JPS6413781A - Superconducting element - Google Patents
Superconducting elementInfo
- Publication number
- JPS6413781A JPS6413781A JP62170197A JP17019787A JPS6413781A JP S6413781 A JPS6413781 A JP S6413781A JP 62170197 A JP62170197 A JP 62170197A JP 17019787 A JP17019787 A JP 17019787A JP S6413781 A JPS6413781 A JP S6413781A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- buried channel
- substrate
- superconducting
- control electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To form a superconducting element with three terminals, in which negative resistance characteristics are realized, by forming a buried channel type, in which a buried channel layer is formed to the surface of a semiconductor layer, and shaping a low carrier mobility layer to the surface section of the buried channel layer. CONSTITUTION:An n-type layer 2, in a surface section of which a buried channel is composed, is formed to a p-type Si substrate 1, and an amorphous layer 3 is shaped to the surface of the layer 2 as a low carrier mobility layer. A control electrode 5 is formed to the surface of the substrate through an insulating film 4. A pair of superconducting electrodes 61, 62 are arranged onto the surface of the substrate, holding the control electrode 5. When voltage VG is applied to the control electrode 5 for the superconducting element, main currents ID between the superconducting electrodes 61, 62 change as shown in the graph. Consequently, negative resistance characteristics can be acquired in the relationship of the main currents between the superconducting electrodes 61, 62 and control voltage. Accordingly, a logic circuit can be constituted by a small number of elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62170197A JPS6413781A (en) | 1987-07-08 | 1987-07-08 | Superconducting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62170197A JPS6413781A (en) | 1987-07-08 | 1987-07-08 | Superconducting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6413781A true JPS6413781A (en) | 1989-01-18 |
Family
ID=15900470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62170197A Pending JPS6413781A (en) | 1987-07-08 | 1987-07-08 | Superconducting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6413781A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0214586A (en) * | 1988-07-01 | 1990-01-18 | Hitachi Ltd | Superconductive transistor |
US5132793A (en) * | 1989-03-10 | 1992-07-21 | Hitachi, Ltd. | Television receiver compatible with both standard system television signal and high definition television signal |
-
1987
- 1987-07-08 JP JP62170197A patent/JPS6413781A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0214586A (en) * | 1988-07-01 | 1990-01-18 | Hitachi Ltd | Superconductive transistor |
US5132793A (en) * | 1989-03-10 | 1992-07-21 | Hitachi, Ltd. | Television receiver compatible with both standard system television signal and high definition television signal |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54157092A (en) | Semiconductor integrated circuit device | |
JPS55133574A (en) | Insulated gate field effect transistor | |
JPS57100770A (en) | Switching element | |
EP0137992A3 (en) | Lateral bipolar transistor formed in a silicon on insulator (soi) substrate | |
JPS6413781A (en) | Superconducting element | |
JPS6424467A (en) | Field effect transistor | |
JPS6451658A (en) | Semiconductor device | |
IE792474L (en) | Switching device | |
JPS56112762A (en) | Semiconductor device | |
JPS5621359A (en) | Semiconductor device | |
JPS55157240A (en) | Semiconductor device | |
JPS5552219A (en) | Semiconductor wafer | |
JPS55117270A (en) | Junction breakdown type field programmable cell array semiconductor device | |
JPS5623751A (en) | Manufacture of integrated circuit device | |
JPS5617053A (en) | Semiconductor device | |
JPS57184250A (en) | Field-effect type semiconductor circuit element | |
JPS57197869A (en) | Semiconductor device | |
JPS5780769A (en) | Semiconductor device | |
JPS551179A (en) | Complementary mis integrated circuit apparatus | |
JPS5784174A (en) | Manufacture of electrostatic induction type semiconductor device | |
JPS6437858A (en) | Semiconductor integrated circuit | |
GB1151517A (en) | Asymmetrical Triggering Diode | |
JPS55151365A (en) | Insulated gate type transistor and semiconductor integrated circuit | |
JPS5731173A (en) | Semiconductor device | |
JPS55160455A (en) | Manufacture of insulated gate type field effect semiconductor device |