JPS6435961A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6435961A JPS6435961A JP62191021A JP19102187A JPS6435961A JP S6435961 A JPS6435961 A JP S6435961A JP 62191021 A JP62191021 A JP 62191021A JP 19102187 A JP19102187 A JP 19102187A JP S6435961 A JPS6435961 A JP S6435961A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- current
- transistor
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 239000010408 film Substances 0.000 abstract 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- OYLRFHLPEAGKJU-UHFFFAOYSA-N phosphane silicic acid Chemical compound P.[Si](O)(O)(O)O OYLRFHLPEAGKJU-UHFFFAOYSA-N 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000005297 pyrex Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Shift Register Type Memory (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To stabilize the operation characteristics of a transistor such as threshold voltage and ON current-off current ratio by providing between the active layer and the insulating substrate an insulating film of a double-layer structure which is composed of a phosphorus-silicate glass film and a SiO2 film. CONSTITUTION:In a thin film transistor (TFT), a PSG film 10 and a SiO2 film 17 are formed in double layers on an insulating substrate 1 of quartz, pyrex or the like. On this insulating film of a double-layer structure, an active layer 5 made of an amorphous silicon thin film or polysilicon thin film is formed, and a gate oxide film 4, a gate electrode 6, a source 2 and a drain 3 are formed. With this, the diffusion of the impurity contained in the insulating substrate 1 is prohibited by the PSG film 10 and the SiO2 film 17, and the probability of the active layer 5 being contaminated by the impurity from the substrate is substantially reduced, whereby the operation characteristics of the transistor such as threshold voltage, ON current and OFF current become stable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62191021A JPS6435961A (en) | 1987-07-30 | 1987-07-30 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62191021A JPS6435961A (en) | 1987-07-30 | 1987-07-30 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6435961A true JPS6435961A (en) | 1989-02-07 |
Family
ID=16267570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62191021A Pending JPS6435961A (en) | 1987-07-30 | 1987-07-30 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6435961A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6429483B1 (en) | 1994-06-09 | 2002-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6461899B1 (en) | 1999-04-30 | 2002-10-08 | Semiconductor Energy Laboratory, Co., Ltd. | Oxynitride laminate “blocking layer” for thin film semiconductor devices |
| US6486495B2 (en) | 1990-07-24 | 2002-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| US6645826B2 (en) | 1998-12-29 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US6979840B1 (en) | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
| US7005671B2 (en) | 2001-10-01 | 2006-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic equipment, and organic polarizing film |
| US7019385B1 (en) | 1996-04-12 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
-
1987
- 1987-07-30 JP JP62191021A patent/JPS6435961A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6486495B2 (en) | 1990-07-24 | 2002-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| US7026200B2 (en) | 1990-07-24 | 2006-04-11 | Semiconductor Energy Laboratory Co. Ltd. | Method for manufacturing a semiconductor device |
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US6979840B1 (en) | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
| US8330165B2 (en) | 1994-06-09 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6429483B1 (en) | 1994-06-09 | 2002-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US7019385B1 (en) | 1996-04-12 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US7838968B2 (en) | 1996-04-12 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US7015505B2 (en) | 1998-12-29 | 2006-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| US6645826B2 (en) | 1998-12-29 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| US7132686B2 (en) | 1998-12-29 | 2006-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| US6940124B2 (en) | 1999-04-30 | 2005-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US6461899B1 (en) | 1999-04-30 | 2002-10-08 | Semiconductor Energy Laboratory, Co., Ltd. | Oxynitride laminate “blocking layer” for thin film semiconductor devices |
| US7005671B2 (en) | 2001-10-01 | 2006-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic equipment, and organic polarizing film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6421967A (en) | Semiconductor device and manufacture thereof | |
| KR930017218A (en) | Thin Film Field Effect Transistors and Manufacturing Method Thereof | |
| JPS5658267A (en) | Insulated gate type field-effect transistor | |
| KR100305665B1 (en) | Metal Insulator Thin Film Polysilicon Semiconductor Transistor Structure | |
| KR900019245A (en) | Thin film transistor and its manufacturing method | |
| JPS56125868A (en) | Thin-film semiconductor device | |
| JPS5688354A (en) | Semiconductor integrated circuit device | |
| JPS6453460A (en) | Mos transistor | |
| JPS6435961A (en) | Thin film transistor | |
| JPS6435959A (en) | Thin film transistor | |
| JPS6453459A (en) | Mos transistor | |
| JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
| JPS57109367A (en) | Semiconductor memory device | |
| JPS644070A (en) | Thin film transistor and manufacture thereof | |
| JPH04181779A (en) | Thin film transistor | |
| US4979006A (en) | Reverse staggered type silicon thin film transistor | |
| JPS5743455A (en) | Complementary type semiconductor device | |
| JPS6425573A (en) | Thin film transistor | |
| JPS567480A (en) | Film transistor | |
| JPS59189676A (en) | Semiconductor device | |
| JPS5526666A (en) | Insulated gate type semiconductor device | |
| JPS6435960A (en) | Thin film transistor | |
| JPS5717174A (en) | Semiconductor device | |
| Mimura et al. | Low-temperature polysilicon TFT with two-layer gate insulator using photo-CVD and APCVD SiO/sub 2 | |
| JPS6435958A (en) | Thin film transistor |