JPS56134596A - Preparation of silicon carbide crystal - Google Patents

Abstract

PURPOSE: To grow a silicon carbide crystal with a good reproducibility, by depositing a silicon carbide layer on a silicon substrate, depositing a silicon layer on the resultant layer, turning the substrate over, and heating the substrate to grow the second silicon carbide layer on the silicon carbide layer.

CONSTITUTION: A primary silicon carbide layer 4 is formed in a silicon substrate 2 placed on a sample table 26 by the vapor phase growing method, etc. at a temperature of the melting point of the silicon or below, and the temperature is reduced to deposit silicon on the primary tsilicon carbide layer 4 and form a silicon deposition layer 18. The substrate 2 is then turned over to bring the silicon deposition layer 18 into contact with the sample table 26, and then heated to melt the silicon deposition layer 18 and the silicon substrate 2. The secondary single crystal silicon carbide layer 14 is then grown on the primary silicon carbide layer 4. The molten silicon deposition layer 19 improves the uniform heating of the primary silicon carbide layer 4. The temperature is then reduced to take the resultant sample out of the sample table 26, and the solidified silicon melt is removed by etching to give the primary and the secondary silicon carbide layers 4 and 14.

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