JPS5219082A - Production method of semiconductor - Google Patents
Production method of semiconductorInfo
- Publication number
- JPS5219082A JPS5219082A JP9471775A JP9471775A JPS5219082A JP S5219082 A JPS5219082 A JP S5219082A JP 9471775 A JP9471775 A JP 9471775A JP 9471775 A JP9471775 A JP 9471775A JP S5219082 A JPS5219082 A JP S5219082A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- production method
- extermely
- boron
- reduces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: In order to produce a semiconductor device which reduces the voltage with the direction of easy flow with a extermely simple production process by means of selectively inducing the boron in the base-region.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9471775A JPS5219082A (en) | 1975-08-05 | 1975-08-05 | Production method of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9471775A JPS5219082A (en) | 1975-08-05 | 1975-08-05 | Production method of semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5219082A true JPS5219082A (en) | 1977-01-14 |
JPS5732911B2 JPS5732911B2 (en) | 1982-07-14 |
Family
ID=14117873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9471775A Granted JPS5219082A (en) | 1975-08-05 | 1975-08-05 | Production method of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5219082A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55158667A (en) * | 1979-05-29 | 1980-12-10 | Shindengen Electric Mfg Co Ltd | Silicon transistor |
JPS5685858A (en) * | 1979-12-14 | 1981-07-13 | Fujitsu Ltd | Semiconductor device |
JPH0897226A (en) * | 1994-09-26 | 1996-04-12 | Nec Corp | Pnp transistor, semiconductor integrated circuit, manufacture of semiconductor device, and manufacture of semiconductor integrated circuit |
US5897364A (en) * | 1996-06-24 | 1999-04-27 | Chartered Semiconductor Manufacturing, Ltd. | Method of forming N- and P-channel transistors with shallow junctions |
-
1975
- 1975-08-05 JP JP9471775A patent/JPS5219082A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55158667A (en) * | 1979-05-29 | 1980-12-10 | Shindengen Electric Mfg Co Ltd | Silicon transistor |
JPS5685858A (en) * | 1979-12-14 | 1981-07-13 | Fujitsu Ltd | Semiconductor device |
JPH0897226A (en) * | 1994-09-26 | 1996-04-12 | Nec Corp | Pnp transistor, semiconductor integrated circuit, manufacture of semiconductor device, and manufacture of semiconductor integrated circuit |
US5897364A (en) * | 1996-06-24 | 1999-04-27 | Chartered Semiconductor Manufacturing, Ltd. | Method of forming N- and P-channel transistors with shallow junctions |
Also Published As
Publication number | Publication date |
---|---|
JPS5732911B2 (en) | 1982-07-14 |
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