JPS5487469A - Diffusing method for impurity to 3-5 compound semiconductor - Google Patents

Diffusing method for impurity to 3-5 compound semiconductor

Info

Publication number
JPS5487469A
JPS5487469A JP15584377A JP15584377A JPS5487469A JP S5487469 A JPS5487469 A JP S5487469A JP 15584377 A JP15584377 A JP 15584377A JP 15584377 A JP15584377 A JP 15584377A JP S5487469 A JPS5487469 A JP S5487469A
Authority
JP
Japan
Prior art keywords
diffusion
layer
source
gaas substrate
ampul
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15584377A
Other languages
Japanese (ja)
Other versions
JPS5917846B2 (en
Inventor
Yoshinari Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15584377A priority Critical patent/JPS5917846B2/en
Publication of JPS5487469A publication Critical patent/JPS5487469A/en
Publication of JPS5917846B2 publication Critical patent/JPS5917846B2/en
Expired legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a diffusion layer which has no stoichiometric defect and excellent reproducibility of diffusion depth and diffusion density, by using a diffusion source with a Zn thin film layer formed on an AlxGa1-xAs layer at the time of diffusing Zn into a GaAs substrate.
CONSTITUTION: On GaAs substrate 11, AlxGa1-xAs layer 12 of approximate 5μm in thickness is liquid-crystal-epitaxy-grown and Zn thin film layer 13 of approximate 1μm in thickness is adhered onto it to obtain a diffusion source. Next, diffusion source 24 generated in this way is placed in diffusion-source accommodation part 22 provided at one terminal of quarz ampul 21, diffusion-processed GaAs substrate 25 is arranged at the center part, and the other terminal 23 is sealed. Next, ampul 21 is put in an electric oven and after the temperature is raised up to 566°C, Zn is diffused into substrate 25. As a result, the surface state after diffusion is excellent, no stoichiometric defect occurs, and its diffusion speed and density can be controlled freely by varying the composition of (x) of the AlxGa1-xAs layer.
COPYRIGHT: (C)1979,JPO&Japio
JP15584377A 1977-12-23 1977-12-23 3↓-5 Method of diffusing impurities into compound semiconductors Expired JPS5917846B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15584377A JPS5917846B2 (en) 1977-12-23 1977-12-23 3↓-5 Method of diffusing impurities into compound semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15584377A JPS5917846B2 (en) 1977-12-23 1977-12-23 3↓-5 Method of diffusing impurities into compound semiconductors

Publications (2)

Publication Number Publication Date
JPS5487469A true JPS5487469A (en) 1979-07-11
JPS5917846B2 JPS5917846B2 (en) 1984-04-24

Family

ID=15614700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15584377A Expired JPS5917846B2 (en) 1977-12-23 1977-12-23 3↓-5 Method of diffusing impurities into compound semiconductors

Country Status (1)

Country Link
JP (1) JPS5917846B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6214708B1 (en) 1998-07-29 2001-04-10 Sumitomo Electric Industries, Ltd. Method and apparatus for diffusing zinc into groups III-V compound semiconductor crystals
JP2005302896A (en) * 2004-04-08 2005-10-27 Sumitomo Electric Ind Ltd Vacuum sealing device, vacuum sealing method and method for diffusing impurity
CN102544238A (en) * 2012-03-06 2012-07-04 英利能源（中国）有限公司 Multi-diffusion manufacturing method for polycrystalline silicon wafer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0447010Y2 (en) * 1986-03-24 1992-11-06

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6214708B1 (en) 1998-07-29 2001-04-10 Sumitomo Electric Industries, Ltd. Method and apparatus for diffusing zinc into groups III-V compound semiconductor crystals
US6516743B2 (en) 1998-07-29 2003-02-11 Sumitomo Electric Industries, Ltd. Method and apparatus diffusing zinc into groups III-V compound semiconductor crystals
JP2005302896A (en) * 2004-04-08 2005-10-27 Sumitomo Electric Ind Ltd Vacuum sealing device, vacuum sealing method and method for diffusing impurity
JP4677732B2 (en) * 2004-04-08 2011-04-27 住友電気工業株式会社 Vacuum sealing apparatus, vacuum sealing method, and impurity diffusion method
CN102544238A (en) * 2012-03-06 2012-07-04 英利能源（中国）有限公司 Multi-diffusion manufacturing method for polycrystalline silicon wafer

Also Published As

Publication number Publication date
JPS5917846B2 (en) 1984-04-24

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