JPS5219082A - Production method of semiconductor - Google Patents

Production method of semiconductor

Info

Publication number
JPS5219082A
JPS5219082A JP9471775A JP9471775A JPS5219082A JP S5219082 A JPS5219082 A JP S5219082A JP 9471775 A JP9471775 A JP 9471775A JP 9471775 A JP9471775 A JP 9471775A JP S5219082 A JPS5219082 A JP S5219082A
Authority
JP
Japan
Prior art keywords
semiconductor
production method
extermely
boron
reduces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9471775A
Other languages
Japanese (ja)
Other versions
JPS5732911B2 (en
Inventor
Yunosuke Kawabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9471775A priority Critical patent/JPS5219082A/en
Publication of JPS5219082A publication Critical patent/JPS5219082A/en
Publication of JPS5732911B2 publication Critical patent/JPS5732911B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: In order to produce a semiconductor device which reduces the voltage with the direction of easy flow with a extermely simple production process by means of selectively inducing the boron in the base-region.
COPYRIGHT: (C)1977,JPO&Japio
JP9471775A 1975-08-05 1975-08-05 Production method of semiconductor Granted JPS5219082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9471775A JPS5219082A (en) 1975-08-05 1975-08-05 Production method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9471775A JPS5219082A (en) 1975-08-05 1975-08-05 Production method of semiconductor

Publications (2)

Publication Number Publication Date
JPS5219082A true JPS5219082A (en) 1977-01-14
JPS5732911B2 JPS5732911B2 (en) 1982-07-14

Family

ID=14117873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9471775A Granted JPS5219082A (en) 1975-08-05 1975-08-05 Production method of semiconductor

Country Status (1)

Country Link
JP (1) JPS5219082A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158667A (en) * 1979-05-29 1980-12-10 Shindengen Electric Mfg Co Ltd Silicon transistor
JPS5685858A (en) * 1979-12-14 1981-07-13 Fujitsu Ltd Semiconductor device
JPH0897226A (en) * 1994-09-26 1996-04-12 Nec Corp Pnp transistor, semiconductor integrated circuit, manufacture of semiconductor device, and manufacture of semiconductor integrated circuit
US5897364A (en) * 1996-06-24 1999-04-27 Chartered Semiconductor Manufacturing, Ltd. Method of forming N- and P-channel transistors with shallow junctions

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158667A (en) * 1979-05-29 1980-12-10 Shindengen Electric Mfg Co Ltd Silicon transistor
JPS5685858A (en) * 1979-12-14 1981-07-13 Fujitsu Ltd Semiconductor device
JPH0897226A (en) * 1994-09-26 1996-04-12 Nec Corp Pnp transistor, semiconductor integrated circuit, manufacture of semiconductor device, and manufacture of semiconductor integrated circuit
US5897364A (en) * 1996-06-24 1999-04-27 Chartered Semiconductor Manufacturing, Ltd. Method of forming N- and P-channel transistors with shallow junctions

Also Published As

Publication number Publication date
JPS5732911B2 (en) 1982-07-14

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