JPS5734330A - Liquid epitaxial growth device - Google Patents

Abstract

PURPOSE:To control the thickness of a grown layer with good reproducibility, by a method wherein saturated fused solution may be made for growth and temperature deference between the saturated fused solution for growth and a substrate is reduced. CONSTITUTION:Pretreated P type InSb 21 is set up in a growth chamber 22 and Ge, In are put in a reservoir 23 and high purity InSb 33 is set in a piston 31. At that time, a reservoir 29 and a conductive hole 23 are isolated by a stopper 35. Next, Te, In are put in a reservoir 30 and high purity InSb 34 is set in a piston 32. At that time, the reservoir 30 and a conductive hole 24 are isolated by a stopper 36. When saturated solution is made by maintaining the temperature at 280 deg.C, the piston 31 is operated to contact the In fused solution in the reservoir 29 with a substrate 21 in the chamber 22 and is stored in a chamber 26 by passing through a hole 25. The temperature of a boat is de creased to expitaxially form P type InSb on the substrate 21 and a piston 22 is op erated after forming the P type InSb with desired thickness to exhaust the previous In fused solution to a chamber 28 and the previous In fused solution is replaced by saturated In fused solution through the existent of InSb for cooling and an N type InSb epitaxial layer having desired thickness is obtained.