JPS6415981A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS6415981A
JPS6415981A JP62172690A JP17269087A JPS6415981A JP S6415981 A JPS6415981 A JP S6415981A JP 62172690 A JP62172690 A JP 62172690A JP 17269087 A JP17269087 A JP 17269087A JP S6415981 A JPS6415981 A JP S6415981A
Authority
JP
Japan
Prior art keywords
layer
poly
transistor
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62172690A
Other languages
Japanese (ja)
Inventor
Koji Mori
Hirobumi Watanabe
Shuya Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Original Assignee
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Research Institute of General Electronics Co Ltd, Ricoh Co Ltd filed Critical Ricoh Research Institute of General Electronics Co Ltd
Priority to JP62172690A priority Critical patent/JPS6415981A/en
Publication of JPS6415981A publication Critical patent/JPS6415981A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To obtain a thin film transistor (TFT) wherein the high density integration is possible and the cost is low by the effect of small-sized device, by forming at least two or more transistors on the same poly-Si layer. CONSTITUTION:On a quartz substrate 1, is arranged a poly-Si layer 2 turning to an active layer. Thereon, a transistor is formed. That is, on the poly-Si layer, a gate SiO2 film 3 is formed, and thereon two gate electrodes 4 are arranged, which are covered with an interlayer insulating film 5. Contact holes are made in a part of the interlayer insulating film 5, on which a common metal wiring 6 is formed. This constitution is applicable not only to a CMOS but also to the case where two or more active devices such as transistor and diode, and passive devices are formed on the same poly-Si layer.
JP62172690A 1987-07-09 1987-07-09 Thin film transistor Pending JPS6415981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62172690A JPS6415981A (en) 1987-07-09 1987-07-09 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62172690A JPS6415981A (en) 1987-07-09 1987-07-09 Thin film transistor

Publications (1)

Publication Number Publication Date
JPS6415981A true JPS6415981A (en) 1989-01-19

Family

ID=15946550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62172690A Pending JPS6415981A (en) 1987-07-09 1987-07-09 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS6415981A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882048A (en) * 1992-05-29 1999-03-16 Tokai Rubber Industries, Ltd. Hose connecting structure
EP0963875A2 (en) 1998-06-11 1999-12-15 Asahi Kasei Kogyo Kabushiki Kaisha Roof rail and method for producing the roof rail
US6037617A (en) * 1997-02-03 2000-03-14 Nec Corporation SOI IGFETs having raised integration level
US6318410B1 (en) * 1992-05-29 2001-11-20 Tokai Rubber Industries, Ltd. Connecting structure
JP2002299631A (en) * 2001-03-30 2002-10-11 Fujitsu Ltd Display device and its manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167375A (en) * 1984-12-21 1985-08-30 Hitachi Ltd Semiconductor device
JPS61251166A (en) * 1985-04-30 1986-11-08 Toshiba Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167375A (en) * 1984-12-21 1985-08-30 Hitachi Ltd Semiconductor device
JPS61251166A (en) * 1985-04-30 1986-11-08 Toshiba Corp Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882048A (en) * 1992-05-29 1999-03-16 Tokai Rubber Industries, Ltd. Hose connecting structure
US6318410B1 (en) * 1992-05-29 2001-11-20 Tokai Rubber Industries, Ltd. Connecting structure
US6037617A (en) * 1997-02-03 2000-03-14 Nec Corporation SOI IGFETs having raised integration level
EP0963875A2 (en) 1998-06-11 1999-12-15 Asahi Kasei Kogyo Kabushiki Kaisha Roof rail and method for producing the roof rail
JP2002299631A (en) * 2001-03-30 2002-10-11 Fujitsu Ltd Display device and its manufacturing method

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