JPS6453459A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS6453459A
JPS6453459A JP20981587A JP20981587A JPS6453459A JP S6453459 A JPS6453459 A JP S6453459A JP 20981587 A JP20981587 A JP 20981587A JP 20981587 A JP20981587 A JP 20981587A JP S6453459 A JPS6453459 A JP S6453459A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
insulating layer
gate insulating
gate electrode
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20981587A
Other versions
JP2737780B2 (en
Inventor
Hisao Hayashi
Michio Negishi
Takashi Noguchi
Takefumi Oshima
Yuji Hayashi
Toshiichi Maekawa
Takeshi Matsushita
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62209815A priority Critical patent/JP2737780B2/en
Publication of JPS6453459A publication Critical patent/JPS6453459A/en
Application granted granted Critical
Publication of JP2737780B2 publication Critical patent/JP2737780B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To increase the mobility so as to make an LSI or the like operational at higher speed by a method wherein a semiconductor layer interposed between a pair of electrodes is made smaller than the prescribed value in thickness. CONSTITUTION:A second gate electrode 3 formed of polycrystalline silicon is built on a quartz substrate 2, and a gate insulating layer 4 of SiO2 is laminated on the exposed faces of the quartz substrate 2 and the second gate electrode 3. An active layer 5 of polycrystalline silicon semiconductor is formed above the second electrode 3 in the gate insulating layer 4 so as to be a super-thin film equal to or smaller than 100nm in thickness. An N<+>type impurity is ion- implanted into both the sides of the active layer 5 for the formation of a source region 5a and a drain region 5b and a first gate electrode 7 of polycrystalline silicon is formed above the active layer 5 through the intermediary of a gate insulating layer 6 of SiO2.
JP62209815A 1987-08-24 1987-08-24 Mos transistor Expired - Lifetime JP2737780B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62209815A JP2737780B2 (en) 1987-08-24 1987-08-24 Mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62209815A JP2737780B2 (en) 1987-08-24 1987-08-24 Mos transistor

Publications (2)

Publication Number Publication Date
JPS6453459A true JPS6453459A (en) 1989-03-01
JP2737780B2 JP2737780B2 (en) 1998-04-08

Family

ID=16579071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62209815A Expired - Lifetime JP2737780B2 (en) 1987-08-24 1987-08-24 Mos transistor

Country Status (1)

Country Link
JP (1) JP2737780B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152571A (en) * 1991-11-27 1993-06-18 Sharp Corp Resistor
US5445454A (en) * 1991-03-23 1995-08-29 Lohmann Gmbh & Co. Kg Tubular bag packaging
US6102571A (en) * 1998-09-30 2000-08-15 Hosokawa Yoko Co., Ltd. Packaging bag
US6340830B1 (en) 1992-06-09 2002-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6471401B1 (en) * 1997-11-13 2002-10-29 Kyodo Shiko Co., Ltd. Laminated film, method for production thereof, bag and package using the laminated film, and method for separation thereof
US6501097B1 (en) 1994-04-29 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6835586B2 (en) 1998-12-25 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6914302B2 (en) 1998-12-18 2005-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740938B2 (en) 2001-04-16 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Transistor provided with first and second gate electrodes with channel region therebetween
US6906344B2 (en) 2001-05-24 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with plural channels and corresponding plural overlapping electrodes
US6952023B2 (en) 2001-07-17 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6639246B2 (en) 2001-07-27 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094773A (en) * 1983-10-27 1985-05-27 Agency Of Ind Science & Technol Field effect transistor
JPS6146067A (en) * 1984-08-10 1986-03-06 Nec Corp Double gate type thin-film transistor and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094773A (en) * 1983-10-27 1985-05-27 Agency Of Ind Science & Technol Field effect transistor
JPS6146067A (en) * 1984-08-10 1986-03-06 Nec Corp Double gate type thin-film transistor and manufacture thereof

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5445454A (en) * 1991-03-23 1995-08-29 Lohmann Gmbh & Co. Kg Tubular bag packaging
JPH05152571A (en) * 1991-11-27 1993-06-18 Sharp Corp Resistor
US6528852B2 (en) 1992-06-09 2003-03-04 Semiconductor Energy Laboratory Co., Ltd. Double gated electronic device and method of forming the same
US6340830B1 (en) 1992-06-09 2002-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6815772B2 (en) 1992-06-09 2004-11-09 Semiconductor Energy Laboratory Co., Ltd. Dual gate MOSFET
US6501097B1 (en) 1994-04-29 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7102164B2 (en) 1994-04-29 2006-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a conductive layer with a light shielding part
US6800873B2 (en) 1994-04-29 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US6984067B2 (en) 1995-10-09 2006-01-10 Kyodo Shiko Co., Ltd. Laminated film, method for production thereof, bag and package using the laminated film, and method for separation thereof
US7364359B2 (en) 1995-10-09 2008-04-29 Kyodo Shiko Co., Ltd. Laminated film, method for production thereof, bag and package using the laminated film, and method for separation thereof
US6471401B1 (en) * 1997-11-13 2002-10-29 Kyodo Shiko Co., Ltd. Laminated film, method for production thereof, bag and package using the laminated film, and method for separation thereof
US6102571A (en) * 1998-09-30 2000-08-15 Hosokawa Yoko Co., Ltd. Packaging bag
US6914302B2 (en) 1998-12-18 2005-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6835586B2 (en) 1998-12-25 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8643015B2 (en) 1998-12-28 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor

Also Published As

Publication number Publication date
JP2737780B2 (en) 1998-04-08

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