JPS55104999A - Production of silicon carbide crystal layer - Google Patents
Production of silicon carbide crystal layerInfo
- Publication number
- JPS55104999A JPS55104999A JP1020079A JP1020079A JPS55104999A JP S55104999 A JPS55104999 A JP S55104999A JP 1020079 A JP1020079 A JP 1020079A JP 1020079 A JP1020079 A JP 1020079A JP S55104999 A JPS55104999 A JP S55104999A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sic
- substrate
- temp
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To produce the title layer with cntrolled SiC crystal form, layer thickness, etc. by melting an Si substrate provided with an SiC layer on a sample stand having an SiC surface layer; holding a temp. gradient; and feeding C and Si starting materials into the atmosphere.
CONSTITUTION: On Si substrate 2 SiC primary layer 4 is formed by vapor phase chemical deposition or other method. Substrate 2 is placed on sample stand 10 having SiC surface layer 6, and by heating stand 10 in an atmosphere contg. C and Si starting materials substrate 2 is melted to form Si melt 12. This state is maintained for a fixed time while holding the temp. of layer 6 higher than that of layer 4, whereby SiC deposition layer 8 is accumulated on the surface of layer 4 from the vapor phase, and SiC secondary layer 14 is deposited on the back side from melt 12. Layers 4, 8 act as reinforcing materials to produce layer 14 having favorable crystal properties with high reproducibility. The size, etc. of the resulting crystal layer can be controlled.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1020079A JPS55104999A (en) | 1979-01-29 | 1979-01-29 | Production of silicon carbide crystal layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1020079A JPS55104999A (en) | 1979-01-29 | 1979-01-29 | Production of silicon carbide crystal layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55104999A true JPS55104999A (en) | 1980-08-11 |
JPS6120514B2 JPS6120514B2 (en) | 1986-05-22 |
Family
ID=11743625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1020079A Granted JPS55104999A (en) | 1979-01-29 | 1979-01-29 | Production of silicon carbide crystal layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55104999A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58162035A (en) * | 1982-03-23 | 1983-09-26 | Hoxan Corp | Preparation of polycrystalline silicon wafer |
JPS59203799A (en) * | 1983-04-28 | 1984-11-17 | Sharp Corp | Preparation of substrate made of silicon carbide single crystal |
JPS60140756A (en) * | 1983-12-27 | 1985-07-25 | Sharp Corp | Manufacture of silicon carbide bipolar transistor |
US5471946A (en) * | 1992-10-13 | 1995-12-05 | Cs Halbleiter-Und Solartechnologie Gmbh | Method for producing a wafer with a monocrystalline silicon carbide layer |
FR2833619A1 (en) * | 2001-12-17 | 2003-06-20 | Commissariat Energie Atomique | Fabrication of crystalline semiconductor substrates involves using a molten layer of a second material for diffusion of atoms into a first material |
JP2010111569A (en) * | 2008-10-08 | 2010-05-20 | Tokai Carbon Co Ltd | Method of manufacturing silicon carbide single crystal and silicon carbide single crystal obtained by the method |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61180111U (en) * | 1985-04-27 | 1986-11-10 | ||
JPS61206614U (en) * | 1985-06-14 | 1986-12-27 |
-
1979
- 1979-01-29 JP JP1020079A patent/JPS55104999A/en active Granted
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58162035A (en) * | 1982-03-23 | 1983-09-26 | Hoxan Corp | Preparation of polycrystalline silicon wafer |
JPH0232784B2 (en) * | 1982-03-23 | 1990-07-23 | Hokusan Kk | |
JPS59203799A (en) * | 1983-04-28 | 1984-11-17 | Sharp Corp | Preparation of substrate made of silicon carbide single crystal |
JPS6346039B2 (en) * | 1983-04-28 | 1988-09-13 | Sharp Kk | |
JPS60140756A (en) * | 1983-12-27 | 1985-07-25 | Sharp Corp | Manufacture of silicon carbide bipolar transistor |
JPH0458691B2 (en) * | 1983-12-27 | 1992-09-18 | Sharp Kk | |
US5471946A (en) * | 1992-10-13 | 1995-12-05 | Cs Halbleiter-Und Solartechnologie Gmbh | Method for producing a wafer with a monocrystalline silicon carbide layer |
FR2833619A1 (en) * | 2001-12-17 | 2003-06-20 | Commissariat Energie Atomique | Fabrication of crystalline semiconductor substrates involves using a molten layer of a second material for diffusion of atoms into a first material |
WO2003052176A3 (en) * | 2001-12-17 | 2004-02-12 | Commissariat Energie Atomique | Method for making crystalline semiconductor substrates |
JP2010111569A (en) * | 2008-10-08 | 2010-05-20 | Tokai Carbon Co Ltd | Method of manufacturing silicon carbide single crystal and silicon carbide single crystal obtained by the method |
Also Published As
Publication number | Publication date |
---|---|
JPS6120514B2 (en) | 1986-05-22 |
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