JPS57103351A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57103351A JPS57103351A JP17937080A JP17937080A JPS57103351A JP S57103351 A JPS57103351 A JP S57103351A JP 17937080 A JP17937080 A JP 17937080A JP 17937080 A JP17937080 A JP 17937080A JP S57103351 A JPS57103351 A JP S57103351A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- diffused
- substrate
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To form a thermally stable electrode structure by forming a layer containing the same conductive type impurity element on an impurity diffused region of a compound semiconductor substrate mainly including Ga and As as part of electrodes. CONSTITUTION:Amorphous or polycrystalline N<+> type Si layer 2 is, for example, formed at a low temperature by a CVD method, a deposition method on a GaAs substrate 1. A laser beam or electron beam is selectively emitted to the surface of the layer 2 to difuse Si in the heated Si layer 2 and in the substrate 1 from the contacting surface to form an N type Si diffused layer 3. Then, a desired metallic electrode 4 is formed on the layer 2 in an element structure. Thus, an N type diffused layer is formed in the GaAs substrate, and a thermally stable ohmic contact is simultaneously formed on the diffused layer to form an electrically stable GaAs element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17937080A JPS57103351A (en) | 1980-12-18 | 1980-12-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17937080A JPS57103351A (en) | 1980-12-18 | 1980-12-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57103351A true JPS57103351A (en) | 1982-06-26 |
Family
ID=16064659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17937080A Pending JPS57103351A (en) | 1980-12-18 | 1980-12-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57103351A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5961176A (en) * | 1982-09-30 | 1984-04-07 | Anritsu Corp | Ohmic electrode |
-
1980
- 1980-12-18 JP JP17937080A patent/JPS57103351A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5961176A (en) * | 1982-09-30 | 1984-04-07 | Anritsu Corp | Ohmic electrode |
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