JPS61251166A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS61251166A
JPS61251166A JP9285785A JP9285785A JPS61251166A JP S61251166 A JPS61251166 A JP S61251166A JP 9285785 A JP9285785 A JP 9285785A JP 9285785 A JP9285785 A JP 9285785A JP S61251166 A JPS61251166 A JP S61251166A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
region
element
silicon
preventing
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9285785A
Inventor
Kenji Shibata
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind

Abstract

PURPOSE:To prevent a leakage current by forming an n-type impurity implanted layer for preventing the leakage current in the drain region of an n-channel transistor on the side surface of an element region before an element separation region is formed and performing a thermal process at 900 deg.C or below. CONSTITUTION:Oxide and nitride films 42 and 43, respectively, are formed in the element region of a semiconductor (silicon) substrate 41 provided on a sapphire substrate 21. Then, silicon 41 outside the element region is etched and an ion implantation for preventing a field inversion and the one for preventing a leakage current are conducted on the side surfaces of silicon 41 in the element region to form impurity layers 44. Thereafter, an element separation layer 28 is formed and a thermal process after the formation of a gate insulating film 29 is performed at 900 deg.C or below.
JP9285785A 1985-04-30 1985-04-30 Manufacture of semiconductor device Pending JPS61251166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9285785A JPS61251166A (en) 1985-04-30 1985-04-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9285785A JPS61251166A (en) 1985-04-30 1985-04-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS61251166A true true JPS61251166A (en) 1986-11-08

Family

ID=14066098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9285785A Pending JPS61251166A (en) 1985-04-30 1985-04-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS61251166A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6415981A (en) * 1987-07-09 1989-01-19 Ricoh Kk Thin film transistor
JPH0766424A (en) * 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
US5656537A (en) * 1994-11-28 1997-08-12 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having SOI structure
US5905286A (en) * 1994-11-02 1999-05-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6415981A (en) * 1987-07-09 1989-01-19 Ricoh Kk Thin film transistor
JPH0766424A (en) * 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
US6841432B1 (en) 1993-08-20 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US6010924A (en) * 1993-08-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating a thin film transistor
US7585715B2 (en) 1993-08-20 2009-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US7354811B2 (en) 1993-08-20 2008-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US5905286A (en) * 1994-11-02 1999-05-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US6509583B1 (en) 1994-11-02 2003-01-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor device formed on insulating layer and method of manufacturing the same
US6653656B2 (en) 1994-11-02 2003-11-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor device formed on insulating layer and method of manufacturing the same
US7001822B2 (en) 1994-11-02 2006-02-21 Renesas Technology Corp. Semiconductor device formed on insulating layer and method of manufacturing the same
US6144072A (en) * 1994-11-02 2000-11-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device formed on insulating layer and method of manufacturing the same
US5656537A (en) * 1994-11-28 1997-08-12 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having SOI structure

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