JPS5645896A - Manufacture of silicon carbide crystal - Google Patents
Manufacture of silicon carbide crystalInfo
- Publication number
- JPS5645896A JPS5645896A JP12127879A JP12127879A JPS5645896A JP S5645896 A JPS5645896 A JP S5645896A JP 12127879 A JP12127879 A JP 12127879A JP 12127879 A JP12127879 A JP 12127879A JP S5645896 A JPS5645896 A JP S5645896A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sic
- stand
- layer
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To manufacture the titled crystal useful for manufacturing a semiconductor device by forming a primary layer of polycrystal SiC on an Si substrate, melting the substrate to dissolve part of the SiC layer in the substrate, and depositing and growing an SiC secondary layer.
CONSTITUTION: A surface layer of Si substrate 2 on sample stand 26 is removed by etching with HCl.H2 mixed gas, and the temp. of substrate 2 is set to the m.p. of Si or below, preferably 1,200W1,300°C. SiH2Cl2 and C3H8 as starting material gases are fed together with H2 as carrier gas to form SiC primary layer 4 of polycrystal SiC on substrate 2. The feed of the starting material gases are then stopped, stand 26 is heated to about 1,500°C in an atmosphere of H2 alone to melt substrate 2, and it is maintained at about 1,450W1,650°C to form single crystal SiC secondary layer 14 of a predetermined thickness. The atmosphere gas is changed over to Ar, and H2 absorbed in stand 26 is removed. After dropping the temp. the whole stand is dipped in HF.HNO3 mixed soln. to remove the Si by etching, and layers 4, 14 are detached from the stand.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12127879A JPS5645896A (en) | 1979-09-19 | 1979-09-19 | Manufacture of silicon carbide crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12127879A JPS5645896A (en) | 1979-09-19 | 1979-09-19 | Manufacture of silicon carbide crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5645896A true JPS5645896A (en) | 1981-04-25 |
JPS6121196B2 JPS6121196B2 (en) | 1986-05-26 |
Family
ID=14807288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12127879A Granted JPS5645896A (en) | 1979-09-19 | 1979-09-19 | Manufacture of silicon carbide crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5645896A (en) |
-
1979
- 1979-09-19 JP JP12127879A patent/JPS5645896A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6121196B2 (en) | 1986-05-26 |
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