JPS55104999A - Production of silicon carbide crystal layer - Google Patents

Production of silicon carbide crystal layer

Info

Publication number
JPS55104999A
JPS55104999A JP1020079A JP1020079A JPS55104999A JP S55104999 A JPS55104999 A JP S55104999A JP 1020079 A JP1020079 A JP 1020079A JP 1020079 A JP1020079 A JP 1020079A JP S55104999 A JPS55104999 A JP S55104999A
Authority
JP
Japan
Prior art keywords
layer
sic
substrate
temp
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1020079A
Other languages
Japanese (ja)
Other versions
JPS6120514B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1020079A priority Critical patent/JPS55104999A/en
Publication of JPS55104999A publication Critical patent/JPS55104999A/en
Publication of JPS6120514B2 publication Critical patent/JPS6120514B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To produce the title layer with cntrolled SiC crystal form, layer thickness, etc. by melting an Si substrate provided with an SiC layer on a sample stand having an SiC surface layer; holding a temp. gradient; and feeding C and Si starting materials into the atmosphere.
CONSTITUTION: On Si substrate 2 SiC primary layer 4 is formed by vapor phase chemical deposition or other method. Substrate 2 is placed on sample stand 10 having SiC surface layer 6, and by heating stand 10 in an atmosphere contg. C and Si starting materials substrate 2 is melted to form Si melt 12. This state is maintained for a fixed time while holding the temp. of layer 6 higher than that of layer 4, whereby SiC deposition layer 8 is accumulated on the surface of layer 4 from the vapor phase, and SiC secondary layer 14 is deposited on the back side from melt 12. Layers 4, 8 act as reinforcing materials to produce layer 14 having favorable crystal properties with high reproducibility. The size, etc. of the resulting crystal layer can be controlled.
COPYRIGHT: (C)1980,JPO&Japio
JP1020079A 1979-01-29 1979-01-29 Production of silicon carbide crystal layer Granted JPS55104999A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1020079A JPS55104999A (en) 1979-01-29 1979-01-29 Production of silicon carbide crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1020079A JPS55104999A (en) 1979-01-29 1979-01-29 Production of silicon carbide crystal layer

Publications (2)

Publication Number Publication Date
JPS55104999A true JPS55104999A (en) 1980-08-11
JPS6120514B2 JPS6120514B2 (en) 1986-05-22

Family

ID=11743625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1020079A Granted JPS55104999A (en) 1979-01-29 1979-01-29 Production of silicon carbide crystal layer

Country Status (1)

Country Link
JP (1) JPS55104999A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162035A (en) * 1982-03-23 1983-09-26 Hoxan Corp Preparation of polycrystalline silicon wafer
JPS59203799A (en) * 1983-04-28 1984-11-17 Sharp Corp Preparation of substrate made of silicon carbide single crystal
JPS60140756A (en) * 1983-12-27 1985-07-25 Sharp Corp Manufacture of silicon carbide bipolar transistor
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer
FR2833619A1 (en) * 2001-12-17 2003-06-20 Commissariat Energie Atomique Fabrication of crystalline semiconductor substrates involves using a molten layer of a second material for diffusion of atoms into a first material
JP2010111569A (en) * 2008-10-08 2010-05-20 Tokai Carbon Co Ltd Method of manufacturing silicon carbide single crystal and silicon carbide single crystal obtained by the method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180111U (en) * 1985-04-27 1986-11-10
JPS61206614U (en) * 1985-06-14 1986-12-27

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162035A (en) * 1982-03-23 1983-09-26 Hoxan Corp Preparation of polycrystalline silicon wafer
JPH0232784B2 (en) * 1982-03-23 1990-07-23 Hokusan Kk
JPS59203799A (en) * 1983-04-28 1984-11-17 Sharp Corp Preparation of substrate made of silicon carbide single crystal
JPS6346039B2 (en) * 1983-04-28 1988-09-13 Sharp Kk
JPS60140756A (en) * 1983-12-27 1985-07-25 Sharp Corp Manufacture of silicon carbide bipolar transistor
JPH0458691B2 (en) * 1983-12-27 1992-09-18 Sharp Kk
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer
FR2833619A1 (en) * 2001-12-17 2003-06-20 Commissariat Energie Atomique Fabrication of crystalline semiconductor substrates involves using a molten layer of a second material for diffusion of atoms into a first material
WO2003052176A3 (en) * 2001-12-17 2004-02-12 Commissariat Energie Atomique Method for making crystalline semiconductor substrates
JP2010111569A (en) * 2008-10-08 2010-05-20 Tokai Carbon Co Ltd Method of manufacturing silicon carbide single crystal and silicon carbide single crystal obtained by the method

Also Published As

Publication number Publication date
JPS6120514B2 (en) 1986-05-22

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