JPS55116699A - Production of silicon carbide crystal layer - Google Patents

Production of silicon carbide crystal layer

Info

Publication number
JPS55116699A
JPS55116699A JP2298479A JP2298479A JPS55116699A JP S55116699 A JPS55116699 A JP S55116699A JP 2298479 A JP2298479 A JP 2298479A JP 2298479 A JP2298479 A JP 2298479A JP S55116699 A JPS55116699 A JP S55116699A
Authority
JP
Japan
Prior art keywords
layer
substrate
silicon
temp
starting material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2298479A
Other languages
Japanese (ja)
Other versions
JPS5812237B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2298479A priority Critical patent/JPS5812237B2/en
Publication of JPS55116699A publication Critical patent/JPS55116699A/en
Publication of JPS5812237B2 publication Critical patent/JPS5812237B2/en
Expired legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a high quality SiC crystal layer with hith reproducibility by forming a SiC layer on one side of a silicon substrate and a carbon starting material layer on the other side; melting the substrate; and holding the temp. of the starting material layer higher than the temp. of the SiC layer to grow the second SiC layer by deposition.
CONSTITUTION: Silicon substrate 2 as ground substrate is placed on sample stand 26 in the known reaction tube, and silicon carbide primary layer 4 and silicon carbide layer 16 are formed on the surface and the side of substrate 2, respectively by a general vapor phase growing method using a carrier gas such as Ar and a silicon starting material such as SiCl4. After a temp. drop the back side of substrate 2 is turned upward, and carbon starting material layer 19 is deposited on the back side by a known method. The temp. is then dropped again, layer 4 is turned upward, and substrate 2 is melted by heating to about 1500°C while feeding hydrogen. Part of silicon melt 12 thus obtd. is penetrated into layer 19, and by maintaining this state for a predetermined time secondary silicon carbide layer 14 is formed. Size control is enabled according to substrate 2, and SiC crystal layers can be mass- produced.
COPYRIGHT: (C)1980,JPO&Japio
JP2298479A 1979-02-27 1979-02-27 Method for manufacturing silicon carbide crystal layer Expired JPS5812237B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2298479A JPS5812237B2 (en) 1979-02-27 1979-02-27 Method for manufacturing silicon carbide crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2298479A JPS5812237B2 (en) 1979-02-27 1979-02-27 Method for manufacturing silicon carbide crystal layer

Publications (2)

Publication Number Publication Date
JPS55116699A true JPS55116699A (en) 1980-09-08
JPS5812237B2 JPS5812237B2 (en) 1983-03-07

Family

ID=12097803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2298479A Expired JPS5812237B2 (en) 1979-02-27 1979-02-27 Method for manufacturing silicon carbide crystal layer

Country Status (1)

Country Link
JP (1) JPS5812237B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101039031B1 (en) 2009-09-25 2011-06-07 한국지질자원연구원 Charging Apparatus of Nonoriented Falling Sample for X-Ray Diffractometer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101039031B1 (en) 2009-09-25 2011-06-07 한국지질자원연구원 Charging Apparatus of Nonoriented Falling Sample for X-Ray Diffractometer

Also Published As

Publication number Publication date
JPS5812237B2 (en) 1983-03-07

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