JPS5769784A - Manufacture of semiconductor light emitting device - Google Patents
Manufacture of semiconductor light emitting deviceInfo
- Publication number
- JPS5769784A JPS5769784A JP14715280A JP14715280A JPS5769784A JP S5769784 A JPS5769784 A JP S5769784A JP 14715280 A JP14715280 A JP 14715280A JP 14715280 A JP14715280 A JP 14715280A JP S5769784 A JPS5769784 A JP S5769784A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- single crystal
- insulating film
- light emitting
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 4
- 230000008020 evaporation Effects 0.000 abstract 3
- 238000001704 evaporation Methods 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To form a ligh emitting device being protected light emitting junction with an insulating film and being easy to form wiring layers by a method wherein formation of the insulating film having openings and molecular beam evaporation are performed alternately by two times on a single crystal substrate. CONSTITUTION:The SiO2 film 13 having openings is provided on the N type GaP single crystal substrate 11, N type single crystal layers 14 of GaP layers are formed at the opening parts, and high resistance polycrystalline layers 14 are formed on the insulating layer 13 respectively by molecular beam evaporation, then the second SiO2 layer 17 is formed, and after openings are formed again, P type single crystal GaP layers 18 doped with nitrogen are formed at the opening parts by molecular beam evaporation, end edges of light emitting junctions 20 are made as to be protected by the insulating film 17, a high resistance polycrystalline layer 19 is formed on the insulating film 17, and wirings 22 and electrodes 21 are formed finally. Accordingly almost no leak of current is generated at the junction end to enhance life characteristic, and because the surface is nearly flat, formation of wirings is facilitated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14715280A JPS5769784A (en) | 1980-10-20 | 1980-10-20 | Manufacture of semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14715280A JPS5769784A (en) | 1980-10-20 | 1980-10-20 | Manufacture of semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5769784A true JPS5769784A (en) | 1982-04-28 |
Family
ID=15423755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14715280A Pending JPS5769784A (en) | 1980-10-20 | 1980-10-20 | Manufacture of semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5769784A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131526A (en) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1980
- 1980-10-20 JP JP14715280A patent/JPS5769784A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131526A (en) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0464455B2 (en) * | 1984-11-30 | 1992-10-15 | Fujitsu Ltd |
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