JPS52128057A - Manufacture of arsenide gallium epitaxial thin layer - Google Patents

Manufacture of arsenide gallium epitaxial thin layer

Info

Publication number
JPS52128057A
JPS52128057A JP4572276A JP4572276A JPS52128057A JP S52128057 A JPS52128057 A JP S52128057A JP 4572276 A JP4572276 A JP 4572276A JP 4572276 A JP4572276 A JP 4572276A JP S52128057 A JPS52128057 A JP S52128057A
Authority
JP
Japan
Prior art keywords
thin layer
manufacture
arsenide gallium
epitaxial thin
gallium epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4572276A
Other languages
Japanese (ja)
Other versions
JPS5850409B2 (en
Inventor
Tadatoshi Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4572276A priority Critical patent/JPS5850409B2/en
Publication of JPS52128057A publication Critical patent/JPS52128057A/en
Publication of JPS5850409B2 publication Critical patent/JPS5850409B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To provide arsenide gallium thin film for a varactor diode having electron concentration distribution gradient in good reproductability by a simple control by adapting that the electron concentration of the film layer decreases in a slope toward the interface with a substrate by inplating S ion in an epi thin layer formed on GaAs of the low specific resistance and annealing it.
COPYRIGHT: (C)1977,JPO&Japio
JP4572276A 1976-04-20 1976-04-20 Method for manufacturing gallium arsenide epitaxial thin layer Expired JPS5850409B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4572276A JPS5850409B2 (en) 1976-04-20 1976-04-20 Method for manufacturing gallium arsenide epitaxial thin layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4572276A JPS5850409B2 (en) 1976-04-20 1976-04-20 Method for manufacturing gallium arsenide epitaxial thin layer

Publications (2)

Publication Number Publication Date
JPS52128057A true JPS52128057A (en) 1977-10-27
JPS5850409B2 JPS5850409B2 (en) 1983-11-10

Family

ID=12727224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4572276A Expired JPS5850409B2 (en) 1976-04-20 1976-04-20 Method for manufacturing gallium arsenide epitaxial thin layer

Country Status (1)

Country Link
JP (1) JPS5850409B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668306A (en) * 1984-05-28 1987-05-26 Zaidan Hojin Handotai Kenkyu Shinkokai Method of manufacturing a semiconductor device having unhomogeneous distribution of impurity concentration

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041199A (en) * 1983-08-16 1985-03-04 株式会社東芝 Optical control type semiconductor integrated sensor
US4533209A (en) * 1983-10-24 1985-08-06 Motorola, Inc. Connectorless fiber optic package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668306A (en) * 1984-05-28 1987-05-26 Zaidan Hojin Handotai Kenkyu Shinkokai Method of manufacturing a semiconductor device having unhomogeneous distribution of impurity concentration

Also Published As

Publication number Publication date
JPS5850409B2 (en) 1983-11-10

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