JPS5690572A - Manufacture of solar cell - Google Patents

Manufacture of solar cell

Info

Publication number
JPS5690572A
JPS5690572A JP16737079A JP16737079A JPS5690572A JP S5690572 A JPS5690572 A JP S5690572A JP 16737079 A JP16737079 A JP 16737079A JP 16737079 A JP16737079 A JP 16737079A JP S5690572 A JPS5690572 A JP S5690572A
Authority
JP
Japan
Prior art keywords
gas
solar cell
layers
type
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16737079A
Other languages
Japanese (ja)
Inventor
Masafumi Shinpo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP16737079A priority Critical patent/JPS5690572A/en
Publication of JPS5690572A publication Critical patent/JPS5690572A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To provide a solar cell in a short period of time with a simple step by a method wherein a selective growing process and a gas-liquid-solid growing process are applied and a solvent of impurity metal or a metal containing the impurity metal is applied. CONSTITUTION:On the P type Si base plate 10 is selectively formed N type land area 101A which is opened for example in a stripe-shape against SiO2 3 under CVD growing in H2 atmosphere of SiCl4. Subsequent to this, In acting as solvent for a growth of a gas-liquid-solid phase in next step is vapourized in an oblique direction, and a thin P type layers 102A are selectively formed at one side surface and top surface of each of the land areas. Then, if they are heated in the mixture gas of SiCl4 and H2, Si is selectively melted from the gas phase into the molten In liquid solution, recrystallized on the solid Si to form P layer 103A.... When the P layers 103A are grown up so as to be contacted with the adjoining land layer 101B, each of the diodes is connected in series through In layers 102A.... With this arrangement, the solar cell may easily be produced.
JP16737079A 1979-12-22 1979-12-22 Manufacture of solar cell Pending JPS5690572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16737079A JPS5690572A (en) 1979-12-22 1979-12-22 Manufacture of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16737079A JPS5690572A (en) 1979-12-22 1979-12-22 Manufacture of solar cell

Publications (1)

Publication Number Publication Date
JPS5690572A true JPS5690572A (en) 1981-07-22

Family

ID=15848445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16737079A Pending JPS5690572A (en) 1979-12-22 1979-12-22 Manufacture of solar cell

Country Status (1)

Country Link
JP (1) JPS5690572A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04154175A (en) * 1990-10-17 1992-05-27 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JP2007044767A (en) * 2005-08-05 2007-02-22 Yaskawa Electric Corp Industrial robot

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04154175A (en) * 1990-10-17 1992-05-27 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JP2007044767A (en) * 2005-08-05 2007-02-22 Yaskawa Electric Corp Industrial robot

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