JPS6413781A - Superconducting element - Google Patents

Superconducting element

Info

Publication number
JPS6413781A
JPS6413781A JP62170197A JP17019787A JPS6413781A JP S6413781 A JPS6413781 A JP S6413781A JP 62170197 A JP62170197 A JP 62170197A JP 17019787 A JP17019787 A JP 17019787A JP S6413781 A JPS6413781 A JP S6413781A
Authority
JP
Japan
Prior art keywords
layer
buried channel
substrate
superconducting
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62170197A
Other languages
Japanese (ja)
Inventor
Akira Chokai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62170197A priority Critical patent/JPS6413781A/en
Publication of JPS6413781A publication Critical patent/JPS6413781A/en
Pending legal-status Critical Current

Links

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To form a superconducting element with three terminals, in which negative resistance characteristics are realized, by forming a buried channel type, in which a buried channel layer is formed to the surface of a semiconductor layer, and shaping a low carrier mobility layer to the surface section of the buried channel layer. CONSTITUTION:An n-type layer 2, in a surface section of which a buried channel is composed, is formed to a p-type Si substrate 1, and an amorphous layer 3 is shaped to the surface of the layer 2 as a low carrier mobility layer. A control electrode 5 is formed to the surface of the substrate through an insulating film 4. A pair of superconducting electrodes 61, 62 are arranged onto the surface of the substrate, holding the control electrode 5. When voltage VG is applied to the control electrode 5 for the superconducting element, main currents ID between the superconducting electrodes 61, 62 change as shown in the graph. Consequently, negative resistance characteristics can be acquired in the relationship of the main currents between the superconducting electrodes 61, 62 and control voltage. Accordingly, a logic circuit can be constituted by a small number of elements.
JP62170197A 1987-07-08 1987-07-08 Superconducting element Pending JPS6413781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62170197A JPS6413781A (en) 1987-07-08 1987-07-08 Superconducting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62170197A JPS6413781A (en) 1987-07-08 1987-07-08 Superconducting element

Publications (1)

Publication Number Publication Date
JPS6413781A true JPS6413781A (en) 1989-01-18

Family

ID=15900470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62170197A Pending JPS6413781A (en) 1987-07-08 1987-07-08 Superconducting element

Country Status (1)

Country Link
JP (1) JPS6413781A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214586A (en) * 1988-07-01 1990-01-18 Hitachi Ltd Superconductive transistor
US5132793A (en) * 1989-03-10 1992-07-21 Hitachi, Ltd. Television receiver compatible with both standard system television signal and high definition television signal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214586A (en) * 1988-07-01 1990-01-18 Hitachi Ltd Superconductive transistor
US5132793A (en) * 1989-03-10 1992-07-21 Hitachi, Ltd. Television receiver compatible with both standard system television signal and high definition television signal

Similar Documents

Publication Publication Date Title
JPS54157092A (en) Semiconductor integrated circuit device
JPS55133574A (en) Insulated gate field effect transistor
JPS57100770A (en) Switching element
EP0137992A3 (en) Lateral bipolar transistor formed in a silicon on insulator (soi) substrate
JPS6413781A (en) Superconducting element
JPS6424467A (en) Field effect transistor
JPS6451658A (en) Semiconductor device
IE792474L (en) Switching device
JPS56112762A (en) Semiconductor device
JPS5621359A (en) Semiconductor device
JPS55157240A (en) Semiconductor device
JPS5552219A (en) Semiconductor wafer
JPS55117270A (en) Junction breakdown type field programmable cell array semiconductor device
JPS5623751A (en) Manufacture of integrated circuit device
JPS5617053A (en) Semiconductor device
JPS57184250A (en) Field-effect type semiconductor circuit element
JPS57197869A (en) Semiconductor device
JPS5780769A (en) Semiconductor device
JPS551179A (en) Complementary mis integrated circuit apparatus
JPS5784174A (en) Manufacture of electrostatic induction type semiconductor device
JPS6437858A (en) Semiconductor integrated circuit
GB1151517A (en) Asymmetrical Triggering Diode
JPS55151365A (en) Insulated gate type transistor and semiconductor integrated circuit
JPS5731173A (en) Semiconductor device
JPS55160455A (en) Manufacture of insulated gate type field effect semiconductor device