JPS55149194A - Manufacture of silicon carbide substrate - Google Patents

Manufacture of silicon carbide substrate

Info

Publication number
JPS55149194A
JPS55149194A JP5613079A JP5613079A JPS55149194A JP S55149194 A JPS55149194 A JP S55149194A JP 5613079 A JP5613079 A JP 5613079A JP 5613079 A JP5613079 A JP 5613079A JP S55149194 A JPS55149194 A JP S55149194A
Authority
JP
Japan
Prior art keywords
substrate
sic
temp
sheet
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5613079A
Other languages
Japanese (ja)
Other versions
JPS6120517B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5613079A priority Critical patent/JPS55149194A/en
Publication of JPS55149194A publication Critical patent/JPS55149194A/en
Publication of JPS6120517B2 publication Critical patent/JPS6120517B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To manufacture an SiC substrate with high productivity by forming an SiC seed layer on an Si substrate at the m.p. of Si or below and melting the Si substrate while contacting a carbon sheet to the Si substrate surface opposite to the seed layer.
CONSTITUTION: Reaction tube 22 is evacuated 32 and replaced with H2, and a surface layer of Si substrate 2 whose principal face is (111) face on carbon sheet 68 is removed by etching with known HCl-H2 mixed gas. The temp. of substrate 2 is set to the m.p. of Si or below, especially 1,100W1,200°C to grow SiC on substrate 2 by a general vapor phase growing method. Thus, Si-3C type SiC mixed layers 4, 16 or 30μm thickness are formed respectively on the surface and side of substrate 2. Feed of starting material gases is then stopped, an atmosphere of H2 alone is formed, and the temp. of sheet 68 is raised to about 1,500°C to melt substrate 2. After the melting the temp. is set to a fixed temp. of about 1,450W1,650°C, and this state is maintained. As a result, sheet 68 absorbs Si melt, and single crystal SiC secondary layer 14 of 10μm thickness is formed.
COPYRIGHT: (C)1980,JPO&Japio
JP5613079A 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate Granted JPS55149194A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5613079A JPS55149194A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5613079A JPS55149194A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Publications (2)

Publication Number Publication Date
JPS55149194A true JPS55149194A (en) 1980-11-20
JPS6120517B2 JPS6120517B2 (en) 1986-05-22

Family

ID=13018484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5613079A Granted JPS55149194A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Country Status (1)

Country Link
JP (1) JPS55149194A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0673113U (en) * 1993-03-24 1994-10-11 株式会社ララ Makeup prevention cover for golf practice

Also Published As

Publication number Publication date
JPS6120517B2 (en) 1986-05-22

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