JPS6419761A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6419761A JPS6419761A JP62176108A JP17610887A JPS6419761A JP S6419761 A JPS6419761 A JP S6419761A JP 62176108 A JP62176108 A JP 62176108A JP 17610887 A JP17610887 A JP 17610887A JP S6419761 A JPS6419761 A JP S6419761A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- substrate
- transistor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To prevent the characteristics of a transistor from deteriorating due to the response property of an OFF current value to light in a thin film transistor formed using a polycrystalline Si layer as an active layer on a transparent insulating substrate by a method wherein a light-shielding layer is provided on the surface on the side opposite to the surface, whereon the transistor is constituted, of the substrate. CONSTITUTION:An active polycrystalline Si layer 2, a gate insulating film 3 and a gate electrode 4 are laminated in order on the surface of a transparent insulating substrate 1, an interlayer insulating film 5 is provided on these and moreover, a metal wiring 6 is provided to constitute a thin film transistor. A light-shielding layer 7 is provided on the side opposite to the side of the surface of the substrate 1, whereon such a transistor is provided, that is, on the rear of the substrate 1. By forming this layer 7 using poly Si, the layer 7 functions as a light-shielding layer to light from the rear and shows the same photo absorption as that of the active layer. Thereby, the trouble die to the response property of an OFF current value to light is prevented and the OFF current value is kept at a low value and is stabilized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62176108A JPS6419761A (en) | 1987-07-14 | 1987-07-14 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62176108A JPS6419761A (en) | 1987-07-14 | 1987-07-14 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6419761A true JPS6419761A (en) | 1989-01-23 |
Family
ID=16007830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62176108A Pending JPS6419761A (en) | 1987-07-14 | 1987-07-14 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6419761A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6335540B1 (en) | 1993-06-24 | 2002-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for fabricating the same |
| US6340830B1 (en) | 1992-06-09 | 2002-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6835586B2 (en) | 1998-12-25 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US6914302B2 (en) | 1998-12-18 | 2005-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2007300141A (en) * | 2007-08-08 | 2007-11-15 | Semiconductor Energy Lab Co Ltd | Image sensor |
| US8158980B2 (en) | 2001-04-19 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor |
-
1987
- 1987-07-14 JP JP62176108A patent/JPS6419761A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6340830B1 (en) | 1992-06-09 | 2002-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6528852B2 (en) | 1992-06-09 | 2003-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Double gated electronic device and method of forming the same |
| US6815772B2 (en) | 1992-06-09 | 2004-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Dual gate MOSFET |
| US6335540B1 (en) | 1993-06-24 | 2002-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for fabricating the same |
| US6573589B2 (en) | 1993-06-24 | 2003-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for fabricating the same |
| US6914302B2 (en) | 1998-12-18 | 2005-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US6835586B2 (en) | 1998-12-25 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8643015B2 (en) | 1998-12-28 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor |
| US8158980B2 (en) | 2001-04-19 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor |
| JP2007300141A (en) * | 2007-08-08 | 2007-11-15 | Semiconductor Energy Lab Co Ltd | Image sensor |
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