JPS5530847A - Method of gas phase growth for compound semiconductor - Google Patents

Method of gas phase growth for compound semiconductor

Info

Publication number
JPS5530847A
JPS5530847A JP10394878A JP10394878A JPS5530847A JP S5530847 A JPS5530847 A JP S5530847A JP 10394878 A JP10394878 A JP 10394878A JP 10394878 A JP10394878 A JP 10394878A JP S5530847 A JPS5530847 A JP S5530847A
Authority
JP
Japan
Prior art keywords
basic
gas
phase growth
gas phase
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10394878A
Other languages
Japanese (ja)
Other versions
JPS5541017B2 (en
Inventor
Junji Komeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10394878A priority Critical patent/JPS5530847A/en
Publication of JPS5530847A publication Critical patent/JPS5530847A/en
Publication of JPS5541017B2 publication Critical patent/JPS5541017B2/ja
Granted legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To simultaneoulsly grow uniform compound semiconductor by placing a plurality of cristal basic plate in a lateral growth furnice to form hollow even number multilateral pillar shape in which two side wall surfaces are horizontal and placing upper basic plate differently before and after of lower plate in axial direction of a reactive tube.
CONSTITUTION: In a gas phase growth reactive tube 1, four basic plates 11W14 such as GaAs is arranged to form holoow square pillar shape by holder 15 so that upper and lower basic plates 11, 13 are placed horizontally. On these basic plates GaAs epitaxial layer is simultaneously growed by reaction of Ga and AsCl3 for example. When nitrogen gas is used as carrier gas, upper basic plate 11 is differently placed in upper direction of the gas flow with lower basic plate 13 and when hydrogen gas is used as carrier gas, it is placed adversely so that the difference of gas phase growth speed in the each basic plate is smallized and evenness of thickness of gas phase growth layer is smallized. The arrangement of the basic plates may be regular hexagonal or octgonal.
COPYRIGHT: (C)1980,JPO&Japio
JP10394878A 1978-08-28 1978-08-28 Method of gas phase growth for compound semiconductor Granted JPS5530847A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10394878A JPS5530847A (en) 1978-08-28 1978-08-28 Method of gas phase growth for compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10394878A JPS5530847A (en) 1978-08-28 1978-08-28 Method of gas phase growth for compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5530847A true JPS5530847A (en) 1980-03-04
JPS5541017B2 JPS5541017B2 (en) 1980-10-21

Family

ID=14367645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10394878A Granted JPS5530847A (en) 1978-08-28 1978-08-28 Method of gas phase growth for compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5530847A (en)

Also Published As

Publication number Publication date
JPS5541017B2 (en) 1980-10-21

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