JPS55116699A - Production of silicon carbide crystal layer - Google Patents
Production of silicon carbide crystal layerInfo
- Publication number
- JPS55116699A JPS55116699A JP2298479A JP2298479A JPS55116699A JP S55116699 A JPS55116699 A JP S55116699A JP 2298479 A JP2298479 A JP 2298479A JP 2298479 A JP2298479 A JP 2298479A JP S55116699 A JPS55116699 A JP S55116699A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- silicon
- temp
- starting material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a high quality SiC crystal layer with hith reproducibility by forming a SiC layer on one side of a silicon substrate and a carbon starting material layer on the other side; melting the substrate; and holding the temp. of the starting material layer higher than the temp. of the SiC layer to grow the second SiC layer by deposition.
CONSTITUTION: Silicon substrate 2 as ground substrate is placed on sample stand 26 in the known reaction tube, and silicon carbide primary layer 4 and silicon carbide layer 16 are formed on the surface and the side of substrate 2, respectively by a general vapor phase growing method using a carrier gas such as Ar and a silicon starting material such as SiCl4. After a temp. drop the back side of substrate 2 is turned upward, and carbon starting material layer 19 is deposited on the back side by a known method. The temp. is then dropped again, layer 4 is turned upward, and substrate 2 is melted by heating to about 1500°C while feeding hydrogen. Part of silicon melt 12 thus obtd. is penetrated into layer 19, and by maintaining this state for a predetermined time secondary silicon carbide layer 14 is formed. Size control is enabled according to substrate 2, and SiC crystal layers can be mass- produced.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2298479A JPS5812237B2 (en) | 1979-02-27 | 1979-02-27 | Method for manufacturing silicon carbide crystal layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2298479A JPS5812237B2 (en) | 1979-02-27 | 1979-02-27 | Method for manufacturing silicon carbide crystal layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55116699A true JPS55116699A (en) | 1980-09-08 |
JPS5812237B2 JPS5812237B2 (en) | 1983-03-07 |
Family
ID=12097803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2298479A Expired JPS5812237B2 (en) | 1979-02-27 | 1979-02-27 | Method for manufacturing silicon carbide crystal layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5812237B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101039031B1 (en) | 2009-09-25 | 2011-06-07 | 한국지질자원연구원 | Charging Apparatus of Nonoriented Falling Sample for X-Ray Diffractometer |
-
1979
- 1979-02-27 JP JP2298479A patent/JPS5812237B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101039031B1 (en) | 2009-09-25 | 2011-06-07 | 한국지질자원연구원 | Charging Apparatus of Nonoriented Falling Sample for X-Ray Diffractometer |
Also Published As
Publication number | Publication date |
---|---|
JPS5812237B2 (en) | 1983-03-07 |
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