JPS56162887A - Photocoupling type bidirectional high withstand voltage switch - Google Patents
Photocoupling type bidirectional high withstand voltage switchInfo
- Publication number
- JPS56162887A JPS56162887A JP6610580A JP6610580A JPS56162887A JP S56162887 A JPS56162887 A JP S56162887A JP 6610580 A JP6610580 A JP 6610580A JP 6610580 A JP6610580 A JP 6610580A JP S56162887 A JPS56162887 A JP S56162887A
- Authority
- JP
- Japan
- Prior art keywords
- type
- insulating film
- photodiode array
- region
- photocoupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002457 bidirectional effect Effects 0.000 title abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 229910052594 sapphire Inorganic materials 0.000 abstract 2
- 239000010980 sapphire Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
PURPOSE:To improve the frequency responding characteristics of a photocoupling type bidirectional high withstand voltage switch by connecting a resistor parallel to a photodiode array. CONSTITUTION:A P type silicon layer is insularly etched by an epitaxial growth on a sapphire substrate. Then, with a silicon oxidized film as a mask phosphorus is diffused in the source region 3, the drain region 4 of an off-set gate structure IG- FET and the N type region 15 of a photodiode array, and boron is diffused similarly in P type regions 10, 17. A gate insulating film 6 and an insulating film 14 are newly formed in a thickness of approx. 1,300Angstrom , a polycrystalline silicon gate electrode 6 is formed, only a photodiode array is masked with a photoresist, and phosphorus is doped by an ion injection on the off-set gate region of the off-set gate structure IG-FET to form an N type high resistance layer 5. Thereafter, a contacting hole is opened at a predetermined position of the insulating film, aluminum is deposited, and electrodes 7, 8, 11, 12 and a wire 13 are formed. A light emitting diode is eventually bonded to the other main surface of the sapphire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6610580A JPS56162887A (en) | 1980-05-19 | 1980-05-19 | Photocoupling type bidirectional high withstand voltage switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6610580A JPS56162887A (en) | 1980-05-19 | 1980-05-19 | Photocoupling type bidirectional high withstand voltage switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56162887A true JPS56162887A (en) | 1981-12-15 |
Family
ID=13306269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6610580A Pending JPS56162887A (en) | 1980-05-19 | 1980-05-19 | Photocoupling type bidirectional high withstand voltage switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56162887A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59195754U (en) * | 1983-06-13 | 1984-12-26 | 三宅 一明 | Photocoupler |
-
1980
- 1980-05-19 JP JP6610580A patent/JPS56162887A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59195754U (en) * | 1983-06-13 | 1984-12-26 | 三宅 一明 | Photocoupler |
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