JPS5530847A - Method of gas phase growth for compound semiconductor - Google Patents
Method of gas phase growth for compound semiconductorInfo
- Publication number
- JPS5530847A JPS5530847A JP10394878A JP10394878A JPS5530847A JP S5530847 A JPS5530847 A JP S5530847A JP 10394878 A JP10394878 A JP 10394878A JP 10394878 A JP10394878 A JP 10394878A JP S5530847 A JPS5530847 A JP S5530847A
- Authority
- JP
- Japan
- Prior art keywords
- basic
- gas
- phase growth
- gas phase
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To simultaneoulsly grow uniform compound semiconductor by placing a plurality of cristal basic plate in a lateral growth furnice to form hollow even number multilateral pillar shape in which two side wall surfaces are horizontal and placing upper basic plate differently before and after of lower plate in axial direction of a reactive tube.
CONSTITUTION: In a gas phase growth reactive tube 1, four basic plates 11W14 such as GaAs is arranged to form holoow square pillar shape by holder 15 so that upper and lower basic plates 11, 13 are placed horizontally. On these basic plates GaAs epitaxial layer is simultaneously growed by reaction of Ga and AsCl3 for example. When nitrogen gas is used as carrier gas, upper basic plate 11 is differently placed in upper direction of the gas flow with lower basic plate 13 and when hydrogen gas is used as carrier gas, it is placed adversely so that the difference of gas phase growth speed in the each basic plate is smallized and evenness of thickness of gas phase growth layer is smallized. The arrangement of the basic plates may be regular hexagonal or octgonal.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10394878A JPS5530847A (en) | 1978-08-28 | 1978-08-28 | Method of gas phase growth for compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10394878A JPS5530847A (en) | 1978-08-28 | 1978-08-28 | Method of gas phase growth for compound semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5530847A true JPS5530847A (en) | 1980-03-04 |
JPS5541017B2 JPS5541017B2 (en) | 1980-10-21 |
Family
ID=14367645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10394878A Granted JPS5530847A (en) | 1978-08-28 | 1978-08-28 | Method of gas phase growth for compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5530847A (en) |
-
1978
- 1978-08-28 JP JP10394878A patent/JPS5530847A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5541017B2 (en) | 1980-10-21 |
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