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04130085A true JPH04130085A (en) | 1992-05-01 |
Family
ID=17162234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24735890A Pending JPH04130085A (en) | 1990-09-19 | 1990-09-19 | Pulse type vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04130085A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806496A1 (en) * | 1996-05-10 | 1997-11-12 | MEMC Electronic Materials, Inc. | Method and apparatus for aiming a barrel reactor nozzle |
| WO2018234611A1 (en) * | 2017-06-21 | 2018-12-27 | Picosun Oy | Substrate processing apparatus and method |
-
1990
- 1990-09-19 JP JP24735890A patent/JPH04130085A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806496A1 (en) * | 1996-05-10 | 1997-11-12 | MEMC Electronic Materials, Inc. | Method and apparatus for aiming a barrel reactor nozzle |
| WO2018234611A1 (en) * | 2017-06-21 | 2018-12-27 | Picosun Oy | Substrate processing apparatus and method |
| US11505864B2 (en) | 2017-06-21 | 2022-11-22 | Picosun Oy | Adjustable fluid inlet assembly for a substrate processing apparatus and method |
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