JPS57180189A - Manufacture of arsenide gallium epitaxial wafer for gunn diode - Google Patents

Manufacture of arsenide gallium epitaxial wafer for gunn diode

Info

Publication number
JPS57180189A
JPS57180189A JP56064019A JP6401981A JPS57180189A JP S57180189 A JPS57180189 A JP S57180189A JP 56064019 A JP56064019 A JP 56064019A JP 6401981 A JP6401981 A JP 6401981A JP S57180189 A JPS57180189 A JP S57180189A
Authority
JP
Japan
Prior art keywords
layer
density
gunn diode
manufacture
ash3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56064019A
Other languages
Japanese (ja)
Inventor
Tokuji Tanaka
Eiji Murata
Kazumochi Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56064019A priority Critical patent/JPS57180189A/en
Publication of JPS57180189A publication Critical patent/JPS57180189A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)

Abstract

PURPOSE:To lacquer the N<+> low-resistive layer to be used for the ohmic electrode which will be formed discontinuously without deteriorating the characteristics of an N<-> layer by a method wherein an N<-> epitaxial layer of 2X10<14>-2X10<15>/cm<3> in density is provided on an N<++> type GaAs substrate, an N<+> layer is superposed on the above utilizing the thermal resolution of an organic Ga and an AsH3, and their density is brought to an optimum state. CONSTITUTION:H2 is refined 101, a fixed quantity of (CH3)3Ga102 is contained in it and sent to a reaction chamber 109. The AsH3 103 that was diluted with 10% of H2 and H2S 104 that was diluted to the prescribed consistency are supplied directly, a high- frequency heating 110 is performed, and an N<-> epitaxial layer of the prescribed density is deposited on the GaAs 112 on a rest 111. Then, the quantity of flow of each gas is controlled 105-108 properly again, and an N<+> layer 1X10<17>-2X10<17> in density is deposited on an N<-> layer. When an ohmic electrode is provided on the above N<+> layer, the electrode can be formed with excellent reproducibility, and an N<+> layer is generated without changing the density of the N<-> layer in the vicinity of its surface maintaining mass producibility, which is the advantages of a thermal resolution method, enabling to obtain the Gunn diode with the desired oscillation characteristics.
JP56064019A 1981-04-30 1981-04-30 Manufacture of arsenide gallium epitaxial wafer for gunn diode Pending JPS57180189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56064019A JPS57180189A (en) 1981-04-30 1981-04-30 Manufacture of arsenide gallium epitaxial wafer for gunn diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56064019A JPS57180189A (en) 1981-04-30 1981-04-30 Manufacture of arsenide gallium epitaxial wafer for gunn diode

Publications (1)

Publication Number Publication Date
JPS57180189A true JPS57180189A (en) 1982-11-06

Family

ID=13246024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56064019A Pending JPS57180189A (en) 1981-04-30 1981-04-30 Manufacture of arsenide gallium epitaxial wafer for gunn diode

Country Status (1)

Country Link
JP (1) JPS57180189A (en)

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