JPS55149194A - Manufacture of silicon carbide substrate - Google Patents
Manufacture of silicon carbide substrateInfo
- Publication number
- JPS55149194A JPS55149194A JP5613079A JP5613079A JPS55149194A JP S55149194 A JPS55149194 A JP S55149194A JP 5613079 A JP5613079 A JP 5613079A JP 5613079 A JP5613079 A JP 5613079A JP S55149194 A JPS55149194 A JP S55149194A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sic
- temp
- sheet
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To manufacture an SiC substrate with high productivity by forming an SiC seed layer on an Si substrate at the m.p. of Si or below and melting the Si substrate while contacting a carbon sheet to the Si substrate surface opposite to the seed layer.
CONSTITUTION: Reaction tube 22 is evacuated 32 and replaced with H2, and a surface layer of Si substrate 2 whose principal face is (111) face on carbon sheet 68 is removed by etching with known HCl-H2 mixed gas. The temp. of substrate 2 is set to the m.p. of Si or below, especially 1,100W1,200°C to grow SiC on substrate 2 by a general vapor phase growing method. Thus, Si-3C type SiC mixed layers 4, 16 or 30μm thickness are formed respectively on the surface and side of substrate 2. Feed of starting material gases is then stopped, an atmosphere of H2 alone is formed, and the temp. of sheet 68 is raised to about 1,500°C to melt substrate 2. After the melting the temp. is set to a fixed temp. of about 1,450W1,650°C, and this state is maintained. As a result, sheet 68 absorbs Si melt, and single crystal SiC secondary layer 14 of 10μm thickness is formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5613079A JPS55149194A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5613079A JPS55149194A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55149194A true JPS55149194A (en) | 1980-11-20 |
JPS6120517B2 JPS6120517B2 (en) | 1986-05-22 |
Family
ID=13018484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5613079A Granted JPS55149194A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55149194A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0673113U (en) * | 1993-03-24 | 1994-10-11 | 株式会社ララ | Makeup prevention cover for golf practice |
-
1979
- 1979-05-07 JP JP5613079A patent/JPS55149194A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6120517B2 (en) | 1986-05-22 |
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