JPS5678120A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS5678120A
JPS5678120A JP15533579A JP15533579A JPS5678120A JP S5678120 A JPS5678120 A JP S5678120A JP 15533579 A JP15533579 A JP 15533579A JP 15533579 A JP15533579 A JP 15533579A JP S5678120 A JPS5678120 A JP S5678120A
Authority
JP
Japan
Prior art keywords
mobility
substrate
impurities
compound semiconductor
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15533579A
Other languages
Japanese (ja)
Other versions
JPS613085B2 (en
Inventor
Akihiro Shibatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15533579A priority Critical patent/JPS5678120A/en
Publication of JPS5678120A publication Critical patent/JPS5678120A/en
Publication of JPS613085B2 publication Critical patent/JPS613085B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To make a compound semiconductor substrate having a high resistance to have a low resistance by a method wherein ion implantation is performed after the substrate is heated in a gas atmosphere containing the constituting element. CONSTITUTION:In the semi-insulating compound semiconductor substrate, plural impurities from deep impurity levels, and the activation ratio of an ion implanted impurity by heat treatment is small. Moreover the mobility of the activated carrier is reduced because the mobility is compensated by the impurities having deep levels. Therefore, for example, a GaAs semi-insulating substrate is heated in the atmospher containing As for a prescribed time. At the time shorter than this, impurities having deep levels exist in the active low resistance region to reduce the mobility of carriers, and at the longer time, the resistivity of the interface against the semi-insulating substrate is reduced to generate leak. An adequate partial pressure of As prevents both of the discharge of As from the substrate by heating and the generation of defect. After then by ion implanting S, etc., as usual and performing the prescribed activation by heating, the resistance can be reduced and both of the activation ratio and the mobility can be elevated.
JP15533579A 1979-11-30 1979-11-30 Manufacture of compound semiconductor device Granted JPS5678120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15533579A JPS5678120A (en) 1979-11-30 1979-11-30 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15533579A JPS5678120A (en) 1979-11-30 1979-11-30 Manufacture of compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS5678120A true JPS5678120A (en) 1981-06-26
JPS613085B2 JPS613085B2 (en) 1986-01-30

Family

ID=15603635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15533579A Granted JPS5678120A (en) 1979-11-30 1979-11-30 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5678120A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840818A (en) * 1981-09-03 1983-03-09 Nec Corp Introduction of impurity
JPS61258416A (en) * 1986-05-16 1986-11-15 Hitachi Ltd Manufacture of compound semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840818A (en) * 1981-09-03 1983-03-09 Nec Corp Introduction of impurity
JPS61258416A (en) * 1986-05-16 1986-11-15 Hitachi Ltd Manufacture of compound semiconductor device

Also Published As

Publication number Publication date
JPS613085B2 (en) 1986-01-30

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