JPS6467913A - Method of forming ohmic contact - Google Patents
Method of forming ohmic contactInfo
- Publication number
- JPS6467913A JPS6467913A JP22497587A JP22497587A JPS6467913A JP S6467913 A JPS6467913 A JP S6467913A JP 22497587 A JP22497587 A JP 22497587A JP 22497587 A JP22497587 A JP 22497587A JP S6467913 A JPS6467913 A JP S6467913A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- substrate
- molecular beam
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To exclude a heating process for alloying from a series of processes for manufacturing an ohmic electrode and prevent the development of thermal stress as well as distortion at an interface between an electrode and a GaAs crystal by forming a mixed layer of Si-As on a GaAs layer with the process of molecular beam epitaxy when the ohmic electrode is manufactured on the GaAs crystal. CONSTITUTION:An n<+> type GaAs layer 3 is formed on a semiinsulating GaAs substrate 5 and this substrate is put 1 in a molecular beam crystal growth device. The GaAs substrate is heated by a substrate heater. Then respective molecular beams are emitted from a gas source molecular beam-source consisting of Si and As in an ultrahigh vacuum. And their irradiation to the GaAs substrate allows a Si-As layer 1 which is mainly composed of Si and is doped with As to grow on the n<+> type GaAs layer. Further, a Ti-Pt-Au layer 2 is deposited on the Si-As layer 1 by a vacuum vaporization device. In this way, ohmic electrodes consisting of the Si-As layer 1 and the Ti-Pt-Au layer 2 are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22497587A JPS6467913A (en) | 1987-09-08 | 1987-09-08 | Method of forming ohmic contact |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22497587A JPS6467913A (en) | 1987-09-08 | 1987-09-08 | Method of forming ohmic contact |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6467913A true JPS6467913A (en) | 1989-03-14 |
Family
ID=16822138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22497587A Pending JPS6467913A (en) | 1987-09-08 | 1987-09-08 | Method of forming ohmic contact |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6467913A (en) |
-
1987
- 1987-09-08 JP JP22497587A patent/JPS6467913A/en active Pending
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