JPS6467913A - Method of forming ohmic contact - Google Patents

Method of forming ohmic contact

Info

Publication number
JPS6467913A
JPS6467913A JP22497587A JP22497587A JPS6467913A JP S6467913 A JPS6467913 A JP S6467913A JP 22497587 A JP22497587 A JP 22497587A JP 22497587 A JP22497587 A JP 22497587A JP S6467913 A JPS6467913 A JP S6467913A
Authority
JP
Japan
Prior art keywords
layer
gaas
substrate
molecular beam
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22497587A
Other languages
Japanese (ja)
Inventor
Toshio Kawakami
Kozo Kimura
Futatsu Shirakawa
Shigenori Takagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP22497587A priority Critical patent/JPS6467913A/en
Publication of JPS6467913A publication Critical patent/JPS6467913A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To exclude a heating process for alloying from a series of processes for manufacturing an ohmic electrode and prevent the development of thermal stress as well as distortion at an interface between an electrode and a GaAs crystal by forming a mixed layer of Si-As on a GaAs layer with the process of molecular beam epitaxy when the ohmic electrode is manufactured on the GaAs crystal. CONSTITUTION:An n<+> type GaAs layer 3 is formed on a semiinsulating GaAs substrate 5 and this substrate is put 1 in a molecular beam crystal growth device. The GaAs substrate is heated by a substrate heater. Then respective molecular beams are emitted from a gas source molecular beam-source consisting of Si and As in an ultrahigh vacuum. And their irradiation to the GaAs substrate allows a Si-As layer 1 which is mainly composed of Si and is doped with As to grow on the n<+> type GaAs layer. Further, a Ti-Pt-Au layer 2 is deposited on the Si-As layer 1 by a vacuum vaporization device. In this way, ohmic electrodes consisting of the Si-As layer 1 and the Ti-Pt-Au layer 2 are formed.
JP22497587A 1987-09-08 1987-09-08 Method of forming ohmic contact Pending JPS6467913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22497587A JPS6467913A (en) 1987-09-08 1987-09-08 Method of forming ohmic contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22497587A JPS6467913A (en) 1987-09-08 1987-09-08 Method of forming ohmic contact

Publications (1)

Publication Number Publication Date
JPS6467913A true JPS6467913A (en) 1989-03-14

Family

ID=16822138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22497587A Pending JPS6467913A (en) 1987-09-08 1987-09-08 Method of forming ohmic contact

Country Status (1)

Country Link
JP (1) JPS6467913A (en)

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