JPS55158667A - Silicon transistor - Google Patents

Silicon transistor

Info

Publication number
JPS55158667A
JPS55158667A JP6631779A JP6631779A JPS55158667A JP S55158667 A JPS55158667 A JP S55158667A JP 6631779 A JP6631779 A JP 6631779A JP 6631779 A JP6631779 A JP 6631779A JP S55158667 A JPS55158667 A JP S55158667A
Authority
JP
Japan
Prior art keywords
emitters
layer
base
electrode
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6631779A
Other languages
Japanese (ja)
Inventor
Wataru Tomoshige
Akiyuki Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP6631779A priority Critical patent/JPS55158667A/en
Publication of JPS55158667A publication Critical patent/JPS55158667A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent short circuits among a base and emitters in an electrode common to the emitters by a method wherein a poly-Si layer is formed on the necessary surfaces of the base and the emitters directly or indirectly. CONSTITUTION:N-emitters 3 are made up to a P-base 2 on an N-type collector substrate 1 while using SiO2 4 as a mask. The SiO2 4 is coated with an N-type poly Si layer 5, and emitter ballast resistors 5' are formed. The layer 5 is coated with SiO2 6, windows E1 are opened to the film 6, and an electrode 6 common to the emitters is made up on the base layer 2 in a shape that crosses the poly Si layer 5. Base electrode windows B1 are built up, and an electrode B is formed. According to this constitution, since the electrode E common to the emitters is made up onto the emitter layers through the poly Si layer, portions among the base and the emitters are not short-circuited even when there is a pinhole in the insulating film 4, and reliability is improved. Emitter currents are uniformalized by the ballast resistors, and secondary yield strength in the forward direction is further improved.
JP6631779A 1979-05-29 1979-05-29 Silicon transistor Pending JPS55158667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6631779A JPS55158667A (en) 1979-05-29 1979-05-29 Silicon transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6631779A JPS55158667A (en) 1979-05-29 1979-05-29 Silicon transistor

Publications (1)

Publication Number Publication Date
JPS55158667A true JPS55158667A (en) 1980-12-10

Family

ID=13312324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6631779A Pending JPS55158667A (en) 1979-05-29 1979-05-29 Silicon transistor

Country Status (1)

Country Link
JP (1) JPS55158667A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5757559U (en) * 1980-09-19 1982-04-05
JPS58173252U (en) * 1982-05-12 1983-11-19 三洋電機株式会社 Transistor electrode structure
JPS5923753U (en) * 1982-08-02 1984-02-14 三洋電機株式会社 transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS522384A (en) * 1975-06-24 1977-01-10 Toshiba Corp Semiconductor device
JPS5219082A (en) * 1975-08-05 1977-01-14 Fujitsu Ltd Production method of semiconductor
JPS5333505U (en) * 1976-08-26 1978-03-24
JPS5338992A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS522384A (en) * 1975-06-24 1977-01-10 Toshiba Corp Semiconductor device
JPS5219082A (en) * 1975-08-05 1977-01-14 Fujitsu Ltd Production method of semiconductor
JPS5333505U (en) * 1976-08-26 1978-03-24
JPS5338992A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Manufacture of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5757559U (en) * 1980-09-19 1982-04-05
JPH0132744Y2 (en) * 1980-09-19 1989-10-05
JPS58173252U (en) * 1982-05-12 1983-11-19 三洋電機株式会社 Transistor electrode structure
JPH025532Y2 (en) * 1982-05-12 1990-02-09
JPS5923753U (en) * 1982-08-02 1984-02-14 三洋電機株式会社 transistor
JPH0220832Y2 (en) * 1982-08-02 1990-06-06

Similar Documents

Publication Publication Date Title
JPS55158667A (en) Silicon transistor
JPS55158668A (en) Manufacture of silicon transistor
JPS57155772A (en) Manufacture of semiconductor device
JPS56157043A (en) Manufacture of semiconductor device
JPS5759379A (en) Manufacture of semiconductor device
JPS553686A (en) Preparation of semiconductor device
JPS5756966A (en) Manufacture of semiconductor device
JPS5784173A (en) Manufacture of semicondcutor switch
JPS55158663A (en) Transistor
JPS55132053A (en) Manufacture of semiconductor device
JPS56134762A (en) Manufacturing of bipolar semiconductor device
JPS5712546A (en) Semiconductor device and its manufacture
JPS57136366A (en) Manufacture of semiconductor device
JPS5658258A (en) Semiconductor integrated circuit
JPS5491064A (en) Manufacture of semiconductor device
JPS56104476A (en) Manufacture of semiconductor device
JPS56100469A (en) Manufacture of semiconductor device
JPS577150A (en) Manufacture of semiconductor device
JPS5591866A (en) Manufacture of semiconductor device
JPS57133672A (en) Semiconductor device
JPS54152983A (en) Manufacture of semiconductor device
JPS567447A (en) Manufacture of semiconductor device
JPS54154271A (en) Manufacture of semiconductor device
JPS57198657A (en) Semiconductor device
JPS5693316A (en) Manufacture of semiconductor device