JPS5680176A - Photoelectromotive force device - Google Patents

Photoelectromotive force device

Info

Publication number
JPS5680176A
JPS5680176A JP15724579A JP15724579A JPS5680176A JP S5680176 A JPS5680176 A JP S5680176A JP 15724579 A JP15724579 A JP 15724579A JP 15724579 A JP15724579 A JP 15724579A JP S5680176 A JPS5680176 A JP S5680176A
Authority
JP
Japan
Prior art keywords
layers
gas
amorphous silicon
generating
specific resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15724579A
Other languages
Japanese (ja)
Inventor
Yukinori Kuwano
Terutoyo Imai
Michitoshi Onishi
Hidenori Nishiwaki
Shinya Tsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP15724579A priority Critical patent/JPS5680176A/en
Publication of JPS5680176A publication Critical patent/JPS5680176A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To form generating layers and current collecting means by the same plasma reaction systems and increase the consistency of a manufacturing process by a method wherein the current collecting means formed in amorphous silicon layers functioning as the substantial generating layers are made up by a material of the quality the same as the generating layers. CONSTITUTION:The first electrodes 5 of each generating zone are formed on a substrate 1 according to a selective spatter adhering method, while the substrate 1 is arranged in a plasma reaction pipe, and amorphous silicon layers 4 and low specific resistance amorphous silicon layers 10 are successively formed. Each P, N layer of the amorphous silicon layers 4 is built up by selecting impurity gas contained in a silicon compound atmosphere, and B2H6 gas is used for P type layers 4a and PH3 gas for N type layers 4c. The low specific resistance amorphous silicon layers 10 are similarly formed by introducing impurity gas into the plasma reaction pipe; the low specific resistance layers of 10<-2>OMEGA.cm can be built up by using gas such as PH3 gas.
JP15724579A 1979-12-04 1979-12-04 Photoelectromotive force device Pending JPS5680176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15724579A JPS5680176A (en) 1979-12-04 1979-12-04 Photoelectromotive force device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15724579A JPS5680176A (en) 1979-12-04 1979-12-04 Photoelectromotive force device

Publications (1)

Publication Number Publication Date
JPS5680176A true JPS5680176A (en) 1981-07-01

Family

ID=15645411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15724579A Pending JPS5680176A (en) 1979-12-04 1979-12-04 Photoelectromotive force device

Country Status (1)

Country Link
JP (1) JPS5680176A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999780A (en) * 1982-11-09 1984-06-08 エナージー・コンバーション・デバイセス・インコーポレーテッド Large area photocell and method of producing same
JPS59194480A (en) * 1983-04-18 1984-11-05 Matsushita Electric Ind Co Ltd Manufacture of solar battery
JPH02177374A (en) * 1988-12-27 1990-07-10 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
US7492028B2 (en) 2005-02-18 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999780A (en) * 1982-11-09 1984-06-08 エナージー・コンバーション・デバイセス・インコーポレーテッド Large area photocell and method of producing same
JPH0563952B2 (en) * 1982-11-09 1993-09-13 Energy Conversion Devices Inc
JPS59194480A (en) * 1983-04-18 1984-11-05 Matsushita Electric Ind Co Ltd Manufacture of solar battery
JPS6320027B2 (en) * 1983-04-18 1988-04-26 Matsushita Electric Ind Co Ltd
JPH02177374A (en) * 1988-12-27 1990-07-10 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
US7492028B2 (en) 2005-02-18 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
US7936037B2 (en) 2005-02-18 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device

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