JPS57102012A - Liquid phase epitaxy method - Google Patents

Liquid phase epitaxy method

Info

Publication number
JPS57102012A
JPS57102012A JP17838080A JP17838080A JPS57102012A JP S57102012 A JPS57102012 A JP S57102012A JP 17838080 A JP17838080 A JP 17838080A JP 17838080 A JP17838080 A JP 17838080A JP S57102012 A JPS57102012 A JP S57102012A
Authority
JP
Japan
Prior art keywords
layer
inp
groove
component layer
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17838080A
Other languages
Japanese (ja)
Inventor
Yorimitsu Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17838080A priority Critical patent/JPS57102012A/en
Publication of JPS57102012A publication Critical patent/JPS57102012A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To form a fine groove in an InP layer by a method wherein a four- component layer is formed on the InP layer and removed by melting-back. CONSTITUTION:An n-type buffer InP layer 12 is made grown on an n-type InP substrate 11 and a doped InGaAsP layer 13 is made grown in order to make a groove on the layer 12. Then the composition of the four-component layer 13 is selected in such a manner that its corresponding wave length is, for instance, 1.16mum and the four-component layer 13 is given contact with InP solution. Then Ga and As in the four-component layer 13 are dissolved into the InP solution, so that the four-component layer is melted back. When the whole four-component layer 13 is melted back, the InP solution which contains Ga and As dissolves the InP layer, so that a groove 15 is formed. With above method, a very fine groove can be made by melting-back, so that burying of an activated layer into the groove can be realized with high reproducibility.
JP17838080A 1980-12-17 1980-12-17 Liquid phase epitaxy method Pending JPS57102012A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17838080A JPS57102012A (en) 1980-12-17 1980-12-17 Liquid phase epitaxy method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17838080A JPS57102012A (en) 1980-12-17 1980-12-17 Liquid phase epitaxy method

Publications (1)

Publication Number Publication Date
JPS57102012A true JPS57102012A (en) 1982-06-24

Family

ID=16047472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17838080A Pending JPS57102012A (en) 1980-12-17 1980-12-17 Liquid phase epitaxy method

Country Status (1)

Country Link
JP (1) JPS57102012A (en)

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