JPS5645896A - Manufacture of silicon carbide crystal - Google Patents

Manufacture of silicon carbide crystal

Info

Publication number
JPS5645896A
JPS5645896A JP12127879A JP12127879A JPS5645896A JP S5645896 A JPS5645896 A JP S5645896A JP 12127879 A JP12127879 A JP 12127879A JP 12127879 A JP12127879 A JP 12127879A JP S5645896 A JPS5645896 A JP S5645896A
Authority
JP
Japan
Prior art keywords
substrate
sic
stand
layer
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12127879A
Other languages
Japanese (ja)
Other versions
JPS6121196B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12127879A priority Critical patent/JPS5645896A/en
Publication of JPS5645896A publication Critical patent/JPS5645896A/en
Publication of JPS6121196B2 publication Critical patent/JPS6121196B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To manufacture the titled crystal useful for manufacturing a semiconductor device by forming a primary layer of polycrystal SiC on an Si substrate, melting the substrate to dissolve part of the SiC layer in the substrate, and depositing and growing an SiC secondary layer.
CONSTITUTION: A surface layer of Si substrate 2 on sample stand 26 is removed by etching with HCl.H2 mixed gas, and the temp. of substrate 2 is set to the m.p. of Si or below, preferably 1,200W1,300°C. SiH2Cl2 and C3H8 as starting material gases are fed together with H2 as carrier gas to form SiC primary layer 4 of polycrystal SiC on substrate 2. The feed of the starting material gases are then stopped, stand 26 is heated to about 1,500°C in an atmosphere of H2 alone to melt substrate 2, and it is maintained at about 1,450W1,650°C to form single crystal SiC secondary layer 14 of a predetermined thickness. The atmosphere gas is changed over to Ar, and H2 absorbed in stand 26 is removed. After dropping the temp. the whole stand is dipped in HF.HNO3 mixed soln. to remove the Si by etching, and layers 4, 14 are detached from the stand.
COPYRIGHT: (C)1981,JPO&Japio
JP12127879A 1979-09-19 1979-09-19 Manufacture of silicon carbide crystal Granted JPS5645896A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12127879A JPS5645896A (en) 1979-09-19 1979-09-19 Manufacture of silicon carbide crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12127879A JPS5645896A (en) 1979-09-19 1979-09-19 Manufacture of silicon carbide crystal

Publications (2)

Publication Number Publication Date
JPS5645896A true JPS5645896A (en) 1981-04-25
JPS6121196B2 JPS6121196B2 (en) 1986-05-26

Family

ID=14807288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12127879A Granted JPS5645896A (en) 1979-09-19 1979-09-19 Manufacture of silicon carbide crystal

Country Status (1)

Country Link
JP (1) JPS5645896A (en)

Also Published As

Publication number Publication date
JPS6121196B2 (en) 1986-05-26

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