JPS56135979A - Photosensing element - Google Patents

Photosensing element

Info

Publication number
JPS56135979A
JPS56135979A JP4006680A JP4006680A JPS56135979A JP S56135979 A JPS56135979 A JP S56135979A JP 4006680 A JP4006680 A JP 4006680A JP 4006680 A JP4006680 A JP 4006680A JP S56135979 A JPS56135979 A JP S56135979A
Authority
JP
Japan
Prior art keywords
photosensible
pattern etching
insulating film
material layer
sensitive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4006680A
Other languages
Japanese (ja)
Inventor
Toshiyuki Komatsu
Masaki Fukaya
Shunichi Uzawa
Seishiro Yoshioka
Yoshiaki Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP4006680A priority Critical patent/JPS56135979A/en
Priority to US06/246,218 priority patent/US4405915A/en
Priority to DE19813112209 priority patent/DE3112209A1/en
Publication of JPS56135979A publication Critical patent/JPS56135979A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors

Abstract

PURPOSE:To reduce a drak current and improve a resolving-power by a method wherein a photosensible material is separated into each photosensible part, and an insulating film is formed by a pattern etching between the photosensible part and an electrode close or adjacent to the photosensible part. CONSTITUTION:A transparent electrode 202 is formed on a substrate 201 by evaporation and made individually independent by a pattern etching. A light cutting-off film 205 is evaporated on the transparent electrode 202 and etched excluding a light receiving part 204. An amorphous Si layer as a light sensitive material layer 203 is made a thin film by, for example, a glow discharge method to be formed. The light sensitive material layer 203 is formed in island-shape on each transparent electrode 202 by the pattern etching. The insulating film 206 is applied with a spinner coating perforating a through hole 208 by the pattern etching which contacts a common electrode 207 and the light sensitive material layer 205. The common electrode 207 is formed on the insulating film 206.
JP4006680A 1980-03-28 1980-03-28 Photosensing element Pending JPS56135979A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP4006680A JPS56135979A (en) 1980-03-28 1980-03-28 Photosensing element
US06/246,218 US4405915A (en) 1980-03-28 1981-03-23 Photoelectric transducing element
DE19813112209 DE3112209A1 (en) 1980-03-28 1981-03-27 PHOTOELECTRIC CONVERTER ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4006680A JPS56135979A (en) 1980-03-28 1980-03-28 Photosensing element

Publications (1)

Publication Number Publication Date
JPS56135979A true JPS56135979A (en) 1981-10-23

Family

ID=12570547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4006680A Pending JPS56135979A (en) 1980-03-28 1980-03-28 Photosensing element

Country Status (1)

Country Link
JP (1) JPS56135979A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59204267A (en) * 1983-05-06 1984-11-19 Fuji Xerox Co Ltd Thin film reading device
JPS60113975A (en) * 1983-11-25 1985-06-20 Matsushita Electric Ind Co Ltd Thin-film photovoltaic element
US4660277A (en) * 1984-06-22 1987-04-28 Fuji Xerox Co. Ltd. Method for forming large area amorphous semiconductor layer and contact type image sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59204267A (en) * 1983-05-06 1984-11-19 Fuji Xerox Co Ltd Thin film reading device
JPS60113975A (en) * 1983-11-25 1985-06-20 Matsushita Electric Ind Co Ltd Thin-film photovoltaic element
US4660277A (en) * 1984-06-22 1987-04-28 Fuji Xerox Co. Ltd. Method for forming large area amorphous semiconductor layer and contact type image sensor

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